L4 SOT89 Search Results

RO4003

Abstract: rogers LP1500SOT89 293D105X0035B2T LL1005-FH1N8S LL1005-FH27NK LL1005-FH3N3S LL1608-FH27NK 56348 RO-4003
Contextual Info: EB1500SOT89AA LP1500SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.8 dB Noise Figure 19 dBm Output Power 40 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB1500SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz, and it has a representative noise figure

RO4003

Abstract: 293D105X0035B2T LL1005-FH2N2S LL1608-FH27NK LP3000SOT89 ca sma 2064-000-00
Contextual Info: EB3000SOT89AA LP3000SOT89 1.85 GHZ POWER EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 30 dBm Output Power 10 dB Associated Gain 1.8 dB Noise Figure SOT89 Surface Mount Package EB3000SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has a representative output power of

ATF-50189

Abstract: ATF50189 BLM21P
Contextual Info: Agilent ATF-50189 Low Cost High Linearity Buffer/Driver Amplifier in Industry Standard SOT-89 Package Preliminary Application Note 5049 Introduction Agilent Technologies’s ATF50189 is a high linearity, medium power, low noise EpHEMT FET in a low cost surface mount SOT89 package.

ATF-50189

Abstract: BLM21P R 0603
Contextual Info: ATF-50189 Low Cost High Linearity Buffer/Driver Amplifier in Industry Standard SOT-89 Package Application Note 5049 Introduction Demoboard Avago Technologies’ ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high output IP3

RF3315

Abstract: IPC-SM-782
Contextual Info: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features „ „ „ „ 1 2 3 RF OUT „ 4 GND „ 200MHz to 3GHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at 900MHz

C1005C0G1H101JT000F

Abstract: Murata Moca 0402CS-5N6XJL
Contextual Info: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at

Contextual Info: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at

LL1005-FH4N7S

Abstract: 56348 LP750SOT89 RO4003 RO-4003 293D105X0035B2T LL1005-FH2N7S LL1608-FH27NK 2064-0000-00 DSS-044
Contextual Info: EB750SOT89AA LP750SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.65 dB Noise Figure 19 dBm Output Power 35 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB750SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has an representative noise figure of

matching circuit of atf 52189

Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Contextual Info: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high

SMA MARKING 1475

Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

Contextual Info: E-PHEMT AE308 Product Features • • • • • Application SOT89 Type Package 50MHz-1GHz 2.0 dB Noise Figure +18.0 dBm P1dB Single +5V Supply • CATV Amplifier 4 3 2 1 Function Pin No. Input 1 Output Bias 3 Ground 2,4 Description AE308 is used from 50MHz to 1GHz frequencies.

MMIC marking code R

Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

power amplifier circuit diagram with pcb layout

Abstract: AH125-89G AH125 11304-3S rf power amplifier circuit diagram with pcb layout OZ 960 "30 mhz" driver Amplifier 27 Mhz power amplifier as 123 0603
Contextual Info: Application Note AH125 869 – 960 MHz Balanced Amplifier Reference Design Summary AH125 is a high dynamic range driver amplifier in low-cost surface mount package. This application note explains the performance of AH125 amplifier in balanced configuration. The balanced AH125 amplifier provides +19.7 dB gain with +47.7 dBm of OIP3 at 920 MHz.

Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

Contextual Info: E-PHEMT AE308 Product Features • • • • • Application SOT89 Type Package 50MHz-1GHz 2.0 dB Noise Figure +18.0 dBm P1dB Single +5V Supply • CATV Amplifier 4 3 2 1 Function Pin No. Input 1 Output Bias 3 Ground 2,4 Description AE308 is used from 50MHz to 1GHz frequencies.

PowerMOS Transistors

Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)

r0603

Abstract: S0603 RJ11x2 RV1 1M DM9601 DM9801E
Contextual Info: 8 7 Q1 G910/SOT89 VIN +3.3V + C2 47UF/25V/E.C. 2 L1 1 D MDC MDIO +3.3V X X X EECS PW_RST# X X X X X X X X 4.7K x 4 + C3 1UF/25V/E.C. RESET 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DGND X RX_CLK RX_DV COL CRS RXD3 RXD2 RXD1

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

Contextual Info: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such

adj1117

Abstract: marking Y2 transistor
Contextual Info: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such

Contextual Info: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such

MwT-1789

Abstract: 1789
Contextual Info: Application Notes MwT-1789LN DC-4 GHz Packaged FET June 2005 Application Circuits For Low Noise Typical RF Performance bias at Vds=5V, Ids=200mA, Ta=25°C Parameter Units Test Frequency MHz 870-960 1800-2100 2400-2600 3400-3600 dB 18 16 13 10 dBm 43 43 46

L4 SOT89

Abstract: c9 sot89
Contextual Info: MwT-1789LN DC-4 GHz Packaged FET Application Note June 2006 Application Circuits For Low Noise: Typical RF Performance bias at Vds=5V, Ids=200mA, Ta=25°C Parameter Typical Data Units Test Frequency Gain Output IP3 Noise Figure * MHz 870-960 1800-2100 2400-2600

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this