L SERIES Search Results

Contextual Info: B1 LF - Series 1 Watt Isolated DC-DC Converter Single / Dual / Dual Separate Output 1 . Features l l l l l l l l 7 Pin SIL / 14 Pin DIL Package Low Ripple And Noise Input / Output Isolation 1K Vdc Or 3K Vdc 100% Burn-In Input Filter With Internal Capacitor

sp101 655

Abstract: SP1690 SP1670 synchronous counter using 4 flip flip SP101 SP10137 SP10231
Contextual Info: SP10137 O PLESSEY ECL 10,000 SERIES SEMICONDUCTORS SP10137 U N IVER SA L DECADE C O UNTER S E Q U E N T IA L T R U T H TA B LE * IN P U T S O UTPUTS C arry C loc k S1 S2 DO D1 D2 D3 In L L H H H L o L H o o L H o o L H o o L H o o L H o o o L H o o H H o o

Contextual Info: BD LF - Series 2 To 6 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features l Wide 2 : 1 Input Range l Low Ripple And Noise l Input / Output Isolation 1.5K Vdc Or 3K Vdc l 100% Burn-In l Input π - Filter l Custom Design Available l Net Weight : 12 g / 17 g

AQ13

Contextual Info: Microwave MLC’s AQ Series L W L W W L bw bw bw Approx. L x W x T L = .063"/1.60mm W = .032"/.813mm T = .035"/.889mm max. Approx. L x W x T L = .055"/1.4mm W = .055"/1.4mm T = .057"/1.45mm max. AQ06 A 1J 10 T 5 1R T T These porcelain and ceramic dielectric multilayer

Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD525G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix YMD525G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glassepoxy substrate. Hynix HYMD525G726A(L)S4-M/K/H/L series provide a high performance 8-byte interface in 5.25"

Contextual Info: 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD532646A L 6-M/K/H/L DESCRIPTION Preliminary Hynix HYMD532646A(L)6-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD532646A(L)6-M/

Contextual Info: 16Mx64 bits Unbuffered DDR SDRAM DIMM HYMD116645B L 8-M/K/H/L DESCRIPTION Hynix HYMD116645B(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD116645B(L)8-M/K/

Contextual Info: 32Mx72 bits Registered DDR SDRAM DIMM HYMD232G726A L 8-M/K/H/L DESCRIPTION Hynix HYMD232G726A(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD232G726A(L)8-M/

rcas 4250

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726C L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726C(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726C(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

RESONATOR 4MHZ

Abstract: adc doc hen vd peps 100PF LC6500 EVA-TB6543 intel 2732 128x4bits BI802 BH RV transistor
Contextual Info: Ordering number: EN 4364A No. 4364A 11 LC6543N/F/L, 6546N/F/L CMOS L S I' SIN GLE-CH IP 4-BIT M ICRO CO M PUTER FO R SM A LL-SC A LE CO N TRO L-O RIEN TED A PPLIC A TIO N S Overview The LC6543N/F/L, LC6546N/F/L belong to our single-chip 4-bit microcomputer LC6500 series fabicated using

1431l

Abstract: EVA86000
Contextual Info: Ordering number : ENN6498 CMOS IC LC651432N/F/L, 651431N/F/L Four-Bit CMOS Microcontrollers for Small-Scale Control Applications Overview The LC651431N/F/L and LC651432N/F/L are the smallscale control models in Sanyo’s LC6500 Series of 4-bit microcontrollers and feature the same basic architecture

Contextual Info: 32Mx72 bits Unbuffered DDR SO-DIMM HYMD232M726A L 8-J/M/K/H/L DESCRIPTION Hynix HYMD232M726A(L)8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix

IR 70hfl80s05

Abstract: DQ-203 L80S05 z65a 40HFL 40HFL10S10 70HFL 85HFL L40S02 diode 70 hfl 80 s05
Contextual Info: Data Sheet No. PD-2.093 IM TERINJATICDISIAL. RECTIFIER lIO R l 40HFL, 70HFL, L SERIES 4DA, 7QA, 85A Fa st Recovery Rectifiers Major Ratings and Characteristics Description 4 0 H F L . 7 0 H F L . 8 5 H F L . Units 'f îa 40 70 85 A 75 75 75 “C

1A154

Abstract: LN528RA LN528GA LN528GK LN528RK
Contextual Info: n bT32flS2 001503b 53b Numeric Display 2 Digit 20.0mm . 8 ” Series T y p e N o. L ig h tin g C o lo r L N 5 2 8 R A . R e d L N 5 2 8 R K . R e d L N 5 2 8 G A . G re e n

27721

Abstract: EN-12449 TL-10632 TS-I00I3
Contextual Info: C A T A L O G L IS T IN G MICRO SWITCH en nv i FREtPORI K l il^OiS A DIVISION OF rto mra HONEYWELL SWITCH-TOGGLE coo« • « • > • t- ct O L S * 112TW59-10 SERIES! CHART 1 MILITARY PART NUMBER .072 WIDE X .030 D EEP KEVWAY ELECTRICAL DATA LOCKING COMBINATIONS

Contextual Info: MKF0408 series General Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves MKF0408-0216 GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain(dB) 23 Features Frequency Range: 4.0～8.0GHz l Custom design available l The film,high reliable l Connectorized package available

marking code wa8

Contextual Info: Aluminum Electrolytic Capacitors/FC Surface Mount Type Series : FC Low ESR n Features l Life time: 105°C 1000 h l Low impedance 1/2 for HA series l 5.5 mm height ( < f6 . 3 ) Series : FC ­ Series : HA n Specifications Operating Temp.Range -40 to + 105°C

36CX1

Contextual Info: MICRO SWITCH F R E E P O R T . I L LI NOI S . U S A A DI VI SI ON O F H O N E Y W E L L FED. M FG . CODE c a ta lo g S W ITC H -E N C L O S E D lis tin g 36C X SERIES CHART 1 •«•2» 32 DIA MAX if ÜJ er r” Lü h - co er x < o x CO o ro O K Z 9 8 DIA

transistor 1 j42

Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation

Contextual Info: - • 27DbflMb D D D D l b T bib ■ SERIES HVS ”4 % I 2,500 to 30>000 Vo,ts U ^ l— 3 Amps. Standard Recovery DIMENSIONS See table L" x 0.75‘ W X 0.40* H Leads: 2 . 0 " long, 0,050" dia. Axial Lead • Flat Pack • Glass Passivated

Contextual Info: UF4/HER1 SERIES REVERSE VOLTAGE FORWARD CURRENT ULTRA FAST RECTIFIERS to 1 0 0 0 Volts - 1 . 0 Amperes -5 0 DC> -4 1 FEATURES • L ow co st • D iffused junction • Ultra fast sw itching for high efficiency • L ow reverse leakage current • L ow forw ard voltage drop

Contextual Info: HY5DU12422A L T HY5DU12822A(L)T HY5DU121622A(L)T 512Mb DDR SDRAM HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5DU56422C L F HY5DU56822C(L)F HY5DU561622C(L)F 256M DDR SDRAM HY5DU56422C(L)F HY5DU56822C(L)F HY5DU561622C(L)F This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5DU28422D L T HY5DU28822D(L)T HY5DU281622D(L)T 128Mb-S DDR SDRAM HY5DU28422D(L)T HY5DU28822D(L)T HY5DU281622D(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.