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    L 31A Search Results

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    Panasonic Electronic Components FD-L31A

    W20XH29XD3.8 CONVERGENT RE
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    Master Electronics FD-L31A
    • 1 $173.14
    • 10 $166.03
    • 100 $155.38
    • 1000 $155.38
    • 10000 $155.38
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    RS FD-L31A Bulk 1
    • 1 $202.00
    • 10 $185.84
    • 100 $185.84
    • 1000 $185.84
    • 10000 $185.84
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    Sager FD-L31A 1
    • 1 $192.38
    • 10 $186.46
    • 100 $170.70
    • 1000 $166.03
    • 10000 $166.03
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    Microchip Technology Inc EV76L31A

    dsPIC33CH512MP508 MC DIM
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    Master Electronics EV76L31A
    • 1 -
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    Newark EV76L31A Bulk 6 1
    • 1 $21.56
    • 10 $21.56
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    Microchip Technology Inc EV76L31A 89 28 Weeks
    • 1 $20.70
    • 10 $20.70
    • 100 $20.70
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    OMRON Industrial Automation H3CRG8EL31AC200240

    Star Delta Timer
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    Master Electronics H3CRG8EL31AC200240
    • 1 $159.03
    • 10 $140.86
    • 100 $131.05
    • 1000 $131.05
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    TE Connectivity RZL3-1A4-L005-R

    General Purpose Relays RZL3-1A4-L005-R
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    Master Electronics RZL3-1A4-L005-R
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    • 100 $2.82
    • 1000 $2.51
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    OMRON Industrial Automation H3CRG8EL31AC100120

    Star Delta Timer
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    Master Electronics H3CRG8EL31AC100120
    • 1 $168.00
    • 10 $168.00
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    L 31A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFR5305

    Abstract: IRFU5305 63 marking code diode
    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    pd-95025airfr5305pbfirfu5305pbfirfr5305+7irfu5305irfu120irfr/u5305pbfo-252aaeia-481eia-54163 marking code diode PDF

    IRF Power MOSFET code marking

    Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    pd-95025airfr5305pbfirfu5305pbfirfr5305+6irfu5305an-994irfr/u5305pbfo-251aairf power mosfet code markingirf 100a PDF

    IRFR5305

    Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    pd-95025airfr5305pbfirfu5305pbfirfr5305+5irfu5305o-252aaeia-481eia-541irfr p-channel mosfet PDF

    IRFR5305

    Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    pd-95025airfr5305pbfirfu5305pbfirfr5305+5irfu5305moun16eia-481eia-541irf5305 PDF

    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


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    pd-95025airfr5305pbfirfu5305pbfirfr5305+3irfu5305eia-481eia-541 PDF

    l33a

    Abstract: l69b L37B l37a L33B L68B L33A SMD l71b l47B L120B
    Contextual Info: Mechanical Outlines - LED C A SE L-18b C A SE L-19b -01.8 0.07 -01.8(0.07) 04.0(0.16) 0.75(0.03) max athode athode -2.54(0.1) -2.54(0.1) C A SE L-22b C A SE L-30b -05.0(0.2) 03.55 (0.14) athode -2.54(0.1) -2.54(0.1) C A SE L-31a L-31b C A SE L-32a L-32b 02.94


    OCR Scan
    l-18bl-19bl-22bl-30b+14l-31al-31bl-32al-32bl33al69bl37bl37al33bl68bl33a smdl71bl47bl120b PDF

    Contextual Info: PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    irfiz44npbfo-220i840g PDF

    IRFz44n equivalent

    Abstract: k3432 IRFZ44N 12v input 55v output using irfz44n circuit
    Contextual Info: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    irfiz44npbfo-220i840girfz44n equivalent+3k3432irfz44n12v input 55v output using irfz44n circuit PDF

    IRFz44n equivalent

    Abstract: 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n
    Contextual Info: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    irfiz44npbfo-220i840girfz44n equivalent+312v input 55v output using irfz44n circuitirfz44nfor irfz44n PDF

    IRF5305

    Abstract: 55V MOSFET P-Channel k 524 ir
    Contextual Info: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    91385birf5305o-22055v mosfet p-channel+1k 524 ir PDF

    EK 110

    Abstract: IRF5305
    Contextual Info: PD - 9.1385A IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    irf5305o-220ek 110 PDF

    Contextual Info: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    91385birf5305o-220 PDF

    IRF5305

    Contextual Info: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    91385birf5305o-220 PDF

    IRF5305

    Abstract: EPF12 borg
    Contextual Info: PD - 901385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


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    901385birf5305o-220epf12+1borg PDF

    Contextual Info: PD - 91402A IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize


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    1402airfr/u5305irfr5305irfu5305 PDF

    IRFR5305

    Abstract: IRFU5305
    Contextual Info: PD - 91402A IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize


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    1402airfr/u5305irfr5305irfu5305+1i2-7105 PDF

    IRFR5305

    Contextual Info: IRFR/U5305 l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S D-Pak IRFR5305 I-Pak IRFU5305 Description The D-Pak is designed for surface mounting using vapor


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    irfr/u5305irfr5305irfu5305o-251aa+1o-252aa PDF

    7912A

    Abstract: irfp31n50 IRFP31N50L 152x 247Package
    Contextual Info: PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply SMPS l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.15Ω 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits


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    irfp31n50lo-247ac7912airfp31n50+2152x247package PDF

    B1370

    Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
    Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    1403birfiz44no-220b1370+5r b1370irfz44n equivalentmosfet irfz44nfor irfz44nirf1010 mosfet to-220 PDF

    IRFz44n equivalent

    Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
    Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    irfiz44no-220irfz44n equivalentirfz44n+2irfiz44n equivalentirf 630 PDF

    IRFz44n equivalent

    Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
    Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    1403birfiz44no-220irfz44n equivalent+4datasheet of irfz44nirf1010irfi840girfz44n PDF

    Contextual Info: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    1403birfiz44no-220 PDF

    Contextual Info: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to


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    auirli2505 PDF

    IRF8302M

    Contextual Info: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free  HEXFET Power MOSFET plus Schottky Diode ‚ Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 


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    irf8302mpbfirf8302m PDF