L4 SOT Search Results

transistor mark l6

Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Contextual Info: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value 50 Units

philips 3f3 ferrite

Abstract: AN890 variac used as a battery charger
Contextual Info: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE

philips 3f3 ferrite

Abstract: AN890 transistor KT 816 dz 300 AN-890
Contextual Info: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE

transistor mark l6

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

DIODE marking L4

Abstract: marking l4 sot-23 BAT54 marking L4
Contextual Info: Schottky Barrier Diode BAT54 200 mA SOT-23 1. Anode 2. NC 3. Cathode GENERAL PURPOSE DETEDTION HIGH SPEED SWITCHING LOW REVERSE CURRENT AND FORWARD VLOTAGE MARKING: L4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Reverse Voltage

transistor A 564

Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

KST1623L7

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

SI2304BDS

Contextual Info: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1

MPSA10

Abstract: MPSA10 equivalent transistor
Contextual Info: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L4

Contextual Info: PDF: 2001 Apr 04 Philips Semiconductors Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 A E F1 Q1 R L1 bp1 F D D3 D2 L D3 A B HE SENSOR DIE POSITION centre of reading point D1 * L4 L3 L2 1 2 3 4 5 bp

Si2304BDS

Abstract: Si2304BDS-T1
Contextual Info: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3

Contextual Info: PDF: 2002 Jan 18 Philips Semiconductors Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 A E F1 Q1 R L1 bp1 F D D3 D2 L D3 A B HE SENSOR DIE POSITION centre of reading point D1 * L4 L3 L2 1 2 3 4 5 bp

Contextual Info: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L L1 R L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions

SOT827-1

Abstract: SOT-827 sot827 030729 L227
Contextual Info: PDF: 2003 Jul 29 Philips Semiconductors Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT827-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w M bp e c Q v M e2

SOT637

Abstract: ABP1
Contextual Info: Package outline Philips Semiconductors Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 E A F1 Q1 R L1 bp1 F D D3 1 D2 L D3 (1) A A HE SENSOR DIE POSITION centre of reading point D1 * B L4(1) Q1 L3 A L2 1 2 3 4 5 bp

S3C marking

Contextual Info: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.

Contextual Info: Package outline DBS37P: plastic DIL-bent-SIL power package; 37 leads lead length 6.8 mm SOT725-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 37 e1 Z w M bp e c Q v M e2 m 10 20 mm scale DIMENSIONS (mm are the original dimensions)

DBS37P

Contextual Info: PDF: 2002 Nov 22 Philips Semiconductors Package outline DBS37P: plastic DIL-bent-SIL power package; 37 leads lead length 6.8 mm SOT725-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 37 e1 Z w M bp e c Q v M e2 m 10 20 mm scale

Contextual Info: Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 E A F1 Q1 R L1 bp1 F D D3 1 D2 L D3 (1) A A HE SENSOR DIE POSITION centre of reading point D1 * B L4(1) Q1 L3 A L2 1 2 3 4 5 bp e v A 0.4 c bp2 HE2 E1

Contextual Info: Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT919-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w M bp e c Q v M e2 m 10 20 mm scale DIMENSIONS (mm are the original dimensions)

Contextual Info: Package outline DBSMS27P: plastic dual bent surface mounted SIL power package; 27 leads SOT1154-1 L4 L3 θ2 gauge plane seating plane A3 S R 1 R 2 D y Lp1 θ1 Lp2 aaa S detail X non-concave x d A2 Dh Eh E j 27 L1 1 L2 A1 e1 e Z Q R1 10 Unit mm A A1 A2 max 4.65 0.10 4.65

SOT263

Abstract: SOT-263 sot263-01 TO-220 JEDEC
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263-01 E A A1 P q D1 mounting base D L4 L3 L1 R L L5 m 1 L2 5 e b w M R c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions

L3 Package

Abstract: SOT263 TO-220 JEDEC sot263b
Contextual Info: PDF: 2001 Jan 11 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions