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    L88016 Search Results

    L88016 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    L88016
    Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF 33.89KB 2
    SF Impression Pixel

    L88016 Price and Stock

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    Rochester Electronics LLC ISL88016IHTZ-T

    IC SUPERVISOR 1 CHANNEL TSOT23-6
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    DigiKey ISL88016IHTZ-T Bulk 185
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    Rochester Electronics LLC ISL88016IHTZ-TK

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    Renesas Electronics Corporation ISL88016IHTZ-TK

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    Renesas Electronics Corporation ISL88016IHTZ-T7A

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    Intersil Corporation ISL88016IHTZ-T

    Voltage Supervisor/Reset IC, Fixed, 1 Channel, PDSO6
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    Rochester Electronics ISL88016IHTZ-T 2,628 1
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    L88016 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    L88016 PDF

    L88016

    Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    L88016 L88016 PDF

    Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    L88016 PDF

    L88016

    Abstract: LDMOS
    Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    L88016 L88016 LDMOS PDF

    LDMOS

    Contextual Info: POLYFET RF DEVICES LDMOS Lateral Double Diffuse MOS Transistor The Next Generation polyfet rf devices 1 DMOS Technology • Vertical DMOS 9 Lateral DMOS • Bottom Side Drain • Source bond wire reducing gain • Higher Crss • BEO isolation • High Package Cost


    Original
    L88081 L88082 L88013 L88012 L88008 L88007 L88016 L88026 1000Mhz LDMOS PDF