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TE Connectivity KU-5065-2 RELAY GEN PURP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KU-5065-2	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	KU-5065-2					1 $53.09 10 $53.09 100 $43.55 1000 $15.90 10000 $15.90	Buy Now
Sager	KU-5065-2					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies VS-VSKU105/06 SCR Modules Input Modules - AAP DBC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VS-VSKU105/06					1 $52.97 10 $36.11 100 $36.11 1000 $36.11 10000 $36.11	Get Quote
TE Connectivity KU402B1/8 Knobs & Dials KNOB BK W/DIAMOND
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	KU402B1/8					1 - 10 - 100 - 1000 - 10000 $6.14	Get Quote
TE Connectivity KU500B1/8 Knobs & Dials KNOB BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	KU500B1/8					1 - 10 - 100 - 1000 - 10000 $6.13	Get Quote
Shindengen Electronic Manufacturing Co Ltd KU10L08-5063 Sidacs VDRM=63 ITSM=100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	KU10L08-5063					1 - 10 - 100 - 1000 $1.00 10000 $0.92	Get Quote

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KU 506 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Thomson-CSF THYRISTOR tk 1204 Abstract: TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601 Contextual Info: three phase half-controlled metal stacks ponts triphasés mixtes métalliques Vr = Types VRRM m 80 A 400 600 1000 400 600 1000 / 400 600 1000 / / / RG 604 RG 606 RG 610 6xP80 6160 110 220 380 TK 1204 TK 1206 TK 1210 KU 1004 KU 1006 KU 1010 6xP80 6160 110 220	OCR Scan	6xP80 6xP150 Ta601 6xTNF150 6xP150 6xR150 Thomson-CSF THYRISTOR tk 1204 TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601	PDF
0186A Abstract: BROWN BOVERI relay 80VER rxcla RK 418 001-DA relay 12v 200 ohm 40720 001Ka ASEA Brown 004-AA Contextual Info: ABB Relays r Copy to - Kopia till r Form title • Dokumentnamn r Ref MEMO To - Till RLY/F, P, U, Q, K, KA, KB, KU From - Fràn KU RLY/KÜ 521 1 Date - Datum Reg 900621 Dealt with by, telephone - Utfärdare, tfn-nr fC-H Einvall, j21441 Pag£ - Sidnr Cont - Forts	OCR Scan	B03-2031 2M-36 2M-24 004-AA 004-BA 005-AA 005-AA 0186A BROWN BOVERI relay 80VER rxcla RK 418 001-DA relay 12v 200 ohm 40720 001Ka ASEA Brown 004-AA	PDF
Contextual Info: FLM1414-12F - X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: = 5.0dB (Typ.) High PAE: riadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz	OCR Scan	FLM1414-12F FLM1414-12F FCSI0598M200	PDF
Contextual Info: Industrial Automation Company Industrial Devices and Components Division H.Q. Measuring Components Department E5AR/ER Digital Controller DeviceNet Communications OMRON Corporation Shiokoji Horikawa, Shimogyo-ku, Kyoto, 600-8530 Japan Tel: 81 75-344-7080/Fax: (81)75-344-7189	Original	75-344-7080/Fax: NL-2132 2356-81-300/Fax: H124-E1-01 847-843-7900/Fax: Singapo85 omron247	PDF
MH-34B4B Abstract: circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC Contextual Info: VHF/UHF ULTRA-COMPACT DUAL-BAND TRANSCEIVER WITH WIDE BAND COVERAGE OPERATING MANUAL VERTEX STANDARD CO., LTD. 4-8-8 Nakameguro, Meguro-Ku, Tokyo 153-8644, Japan VERTEX STANDARD US Headquarters 10900 Walker Street, Cypress, CA 90630, U.S.A. International Division	Original	0304G-0E MH-34B4B circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC	PDF
NEC k 2134 transistor Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584 Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm	OCR Scan	NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584	PDF
FLM1414-12F Abstract: 3600mA Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1414-12F FLM1414-12F D4888 3600mA	PDF
Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: hadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed	Original	FLM1414-12F FLM1414-12F FCSI0598M200	PDF
Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1414-12F FLM1414-12F	PDF
FLM1414-12F Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1414-12F FLM1414-12F FCSI0598M200	PDF
NE42484C Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	Original	NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking	PDF
NE42484A Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	OCR Scan	NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor	PDF
NE42484C Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	OCR Scan	NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET	PDF
d768 transistor Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent	Original	NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442	PDF

Contextual Info: 4855452 INTERNATIONAL RECTIFIER IQ R 73C Q7194 DJ T - o/ ~ 0 - 3 Data Sheet No. ku-2.142 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 73 D I 4fiSSMS2 D O D ? n 4 R30D & R30DR SERIES 1800 - 1200 VOLTS RANGE 415 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES	OCR Scan	Q7194 R30DR R30DR16A. 07X98	PDF
Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W	Original	FLM1011-4F -46dBc FLM1011-4F FCSI0598M200	PDF
FLM1011-4F Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1011-4F -46dBc FLM1011-4F FCSI0598M200	PDF
FLM8596-12F Contextual Info: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM8596-12F -45dBc FLM8596-12F FCSI0101M200	PDF
FLM8596-12F Contextual Info: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM8596-12F -45dBc FLM8596-12F	PDF
pt 11400 Abstract: FLM1011-4F Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1011-4F -46dBc FLM1011-4F pt 11400	PDF
Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1011-4F -46dBc FLM1011-4F	PDF
TT2140 Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140 Contextual Info: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage	Original	EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140	PDF
FLM8596-12F Abstract: X- Ku-band GaAs FETs Contextual Info: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM8596-12F -45dBc FLM8596-12F X- Ku-band GaAs FETs	PDF
EMM5068 Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages	Original	EMM5068VU 50ohm EMM5068VU EMM5068	PDF

KU 506 Search Results

KU 506 Price and Stock

TE Connectivity KU-5065-2

Vishay Intertechnologies VS-VSKU105/06

TE Connectivity KU402B1/8

TE Connectivity KU500B1/8

Shindengen Electronic Manufacturing Co Ltd KU10L08-5063

KU 506 Datasheets Context Search

Thomson-CSF THYRISTOR tk 1204

0186A

MH-34B4B

NEC k 2134 transistor

FLM1414-12F

FLM1414-12F

NE42484C

NE42484A

NE42484C

d768 transistor

FLM1011-4F

FLM8596-12F

FLM8596-12F

pt 11400

TT2140

FLM8596-12F

EMM5068