L 9143 Search Results

IRF5210

Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description

IRF5210

Abstract: 91434A
Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description

IRF9540N

Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

IRF9540N

Abstract: datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier

F7101

Abstract: IRF7101 IRF7311 MS-012AA
Contextual Info: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: FAST RECOVERY HIGH VOLTAGE 25 mA MINIATURE SILICON RECTIFIERS SM ALL SIZE MOLDED PACKAGE PRV 3,000 TO 12,000 VOLTS 1.0 INCH MIN. LEADS LOW LEAKAG E EDI Type PRV V o lts D L 300 3,000 D L 500 5,000 D L8Ö 0 8,000 D L 1000 10,000 D L 1200 12,000 E L E C T R IC A L C H A R A C T E R IS T IC S

EKXJ

Contextual Info: Anschlussarten Terminal Types Idenf" - Nr. / Part No: r Ansehlusslaenge L / Terminal Length L: 15.5m m EE30 *EE-Zone 3.0 mn EE20 *EE-Zone 2.0 mm EE10 =EE-Zone 1.0 mn l>f» i. »! * « 8Fehlende R EHasse F ER E N C E 0H!L¥ und Angaben gemaess EC 603-2/DH 41612

Contextual Info: Skip to content Tyco Electronics Segment Indicator | | | Tyco Electronics Home Tyco Electronics -Our commitment .Your advantage . Search [Dojo Generated ] l Products ¡ ¡ ¡ ¡ ¡ l Documentation ¡ ¡ ¡ ¡ ¡ l ¡ ¡ ¡ ¡ Check Product Compliance Cross Reference Products

Contextual Info: jvw\yLwv\ 19-1128; Rev 0; 9/96 D i g i t a l l y C o n t r o l l e d CCFL B a c k l i g h t Pow er Supplies Description The M A X 16 1 0 /M A X 1 611 are fu lly in te g ra te d , h ig h e fficie n cy drivers for c o ld -ca th o d e fluorescent lam ps C C F L s . T hey o p e ra te from a 4 .5 V to 2 6 V p o w e r

Contextual Info: Skip to content Tyco Electronics Segment Indicator | | | Tyco Electronics Home Tyco Electronics -Our commitment .Your advantage . Search [Dojo Generated ] l Products ¡ ¡ ¡ ¡ ¡ l Documentation ¡ ¡ ¡ ¡ ¡ l ¡ ¡ ¡ ¡ Check Product Compliance Cross Reference Products

Contextual Info: T H I S D R A W I N G I S A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N I T I S S U B J E C T TO CHANGE AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N SH O U L D BE C O N T A C T E D FOR T H E L A T E S T R E V I S I O N

Contextual Info: T H I S D R A W I N G I S A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N I T I S S U B J E C T TO CHANGE AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N SH O U L D BE C O N T A C T E D FOR T H E L A T E S T R E V I S I O N

Contextual Info: T H I S D R A W I N G I S A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N I T I S S U B J E C T TO CHANGE AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N SH O U L D BE C O N T A C T E D FOR T H E L A T E S T R E V I S I O N

2-1437506-0

Abstract: 14P2 M83505 12P2 B197 8134-HC-6P3 6-1437514-9 8134-HC-5P3 8134-HC-8P2 7-1437514-0
Contextual Info: 7 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . ~ RELEASED FO R 6 5 PU BLICATIO N ALL RIGHTS RESERVED. By - D ±0.13 [±.005] F ±0.025 [±.0 0 1 0 ] D C P L A T E D -T H R O U G H -H O L E REQUIREMENTS S C A L E 25:1 BERYLL IUM COPPER P ER ATSM B197.

6PCV-14-1205

Abstract: 6pcv-10-003 6PCV-04-715 6PCV-15-993
Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY ^ C O E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS - , - R E V IS IO N S R E S E R VE D . C O R P O R A T IO N . MATERIAL: HOUSING: THERMOPLASTIC, U L 9 4 V - 0 BLACK.

cz 9938

Abstract: SDES-99000-0003 b 1045 SDA-90120
Contextual Info: 10 5 CKT S !Z E WAFER- I5 X C L A S S F I L L E D TO UL 9 4 v - 0 . COLOUR - B L A C K , POLYESTER - 0 - 0 0 . 2 5 / . 0 I0 4 1 3 D IM . ' 0" 2 1 ( A ' ( -G.45) C K T D IM ." B +0 S IZ E -.018 (2 .5 4 ) . IOO 1X21 (5 0 .8 0 ) D IM . 1 » A „ D I M M 1B

cz 9938

Abstract: 9933 b SDES-99000-0003 9952 h NI 9933 lt 9306 l 9143 9012-011 IR 9138 ir 9136
Contextual Info: 10 5 WAFER- 157. G L A S S F I L L E D TO UL 9 4 v - 0 . COLOUR - B L A C K , POLYESTER -0-I0 0.25 7.0 I0 I 3 IX / IX 2 (2 .5 4 > . IOO IX D I M . ' A" 2 1 ' ( -0A5 A ) CKT D IM ." B +0 S IZ E -.018 (2 .5 4 ) . IOO 1X21 (5 .0 8 ) . 200 1X22 CKT S 1Z E ( 2 .5 4 ±g:?o°)

046J

Abstract: ansley 1-1437356-6 171-10g
Contextual Info: TH I S DRAWING IS COPYRIGHT UNPUBLISHED. 2000 RELEASED BY TYCO ELECTRONICS COR P O R AT I O N . A L L 2000 PUBLICATION FOR R IGHTS L OC RESERVED. REV I S I O N S D I ST Al LTR A1 REEL LENGHT 30.5m DIM. A DIM. B 5.00 3.81 7.62 10.16 11.43 6.35 8 .8 9 C DESCRIPTION

SN74184

Abstract: SN74185A SN54184 SN54185A binary to bcd 12 bits bcd binary conversion application note SN5488 SN74185
Contextual Info: CIRCUIT TYPES SN54184, SN54185A, SN74184, SN74185A BCD-TO-BINARY AND BINARY-TO-BCD CONVERTERS SN54184, SN74184 BCD-TO-BINARY CO NVERTERS SN54185A, SN74185A BINARY-TO-BCD CO NVERTERS J O R N D U A L - IN - L IN E O R W F L A T P A C K A G E T O P V IE W lt

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T RELEASED BY ^ C O E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. LTR MATERIAL: HOUSING: THERMOPLASTIC, U L 9 4 V - 2 , BLACK.

Contextual Info: P r o d u c t SPECiFiCATiON P S 0 0 2 7 0 0 -T V C 1 199 ZiLOG W o r l d w id e H e a d q u a r t e r s • T elepho ne: 408 .55 8 .85 0 0 910 E. H a m i l t o n A v e n u e • C a m p b e l l , C A 95008 408.55 8 .83 0 0 • !-!TTP://www,ZtLOG.com • Fa x :

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL BY ^ C O C O P Y R IG H T E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L REVISIO N S RIGHTS R E S E R VE D . C O R P O R A T IO N . LTR MTERIALS: HOUSING: THERMOPLASTIC, U L94V- 0, BLACK.