L-803 IC Search Results

Contextual Info: W741C260 ßVinbond H lü ix Electronics Corp. Cwinbond X ü n x Electronics Corp. Headquarters Winbond Electronics (H.K. Ltd. Rm . 803, W orld Trade Square, T ow er II, No. 4, C reation Rd. Ill, 123 H oi B u n Rd., Kw un Tong, S cie n ce -B a se d In dustrial Park,

9023TCB000A

Abstract: 9013TCB tj08 n 9013 s 9013 h 331 9013TCB000A 9003TCB000A
Contextual Info: 9003 B o a r d In T e r m i n a l mm UNIT inch 6.40 2.5 090 CO u v0i.o o i8OB .039-803 1.1 .043 rt w RECOMMENDED HOLE PATTERN IO SECTION B - B SECTION A -A V///Æ777X P .C .B —' 1.55 .061 9013 I ocd> B o a r d In T e r m i n a l mm .331 J .433 7.8 .307 ^

KH42HM2-851

Abstract: KH42HM2-852 KH42HM2-801 KH42HM2 KH42HM2-802 100KPPS 034-CA KH42HM KH42
Contextual Info: 2 -P h a s e Hybrid S tep p in g M otor ^ 1.8 KH42 series 800 type HIGH TORQUE, LOW VIBRATION AND LOW NOISE • STANDARD SPECIFICATIONS M O D E L KH42HM2 U N IT -801 DRIVE METHOD NUMBER OF PHASES STEP ANGLE d e g ./s te p -802 -803 -852 -851 UNI-POLAR BI-POLAR

Contextual Info: r .n o t e s : i.ooi rue BB-CD-803 -0 2 ¡ no. m a t ' l : co pper stock t k n . PLATING: ELECTRO TIN (.0003 MIN) 081 MIN-, TIN-PLATED BRASS FUNNEL FERRULE © NYLON INSULATION (COLOR CODED BLUE) 2 0 6 STUD SIZES:(-.005) .170*MWID 4 32 02 « .094 04 = .1 19

B1133

Abstract: B 1184 J1311 W/CDBM MARTA
Contextual Info: REVISIONS L TR DESCRIPTION SEE PACKAGE XI D E S I GNATOR A B C D E F G H J K L M N P R S T U V w X Y 2 3 4 5 6 XI PACKAGE WI DTH ±30/£m 777 803 828 853 879 904 930 955 980 1006 1031 1057 1082 1107 1 133 1 1 58 1184 1209 1234 1260 1285 1311 1336 1361 1387

70498-5068

Abstract: 70498-2068 70497-1068
Contextual Info: 70498 5EE NOTE 5 DETAIL 'A' ASSEMBLED WITHOUT S T R A IN -R E L IE F SCALE 8s I .803 (20.4O) 70498 422 ( 10.72) ASSEMBLED (STRAIN 008/( R ELIER WITH IS STRAIN LOADED R ELIEF ARTER TERMINATION) 0. 2 0 ) < 1 15 6±. 0 0 0 4 50 CIRCUIT SHOWN ) . 3 9 6 ± 0 . 0 10)

nytronics delay

Abstract: Nytronics DDL-450F
Contextual Info: NYTRONICS INC/ NYTRONICS 25E D ; ^ 7 0 0 ORANGE STREET, DARLINGTON, S. C. 29532 ' ‘ f ; ' ‘ ‘- : 803 393-5421 • -TWX 810-665*2182 14 10 12 • b?2177H OODOSfil fi ■ 7 ^ DDL-XXXF & LPS-XXX ADVANCED SCHOTTKY DELAY LINES 8 A D V A N C E D S C H O T T K Y (D D L -X X X F )

IC 7805 pin diagram

Abstract: block diagram of IC 7805 7805 pi IC 7805 14 pin diagram lc 7805 pl 7805 7805 ic free ic 7805 7805 LA 7805
Contextual Info: SN74ALVC7 803, S N 7 4 A L V C 7805, S N 7 4 A L V C 7 8 1 3 51 2 x 1 8, 256 x 1 8,64 x 1 8 L O W - P O W E R E D C L O C K E D FIRST-IN, F I RS T- OUT M E M O R I E S S C A S 436B -JU N E 1 9 9 4 - REVISED JULY 1995 DL PACKAGE TOP VIEW O p e r a t e s a t 3 - V to 3 . 6 - V V q q

B111C

Abstract: RNSRY202
Contextual Info: It rin JL Tr E X T E R N A L V F M S T E P -U P DC/DC CO N VERTER CO N TR O LLER M O .EA -Ö 42-9 803 RN5RY202 OUTLINE T h e RN5RY202 S eries are VFM chopper C ontrol IC's for step-up D C /D C co n v erter w ith an ex tern al pow er tra n sis­ to r featu rin g h igh output voltage accuracy and low supply cu rre n t by CM O S process. T h e RN5RY202 S eries ICs

b 803 a

Contextual Info: SEK18 MKVINC Number of contacts 10-64 Card edge connectors for insulation displacement Identification C ard edg e c o n n e c to rs fo r in s u la tio n d is p la c e m e n t fo rR C .B . th ic k n e s s 1.6 m m Number of contacts * Part No. Drawing \ 10 14

Contextual Info: D A L L A S DS1803 Addrsssabl Dual Digital PotGntiomGtGr s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 3V or 5V Power Supplies C 1 14 ] VCC L1 c 2 13 ] NC wi [2 3 12 HO A2 Q 4 11 :lo 5 10 "2 wo A0 Q 6 9 2 SDA hi • Ultra-low power consumption • Two digitally controlled, 256-position potentiometers

702 Z TRANSISTOR

Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
Contextual Info: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS

ut 803A

Abstract: SM803 b 803a SM805 SM803A
Contextual Info: SM 803/SM 803A/SM 805/SM 805A CMOS 8-Bit Single Chip Microcomuputer SM803/SM803A SM805/SM805A • CMOS 8-Bit Single Chip Microcomuputers Description Pin Connections T he S M 8 0 3 /A , S M 8 0 5 /A are CMOS 8 -b it sin ­ gle chip m icrocom puters which have 4K bytes and

Philips 2222 capacitor

Abstract: 2222 capacitor philips 29104 2222 033 2222 033 philips PHILIPS capacitors 2222 390 HM 2222 A capacitor 2220 2222 393 29224 philips capacitor 2222
Contextual Info: Metallized Polyphenylene Sulphide Film Capacitors Series 2222 390/394 Metallized Polyphenylene Sulphide Film Capacitors MKPS Chip Capacitor Series 2222 390/394 Features Style 2222 2222 2222 *2222 '? • Surface Mounted • Supplied in tape on reel Q u ick R eference Data

SBL Series

Abstract: SBL-121 SBL-221 SBL-801 EN3056 30562 J SBL121
Contextual Info: Ordering number : EN3056 No.3056 _ /_ SBL Series / B eam Lead Type GaAs S chottky B a rrie r Diode / / C to Millimeter Band Mixer, Detector, Modulator Applications F e a tu re s - F a c ilita te s easy m o u n tin g on MIC M icrowave IC

Contextual Info: i M ETR IC CONVERSIO N TABLE i i_ _ Aluminum Electrolytic Capacitors UNINSULATED CASE DIMENSIONS Case Dimensions Dia. mm 5 6.3 8 10 10 10 10 10 12.5 12.5 12.5 12.5 12.5 16 16 16 18 18 Fig. A Length mm F mm

ic 803

Abstract: 4520C lta 803 I8010L 8010c ic803 8031 er
Contextual Info: _ AH-2_ MIC8030/8031 Application Hints MIC8030/MIC8031 Application Hints on Compatibility with Display Drivers Produced by AMI and HOLT T h e M IC 8 030/M IC 8031 can be m a de com p a tib le w ith all b o n d in g op tio n s of the G o u ld -A M I S 452 0 as w ell as all

JE802

Contextual Info: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic

Contextual Info: 802 Series 802 Series 803 Series !1h I "r ' + hAi an Inch es Dim. .05 6-.066 .05 2-,072 1.115-1.135 .55 2-,572 .4 9 0 - 510 .18 0- 200 DIA. .750 MAX. .3 0 2 -.3 2 2 A B C D E F G H c an -I H k > o M illim e te r 1.42-1.68 1.32-1.83 28.32-28.83 14.02-14.53

TRANSISTOR S 802

Abstract: KSE800 ic 801
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic

Contextual Info: C E R A M IC H IG H RELIABILITY M O LD E D /A X IA L & RADIAL_ KEMET . GENERAL INFO RM A TIO N M IL -C -12 3 INTRODUCTION TABLE I MIL-C-123 specification covers the general requirements for high reliability, general purpose BX and temperature stable (BP) ceramic dielectric fixed

kse800

Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
Contextual Info: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic

IC 7377 pin diagram

Abstract: mp 1060 ceramic filter ffe
Contextual Info: 19-1217; Rev 0; 4/97 V M ilX I A I R e g u l a t e d 3 . 3 V Ch a r g e P u mp The MAX679 step-up, regulated charge pum p gener­ ates a 3.3V ±4 % output vo ltag e from a 1.8V to 3.6V in p u t v o lta g e two a lka lin e , N iC d, or NiM H; o r one Lithium-Ion battery . Output current is 20mA (min) from

JE801

Abstract: JE700 transistor H 802 y 803
Contextual Info: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic