L6 IC Search Results

Contextual Info: M IC R O N D24A 16 MEG DRAM DIE I DRAM DIE 16 MEG DRAM MT4C4M4B1D24A, MT4LC4M4B1D24A MT4LC2M8B1D24A, MT4LC1M16C3D24A FEATURES DIE OUTLINE Top View • • • • • • Single 5.0V (x4 only) or 3.3V (x4, x8, x l6) pow er supply Industry-standard x4, x8, x l6 timing and functions

transistor mark l6

Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Contextual Info: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value 50 Units

RJ-21 50 pin Telco connector

Abstract: DT60-5024AA-R1 tip ring pots telephone 90 tip 22
Contextual Info: By Delta Electronics, INC. ADSL Central Office POTS Splitter Functional Specification The Product Name : DT60-5024AA-R1 2 0 0 2 /l/l6 1 to 8 By Delta Electronics, INC. Contents: 1.

KX-K

Abstract: KX-K 4.0 MHz
Contextual Info: Tem ic SST502 Series Semiconductors Current Regulator Diodes—Pov min 45 V SST502 SST503 SST504 SST505 SST506 SST507 Product Summary Part Number lypip SST502 SST503 SST504 SST505 SST506 Anode (mA) Marking Part Number Typ If 0.43 0.56 0.75 L2 L3 L4 L5 L6

transistor mark l6

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

L2SC1623QLT1G

Abstract: L2SC1623RLT1G L2SC1623SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel

TA 7698 AP

Abstract: LM3551 LM3478 LM5021 LM2734 LM2736 LM27952 LM3520 AF SOT23-6 cP SOT23-6
Contextual Info: 2006^1 n Ö Ä Ä ttlia ö l6 « 3 l6 = Ä ffii&äfs&S&Ä 1-3 mm 4-5 •ÄÄÄÄflfÄ • m s » ' täw» *m&a* - um * ^ X J & * - iE # « I £ > H l t U S Ä H Ä H m ä 3 f c * l* f i* 3 f c 6-7 «±»a«-iji.8 « i* Ä W « Ä * « • >f i n J } i i C « i S nnn 3 t ^ a

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel

KST1623L7

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: MT4C1670/1 L 64K X 16 DRAM |U |IC =R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process

Contextual Info: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

Contextual Info: 1 MEG x 16 EDO DRAM |U|IC=RON MT4C1M16E5 MT4LC1M16E5 DRAM VrìfAlVl FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%

SL 2128 8 pin

Abstract: resolver arctan SL 2128 AD2S48
Contextual Info: ANALOG DEVICES fAX-ON-DEHAND HOTLINE - Page 12 -. ANALOG W DEVICES LowCost,l6-BitSynchro/ Resolver -to-DigitalConverter AD2S46 FEATURES 1.3 Arc Minute Accuracy 16-81t Resolution Small 28-Pin Ceramic DIP Low Cost The device incorporates a high accuracy differential conditioning

M5M4V4265CTP-6S

Abstract: M5M4V4260CTP-6S
Contextual Info: 4 M -Bit Dynam ic RAM s low voltag e op eration Continued Memory capacity 4M Memory Configuration 2 5 6 K x l6 Typ. Max. access power time digstpeSor Function mode Package Outline Type No. Dm ) (mW} Fast Page Low Voltage (VCC=3.3±0.3V) 60 363 M5M4V4260CTP-6

AO1341

Contextual Info: ANALOGDEVICES fAX-ON-DEHAND HOTLINE W - Page 39 l6-Channel ANALOG DEVICES DataAcquisition System AD1341 I FEATURES 150,000 Channels/Second Throughput Rate Analog Inputs 16 Single-Ended SE or 8 Differential (DE); Expandable to 32 SE or 16 DE Over Voltage Protected

dra2143X

Abstract: sot-23 l6
Contextual Info: DRA2143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143X Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L6

Contextual Info: ED06DRAM TECHNOLOGY, INC. DRAM M T4C 16270 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MARKING SA transistor

Abstract: marking code ER transistor KST1623L6
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current

BSS70

Abstract: BSS70R bss69r BSS69 DSA003680
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40

16C7

Contextual Info: ADVANCE MT4 L C1 M16CX 1 MEG X 16 DRAM ( M IC R O N 1 MEG x 16 DRAM m DRAM 5.0V FAST PAGE MODE (MT4C1M16CX) 3.0/3.3V, FAST PAGE MODE (MT4LC1 M l 6CX) § H FEATURES PIN ASSIGNMENT (Top View) • Industry standard x l6 pinouts, tim ing, functions and packages

Contextual Info: EDcf DRAM TECHNOLOGY, INC. DRAM MT4LC4M16R6 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x l6 pinout, timing, functions and

L6 IC

Abstract: MAX211 500 mh inductor ballast ic l6561d dimming
Contextual Info: Document 270 g tions usin I applica r IR21592 L A D r o e F tifi 561D onal Rec Internati roelectronics L6 ic M T S and Magnetics for IR Dimming Ballast IC These transformers have been specially engineered for International Rectifier’s IRPLDIM2 Digitally Addressable DALI Dimming Ballast reference design.

4C16257

Contextual Info: PRELIMINARY M T4C16256/7/8/9 L 256K X 16 WIDE DRAM ICRON WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 p inouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages