L 42 04 Search Results

Contextual Info: METALIZED POLYESTER A32 Plastic Case Radial Lead 35 VDC MFD .0010 .0012 .0015 .0018 .0022 T ±.01 .18 .18 .18 .18 .18 .30 .30 .30 .30 .30 L S ±.01 ±.015 .42 .30 .42 .30 .42 .30 .42 .30 .42 .30 .0027 .18 .30 .42 .0033 .0039 .0047 .0056 .18 .18 .18 .18 .30

Contextual Info: 19040 10 LO OSE PC. LOOSE PC. M A T E R IA L ENGINEERING NUMBER NUMBER ON T A P E M A T E R IA L NUMBER 19 04 000 42 19 04 000 96 19040-0096 ON TAPE ENGINEERING NUMBER STU D SIZE HOLE S IZ E "S" 0.146/3.71 "D‘ ’H- 'L' .42/10.7 1.39/35.3 .42/10.7 1.39/35.3

CT-260

Contextual Info: lËürâWÉmm Terminals . - ^ , ^ §> '• »f l Dimensions In. RING TERMINALS PANDUIT Part Number Non-lnsulated • Brazed Seam • Beveled Wire Lead-In .52 .20 .16 .42 100 1000 1000 10,000 .52 .20 .16 .42 100 1000

SGS-Thomson mosfet ipak

Abstract: VN MOSFET mosfet vn 10 1SS P
Contextual Info: S G S -T H O M S O N M D O ^m iC T IfM O lg l V N D 7 N 0 4 /V N D 7 N 0 4 -1 V N P 7 N 0 4 F I/K 7 N 0 4 FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND7N04 V N D 7N 04- 1 VNP7N04FI VNK7N04FM Vclam p 42 42 42 42 V V V V RDS on 11im 0.14 a. 0.14 Q.

J162

Abstract: J1625 fixation
Contextual Info: HI-AMP für Nennspannungen bis 42 V / HI-AMP for rated voltage up to 42 V / HI-AMP pour tension nom. jusqu'à 42 V Achtung: Produkt ist zur Zeit ausschließlich in Europa verfügbar / Attention: Product is only available in Europe at this time / Attention: Produit est uniquement disponible en Europe pour l’ instant

CEE2X56S-V3Z14

Abstract: EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS
Contextual Info: CEE2X91S-V7Z14 CEE2X91S-VI1Z14 36 75 91 91 112 150 182 182 TABLE OF DIMENSIONS N& OF CONTACT PARS D E BAY A BAY B 11 45 .5 9 0 N4.991 Z39Q rSB.171 37 38 1.890 [4&011 1.940 [49.281 42 49 2.140 r5 4 J6 l 2.490 I83 45 1 42 49 2.140 rS 4 .3 6 l 2.490 f8 3 ¿ 5 l

sealtite

Contextual Info: 42 Series 42 SealtiteTM/Liquidtite Conduit Backshells CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING 420 F S 001 M 16 03-6 Product Series Length: S only 1/2 inch increments: e.g. 6 = 3 inches Connector Designator Dash No. (Table IV) Angular Function

IRFP2907

Abstract: IRFP2907 Application Notes mosfet ir 840
Contextual Info: PD -93906C IRFP2907 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications l l Benefits l l l l l l D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

MS-020

Abstract: SDIP42
Contextual Info: PDF: 2000 Jan 04 Philips Semiconductors Package outline seating plane SDIP42: plastic shrink dual in-line package; 42 leads 600 mil SOT270-1 ME D A2 L A A1 c e Z b1 (e 1) w M MH b 22 42 pin 1 index E 1 21 5 10 mm scale DIMENSIONS (mm are the original dimensions)

Contextual Info: Surface Mount SKY-42+ SKY-42 Frequency Mixer Level 7 LO Power +7 dBm 2000 to 4200 MHz Maximum Ratings Operating Temperature Storage Temperature Features • low conversion loss, 5.0 dB typ. • good L-R isolation, 31 dB typ. • J-leads for strain relief

Contextual Info: PD - 95618 IRF3007PbF AUTOMOTIVE MOSFET Typical Applications l l HEXFET Power MOSFET 42 Volts Automotive Electrical Systems Lead-Free D VDSS = 75V Features l l l l l Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

SKY-42

Abstract: lr 2440
Contextual Info: Surface Mount SKY-42+ SKY-42 Frequency Mixer Level 7 LO Power +7 dBm 2000 to 4200 MHz Maximum Ratings Operating Temperature Storage Temperature Features • low conversion loss, 5.0 dB typ. • good L-R isolation, 31 dB typ. • J-leads for strain relief

irf300

Contextual Info: PD - 95618 IRF3007PbF AUTOMOTIVE MOSFET Typical Applications l l HEXFET Power MOSFET 42 Volts Automotive Electrical Systems Lead-Free D VDSS = 75V Features l l l l l Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

AN-994

Abstract: IRF3007L IRF3007S
Contextual Info: PD - 95494 IRF3007SPbF AUTOMOTIVE MOSFET IRF3007LPbF Typical Applications l l HEXFET Power MOSFET 42 Volts Automotive Electrical Systems Lead-Free D VDSS = 75V Features l l l l Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

SKY-42

Abstract: 3330
Contextual Info: Surface Mount SKY-42+ SKY-42 Frequency Mixer Level 7 LO Power +7 dBm 2000 to 4200 MHz Maximum Ratings Operating Temperature Features • low conversion loss, 5.0 dB typ. • good L-R isolation, 31 dB typ. • J-leads for strain relief -40°C to 85°C Storage Temperature

Contextual Info: Surface Mount SKY-42+ SKY-42 Frequency Mixer Level 7 LO Power +7 dBm 2000 to 4200 MHz Maximum Ratings Operating Temperature Features • low conversion loss, 5.0 dB typ. • good L-R isolation, 31 dB typ. • J-leads for strain relief -40°C to 85°C Storage Temperature

SKY-42

Contextual Info: Surface Mount SKY-42+ SKY-42 Frequency Mixer Level 7 LO Power +7 dBm 2000 to 4200 MHz Maximum Ratings Operating Temperature Features • low conversion loss, 5.0 dB typ. • good L-R isolation, 31 dB typ. • J-leads for strain relief -40°C to 85°C Storage Temperature

SKY-42

Contextual Info: Surface Mount SKY-42+ SKY-42 Frequency Mixer Level 7 LO Power +7 dBm 2000 to 4200 MHz Maximum Ratings Features Operating Temperature • low conversion loss, 5.0 dB typ. • good L-R isolation, 31 dB typ. • J-leads for strain relief -40°C to 85°C Storage Temperature

MM375-04A

Contextual Info: Mounting Pad Packing Magazine Name MM375-04A MM375-3A 42 pin Shrink SOP 375 mil 42 22 3° +7° –3° detail of lead end 1 21 A H J E K F G I N C D M B L M S42GT-80-375B-1 NOTE Each lead centerline is located within 0.10 mm (0.004 inch) of its true position (T.P.) at

Contextual Info: EL EC TRICA L SPECIFICATIONS: 1.0 TURNS RATIO: P2-P1 (P4-P3) : (J2-J1) : (J5-J4) 1 : 2 .42 1 : 2 .42 ± ± 3% 3% NDTES 2.0 INDUCTANCE: (P2-P1) 3.0 LEA K AG E 4.0 INTERWINDING 5.0 DC 6.0 DIELECTRIC WITHSTAND: 7.0 R ETURN INDUCTANCE: LOSS 17 P2-P1 P3-P4 CAPACITANCE:

Contextual Info: 10 33789 107.96 ±0.30 4.251 ±.012 99.52 ±0.30 3.918 ±.012 11.11 10.86 ".438 42 TYP. ".17 .428 ~ *4 6 O— ss OB OB 39 w w sä w =8= i^ i 4 HOLES ^^9 ^^9 107 .42 m .35 -NO JUMPER OVER THIS RIB 0.81 .032 TYP.- NOTES: L ? i° J 1. MATERIAL: SEE TABLE

IH5143

Abstract: IH5141 SPST toggle switch IH5145 DG180 DG401 HI-5043 IH5040 IH5140 IH5140MJE
Contextual Info: IH5140 thru IH5145 Semiconductor CT ODU ODUCT R P PR TE OLE TITUTE High-Level CMOS Analog Switches S B April 1999 O S SUB DG401 HI-5043 E L , 1: 03 SIB 390 POS 40, IH514 42, DG4 43, HI-0 045 5 1 5 5 I 5 Features IH 42: HI 03, HI 049, H vices Description IH51 43: DG4 45: HI-5 f single de patible

Contextual Info: Customer Information Sheet DRAWING N o . : M80- 844XXXX SPECIFICATIONS: M AT ER I A L : MOULDING = HIGH TEMP. POLYAMIDE 46, U L 9 4 V - 0 , BLACK C L I P = BE RY L L IUM COPPER S HE L L = COPPER AL LO Y FINISH: 42 : 0 . 30 i GOLD C L I P , 4 . 0 ji 100Z TI N

20E-3

Abstract: 20UNF
Contextual Info: 2 16.03 0.63 0M 5 CLEARANCE 6.3 (0.25)- 10 N R 0 5 .1 (0 .20) / E3 f f l V2" - 20UNF - 2A 28 UNF - 2A 21.4 (0.64) 21.4 ' 0.84) 16.5 (0.65) COMPRESSED HEIGHT 0 42(1.65) ix. 14.4 ^ (0.56) ~ 31.5 (1.24) A/F 8 COMPRESSED HEIGHT 0 42(1 65) 8a 0 3 . 6 / 3 . 5 x 1 . 8 M IN.