L64 DIODE Search Results

BD3 c502 diode

Abstract: bd3 c531 diode LM822M LM822 13c337 STS-043-A quanta TI2216 r3361 quanta computer
Contextual Info: 8 7 6 5 4 3 2 1 Model MODEL REV CHANGE LIST 1A Page First Release PAGE 3:ADD R489,C584,R315,C358 FOR EMI. PAGE 6:ADD R161,C584,R490,C585 FOR EMI. PAGE 7:ADD R424,C527 FOR EMI. PAGE 8:ADD R210,C185,R212,C193,R204,C176,R127,C217 FOR EMI. PAGE 9:ADD L64,L65,R491,C586 FOR EMI.

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

02JX

Abstract: cy7c291 CY7C291A CY7C292A CY7C293A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode
Contextual Info: Y P R E S S SEMICONDUCTOR 4bE » D S SflU b a 'T^fc-13-Z* CYPRESS SEMICONDUCTOR Features • Windowed for «program m ability • CMOS for optimum speed/power • High speed -¡•20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

FCT825BT

Abstract: 74fct825t 74FCT821 CY74FCT825BTSOC CY74FCT823
Contextual Info: CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T 8Ć/9Ć/10ĆBit Bus Interface Registers D Features D Functional Description with clock enable EN and clear (CLR)Ċideal for parity bus interfacing in highĆperformance microprogrammed sysĆ tems. The FCT825T is an 8Ćbit buffered

Contextual Info: CY7C291A CY7C292A/CY7C293A £i SEMICONDUCTOR *& Reprogrammable 2048 x 8 PROM Features • C apable of w ithstanding > 2001V sta tic discharge • Windowed for reprogrammability • CMOS for optimum speed/power Product Characteristics • High speed — 20 ns commercial

l 9113

Contextual Info: CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T V CYPRESS Features 8-/9-/10-Bit Bus Interface Registers • Sink current • Function, pinout and drive compatible with FCT, F, and Am29821/23/25 logic • FCT-C speed at 6.0 ns max. Com’l FCT-B speed at 7.5 ns max. (Com’l)

7C261

Abstract: 7c264 CY7C261-35WC C2617 cerdip z PACKAGE CY7C263-35DMB CY7C261 CY7C263 CY7C264 7C261-45
Contextual Info: 1 CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,

Contextual Info: CY7C291A CY7C292A/CY7C293A *f CYPRESS SEMICONDUCTOR Reprogrammable 2048 x 8 PROM Features • Capable o f withstanding > 2001V static discharge • Windowed for reprogrammability • C M O S for optimum speed/pow er Product Characteristics • High speed — 20 ns commercial

CY7C292A

Abstract: CY7C293A CY7C291A
Contextual Info: CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM D Features D D Windowed for reprogrammability D CMOS for optimum speed/power ic discharge High speed Ċ Ċ Functional Description The CY7C291A, CY7C292A, and CY7C293A are highĆperformance 2KĆ word by 8Ćbit CMOS PROMs. They are

C2613

Abstract: C2614 c2615 C2611 C2617 7C261 7C264 CY7C261 CY7C263 CY7C264
Contextual Info: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263

CERAMIC LEADLESS CHIP CARRIER

Abstract: cerdip z PACKAGE DIODE SMD A6 cy7c291 CY7C293A-30QMB PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC w14 smd transistor CY7C291A CY7C292A CY7C293A
Contextual Info: 1CY 7C29 2A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an

CY74FCT2646CTPC

Abstract: FCT646T
Contextual Info: CY54/74FCT2646T CY54/74FCT2648T 8ĆBit Registered Transceivers D Features D output logic levels Function and pinout compatible with D FCT and F logic D Fully compatible with TTL input and Sink current 12 mA Com'l , Source current 15 mA (Com'l), 12 mA (Mil)

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

7C261

Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
Contextual Info: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power

CY7C263-35jc

Abstract: IKN0803000 7C261 CY7C261-25QMB 7C264 CY7C261 CY7C263 CY7C264
Contextual Info: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,

C2614

Abstract: CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4
Contextual Info: CY7C261 CY7C263/CY7C264 D Features PROMs 20 ns commercial Functional Description 25 ns (military) Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 220 mW when deselected Fast access: 20 ns EPROM technology 100% programĆ

diode U3J

Abstract: Smd diode u3j csi24 CY7C292A-20DC CY7C291A-35DMB
Contextual Info: CY7C291A CY7C292A/CY7C293A P Yi.PX : V«*1 2K X 8 Reprogrammable PROM identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselect­

CYPRESS 7C291A

Abstract: CY7C293AL-35PC cy7c291 CY7C291A-25WMB CY7C291A CY7C292A CY7C293A
Contextual Info: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an

CY74FCT646CTPC

Abstract: CY74FCT646CTQC FCT646T
Contextual Info: CY54/74FCT646T CY54/74FCT648T 8ĆBit Registered Transceivers D Features D Sink current 48 mA Mil Function, pinout and drive compatible Source current with FCT and F logic D The FCT646T and FCT648T consist of a bus transceiver circuit with threeĆstate, DĆtype flipĆflops, and control circuitry arĆ

Contextual Info: CY54/74FCT2646T CYPRESS cy5w f c t 26«t 8-Bit Registered Transceivers Features • Function and pinout compatible with FCT and F logic • FCT-C speed at 5.4 ns max. Com’l FCT-A speed at 6.3 ns max. (Com’l) • Reduced V oh (typically = 3.3V) versions o f equivalent FCT functions

Contextual Info: CY54/74FCT646T CY54/74FCT648T CYPRESS 8-Bit Registered Transceivers • Sink current Features • Function« pinout and drive compatible with FCT and F logic • FCT-C speed at 5.4 ns max. Com’l FCT-A speed at 6.3 ns max« (Com’l) • Reduced Voh (typically = 3.3V)

Contextual Info: CY54/74FCT646T CY54/74FCT648T V CYPRESS 8-Bit Registered Transceivers • Sink current Features • Function, pinout and drive compatible with FCT and F logic Source current logic level. Enable Control G and direction pins are provided to control the transceiver function. In the transceiver

Contextual Info: SCD#QM5323 Source Control Drawing Upscreening/Manufacturing Specification P/N FT7C261-55WMB-CY Title Page . List of Effective Pages .

Contextual Info: CYPRESS Features • Function, pinout and drive compatible with FCT, F, and Am29821/23/25 logic • FCT-C speed at 6.0 ns max. Com’l FCT-B speed at 7.5 ns max. (Com’l) • Reduced Vqh (typically = 3.3V) versions o f equivalent FCT functions • Edge-rate control circuitry for