L 65 70 C Search Results

PPMF 70-300.0 r K

Contextual Info: #6171 Discharge Capacitors 65 M 10 PPMF 70-300.0 r K 65 65 1 3 2 4 H 7 26 20 ø 5.5 Dielectric of metallized polypropylene 2 3 4 Threaded outputs B 65 1 Resin end sealing Aluminium case thick 1.2 mm L 355 375 Parameter Capacitance Tolerance Rated Voltage Operating Voltage

176X220

Abstract: ILI9221 HDA200-1 m2160
Contextual Info: HDA200-1 2.0” ,176 X 220 TFT Color Graphics ,LED(White) Backlight Dimensional Drawing Electrical Characteristics (VDD=2.8±0.115V 25°C) Features Features Viewing degrees High

Contextual Info: CONFORMAL COATED RF CHOKES 77F S ERIES Test Miller L±10% Q Freq. Number Min. MHz 77F1R0K 1.0 45 25 77F1R2K 1.2 50 7.9 77F1R5K 1.5 50 7.9 77F1R8K 1.8 55 7.9 77F2R2K 2.2 55 7.9 77F2R7K 2.7 60 7.9 77F3R3K 3.3 65 7.9 77F3R9K 3.9 65 7.9 77F4R7K 4.7 70 7.9 77F5R6K

Contextual Info: Dim ensional D ata HOUSINGS All Dimensions in Millimeters Code L L1 L2 W W1 W2 H a 80 70 52 43 35 32 29 4.3 b 93 83 65 43 35 32 28 4.3 c 113 103 85.5 43 35 32 28 4.3 d 140 130 112 43 35 32 28 4.3 e 124 110 86 84 71 65 35 5.5 f 165 148 117 90 81 70 44 6.4 g

TFT -350013

Contextual Info: BT104BBDACH352e$ 10.4" Color TFT-LCD video module. TFT LCD: 1. 10.4 inch TFT LCD panel BT104BBNNCH$. 2. View angle U/D/L/R : 55/65/70/70 3. Resolution: 800*(RGB)*600 (pixels), 0.264 (h) x 0.264 (v) mm dot pitch. 4. Brightness (cd/m2): 230cd/m2 Typical. 5. Contrast Ratio: 500:1.

3 inch TFT LCD

Abstract: LR55
Contextual Info: BT104BBBACH352e$ 10.4" Color TFT-LCD video module. TFT LCD: 1. 10.4 inch TFT LCD panel BT104BBNNCH$. 2. View angle U/D/L/R : 55/65/70/70 3. Resolution: 800*(RGB)*600 (pixels), 0.264 (h) x 0.264 (v) mm dot pitch. 4. Brightness (cd/m2): 230cd/m2 Typical. 5. Contrast Ratio: 500:1.

Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56

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Abstract: 12345
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56

Contextual Info: PTC Thermistors HEATERS FOR CURING IRONS 3.7 + 0.3 Fig. 1 157 [6.181] 65 ± 2 [2.559 ± .079| in T 8 o P 6 ± 2 [ . 2 3 6 ± .079 + l +l sal - L. 70 ± 5 2.756 ± 1 9 7 ] S8 + l +i P J l= 3 > CO co , Fig. 2 Dimensions in mm [inches] P art No. 922Y27E102YR30

Contextual Info: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *

darlington pair transistor

Abstract: mml 600 33T4 operational amplifier-741
Contextual Info: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- PAKAGE T O -9 9 8 LEADS _ T p l / —• ? / _ Absolute Maxim um Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T

A1803

Contextual Info: in t ^ l p,aiL 51C256H HIGH PERFORMANCE RIPPLEMODETM 256K X 1 CHMOS DYNAMIC RAM 51C256H-12t Maximum Access Time ns 120 Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 55 65 Ripplemode Operation 51C256H-15 150 70 B0 21C256H-20 209 90 100

Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. ±30% Inductance 100 kHz/ 0.1 mA L 2x 65 µH Rated current @ 70°C IR 5.0 A max. DC Resistance @ 20°C RDC 2x 13 mΩ ±10% Rated voltage

JEC 600 watts amplifier schematic diagram

Contextual Info: ANALOG DEVICES 12-Bit, 65 MSPS IF Sampling A/D Converter AD6640 FEATURES 65 M S P S M in im u m S a m p le Rate 80 dB S p urio u s-F ree D y n a m ic Range IF -S a m p lin g to 70 M H z 710 m W P o w e r D issipation F U N C T IO N A L B L O C K D IA G R A M

80-QFP-1420C

Abstract: 7 seg KS57P2316 149345 33740 12seg
Contextual Info: BONDING DIAGRAM PRODUCT PAGE KS57P2316 1 80 75 REV NO. 70 65 61 5 60 10 55 Y = 4460um ID : -1552 -1997 X = 3620um 50 15 CJ7235X 45 20 21 25 TITLE 30 35 40 41 CJ7235X #1 L/F MAT’L ALLOY42 PKG TYPE 80_QFP_1420C CHIP SIZE 3620x4460um DEV NAME CJ7235X_Rev0_1420C

Contextual Info: 93 Mating face acc. to IEC 61754-20 X VO tS l HARTING PushPull LC duplex, overmolded j -Protection level: IP67/65 -Tem perature range: -40°C .+70°C 20 33582313210015 321 ± 3.21 19 33582313000015 300 ± 3 18 33582312290015 229 ± 2.29 17 33582311480015

SSD103

Contextual Info: Surface-mount Power Transistor SSD103 Test Conditions ICBO IEBO VCEO hFE VCE sat VFEC Es/b VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH min 60 400 65 800 0.11 1.25 max 10 10 70 1500 0.15 1.5 80

Contextual Info: sens Continued It (AMPS) 50 55 70 @ T c (°C) 75 75 110 80 ITSM (AMPS) 500 500 1000 1600 ss f o l £1! CASE TO-218 ISOL TO-218 VRRM (VOLTS) ISOLATED 110 80 1! 1600 11 o a Jj T TO-65 TO-83 TO-94 200 CS218I-50B CS218-55B* CS65-70B CS83-110B CS94-110B 400 CS218I-50D

Contextual Info: Customer Information Sheet D R A W I N G No.: M 2 0 - 1 18 0 0 X X S H E E T 2 OF 2 I IF IN D O U B T - ASK | | NOT T O S C A L E THIRD ANGLE PROJECTION ALL D I M E N S I O N S IN m m I .70 |* 2 .30»| I .65 1.50 t SECTION C-C ORDER CODE 1 .70 M 2 0 - I 1800XX

Contextual Info: 1N6096 asi SCHOTTKY BARRIER RECTIFIER PACKAGE STYLE D O - 4 DESCRIPTION: s The ASI 1N6096 is Designed for General Purpose and Switching Power Supply Applications. Y M B O MILLIMETERS L A 0.405 10.28 b 0.250 6.35 25 A Ave @ Tc = 70 °C V rw M 40 V Tj -65 °C t o +125 °C

Contextual Info: r li S3 M S k <S 3 1 I 2 PRODUCT NO. 72206-0DQCA NOTE 65 52.07 41.01 -•4 h - 2.0 NOTES; i4 = 1 * 1.905-^" 4-X .70 S* 3c l ° E "-T jiii. i | _ _ _ □_ l_ C _ _ _ _ iD ^ a _ ^^ £ 3L X, a S i \ 3 0 mu 1 8mm MIN CARD EJECT. 2 PUSH-ROD TRAVEL; 0.5mm 3 i| ifo[|'~n_

Contextual Info: A Return loss F r e q u e n c y MHz 4 10 16 20 31,25 62,5 100 (dB) 23 25 25 25 2 3,6 21,5 20,1 Near-end crosstalk attenuation F r e q u e n c y (MHz) 1 4 10 16 20 31,25 62,5 100 Typ v a l u e (dB - 100m) 80 76 70 65 63 60 55 50 Far-end crosstalk attenuation

IC-8958

Abstract: uPA672T M0101 PA672T
Contextual Info: z r — • S — h * Silicon T ran s is to r PA672T JuPA672Tti, MOS F E T ^ ^ f - F * ] » - i- J U Kt ^ W tiL : mm BJLB To 0 .2 T *8 ffi 5 4 o SC-70 J ' t y ' r —i / t . M W ' C X DJ'i"jJr —v l - h 7 > y ^ i £ B~B o p.65. 1.3 .0 .6 ^ 2 .0 ± 0.2 6

TBP38L166

Contextual Info: TEXAS INSTR -CASIC/nEHORY} 70 D E I fl Tb lV aS 0036703 =1 | • -1 ^ 1, - 1 3 - 2 5 T B P 3 8 L 1 65, T B P 3 8 L1 6 6 , T B P 3 8 L 1 6 X 1 6 , 384-BIT 2048 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ ONLY MEMORY WITH 3-STATE OUTPUTS D 2 9 0 9 . JA N U A R Y 1 9 8 5 -R E V IS E D JU LY 1 9 8 5