L31 DIODE Search Results

MARKING L31 SMD

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE

SMD L31

Abstract: MARKING L31 SMD SOT-23 marking l31 BAV23S l31 BAV23S marking L31 SOT23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

MARKING L31 SMD

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

SMD L31

Abstract: smd diode marking 9 ba MARKING- L31 BAV23S l31 BAV23S MARKING L31 SMD
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

MARKING L31 SMD

Abstract: BAV23S l31
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

Contextual Info: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Preliminary OD-B1513-L31 Up 155Mbps/Down 155Mbps OLT Transceiver 3R for PON system FEATURES „ Full Compliance with ITU-T G.983.1 (155.52Mb/s upstream and 155.52Mb/s downstream) ClassB for Single Fiber Bi-directional Transmission. „ Applied to OLT(Optical Line Termination) located on central office Side.

Contextual Info: Preliminary OD-B6211-L31 Up 155Mbps/Down 622Mbps OLT Transceiver 3R for PON system FEATURES „ Full Compliance with ITU-T G.983.1 (155.52Mb/s upstream and 622.08Mb/s downstream) ClassB for Single Fiber Bi-directional Transmission. „ Applied to OLT(Optical Line Termination) located on central office Side.

FSV 052

Abstract: b195 1-101S
Contextual Info: E V L31-055 iooa POWER TRANSISTOR MODULE : F e a tu re s • 7 U —A U • hFE*’fSV' K rtM Including Free W heeling Diode High DC Current Gain • itfeUJfi Insulated Type • ff liÉ : A p p lic a t io n s Power Sw itching • AC t-i'S J ffll AC Motor Controls

PBYR1635

Abstract: 56369 PBYR1640 PBYR1645 m3192
Contextual Info: PBYR1635 PBYR1640 PBYR1645 .- <Mno N AMER P H I L I P S / D I S C R E T E 5SE D E3 bbS3=l31 0022=15? SCHOTTKY-BARRIER RECTIFIER DIODES T B ; 7=^0 3 ~ J 7 Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in

L3105

Abstract: JC EB mot b195 transistor
Contextual Info: E V L31-055 iooa / < 7 - hv POWER TRANSISTOR MODULE Features • ' • 7 U —f r 'f U • h F E ^ 'ift t' • = t— K r tj In c lu d in g Free W h e e lin g D iode H ig h DC C u rre n t Gain Insulated Type ’ A p p lic a tio n s P ow er S w itc h in g

HSMS-8205

Abstract: 8205 sot143 code marking l30 HSMS8202 8205 datasheet HSMS-8101 HSMS-8202 HSMS-8207 SCHOTTKY DIODE SOT-143 marking 8205
Contextual Info: Surface Mount Microwave Schottky Mixer Diodes Technical Data HSMS-8101 Single HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package Features • Optimized for use at 10-14␣ GHz • Low Capacitance • Low Conversion Loss Package Lead Code Identification

HSMS-8205

Abstract: sot143 code marking l30 SOT-23 marking l31 code marking L30 hsms-8205 equivalent L30 SOT143 HSMS8205 MARKING- L31 marking 8205 marking code L31
Contextual Info: Surface Mount Microwave Schottky Mixer Diodes Technical Data HSMS-8101 Single HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Features Plastic SOT-23 Package X X • Optimized for use at 10-14 GHz Package Lead Code Identification Top View • Low Capacitance

HSMS-8205

Abstract: MARKING- L31 SOT-23 marking l31 SOT 143 MARKING 2T marking 2r Schottky L30 SOT143
Contextual Info: What HEWLETT* mLliM PA C K A R D Surface Mount Microwave Schottky Mixer Diodes Technical Data Features h s m s -s i o i sin gle HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance • Low Conversion Loss

HSMS-8205

Abstract: sot143 code marking l30 marking 8205 SOT-23 marking l31 HSMS-8101 L31* MARKING SCHOTTKY DIODE SOT-143 L30 SOT143 8205 datasheet Hewlett-Packard OR Agilent
Contextual Info: Surface Mount Microwave Schottky Mixer Diodes Technical Data HSMS-8101 Single HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Features Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance • Low Conversion Loss Package Lead Code Identification

HSMS8202 equivalent

Abstract: HSMS8202 L30 SOT143
Contextual Info: W hßl H E W LE TT 1 JÍÍMPAC KARD Surface Mount Microwave Schottky Mixer Diodes Technical Data Features • Optimized for use at 10 14 GHz • Low Capacitance • Low Conversion Loss • Low RD • Low Cost Surface Mount Plastic Package Description/Appli cations

SOT-23 marking l31

Abstract: HSMS-2850 HSMS-285A HSMS-285X HSMS-2860 HSMS-286X MARKING- L31 L30 SOT143 HSMS2850
Contextual Info: 3 Absolute Maximum Ratings, Ta = +25°C, Single Diode Symbol Absolute Maximum[1] Parameter HSMS-285x HSMS-286x 75 mW 250 mW PT Total Device Dissipation[2] PIV Peak Inverse Voltage 2.0 V 4.0 V TJ Junction Temperature 150°C 150°C TSTG Storage Temperature -65°C to 150°C

HSMS2850

Abstract: HSMS-2850 HSMS-285X HSMS-2860 HSMS-286X p2p50 marking code 346 SOT-23 marking l31 L30 SOT143
Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/µW at 915 MHz up to 35 mV/µW at 2.45 GHz up to 25 mV/µW at 5.80 GHz

marking 2U 58 diode

Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Contextual Info: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz

MFW SOT23

Abstract: Diode marking MFW Diode sot23 marking MFW L31 diode sot-23 sot23 marking MFW MFW SOT23 MARKING schottky diode marking A7 diode T31 Marking HSMS 2821 SOT-23 MARKING T31
Contextual Info: Wfw\ mLUMHP AECWKLAERTDT Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface Mount SOT-23/ SOT-143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level

HSMS2850

Abstract: HSMS-285A HSMS-2850 HSMS-285X HSMS-2860 HSMS-286X
Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/µW at 915 MHz up to 35 mV/µW at 2.45 GHz up to 25 mV/µW at 5.80 GHz

HSMS-2850

Abstract: SOT-23 marking l31 sot143 code marking l30 HSMS2850
Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/µW at 915 MHz up to 35 mV/µW at 2.45 GHz up to 25 mV/µW at 5.80 GHz

Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/µW at 915 MHz up to 35 mV/µW at 2.45 GHz up to 25 mV/µW at 5.80 GHz

k2915

Abstract: SOT-23 marking l31 sot143 code marking l30 sot143 marking code 2c marking code 3h diode JW sot23 L30 SOT143 HSMS2850 hsms-285x JW SOT-23
Contextual Info: What HEWLETT* m L liM PACKARD Surface Mount Microwave Schottin Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|jW at 915 MHz up to 35 mV/|jW at 2.45 GHz