L88016 Search Results
L88016 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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L88016 | Polyfet RF Devices | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | Original | 33.89KB | 2 |
L88016 Price and Stock
Rochester Electronics LLC ISL88016IHTZ-TIC SUPERVISOR 1 CHANNEL TSOT23-6 |
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ISL88016IHTZ-T | Bulk | 185 |
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Rochester Electronics LLC ISL88016IHTZ-TKIC SUPERVISOR 1 CHANNEL TSOT23-6 |
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ISL88016IHTZ-TK | Bulk | 185 |
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Renesas Electronics Corporation ISL88016IHTZ-TKIC SUPERVISOR 1 CHANNEL TSOT23-6 |
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ISL88016IHTZ-TK | Reel |
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Renesas Electronics Corporation ISL88016IHTZ-T7AIC SUPERVISOR 1 CHANNEL TSOT23-6 |
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ISL88016IHTZ-T7A | Reel |
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Intersil Corporation ISL88016IHTZ-TVoltage Supervisor/Reset IC, Fixed, 1 Channel, PDSO6 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ISL88016IHTZ-T | 2,628 | 1 |
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L88016 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. |
Original |
L88016 | |
L88016Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. |
Original |
L88016 L88016 | |
Contextual Info: polyfet rf devices L88016 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. |
Original |
L88016 | |
L88016
Abstract: LDMOS
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Original |
L88016 L88016 LDMOS | |
LDMOSContextual Info: POLYFET RF DEVICES LDMOS Lateral Double Diffuse MOS Transistor The Next Generation polyfet rf devices 1 DMOS Technology • Vertical DMOS 9 Lateral DMOS • Bottom Side Drain • Source bond wire reducing gain • Higher Crss • BEO isolation • High Package Cost |
Original |
L88081 L88082 L88013 L88012 L88008 L88007 L88016 L88026 1000Mhz LDMOS |