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KTC3265
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Galaxy Semi-Conductor Holdings
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NPN Silicon Epitaxial Planar Transistor |
Original |
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194.11KB |
4 |
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KTC3265
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Korea Electronics
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General Purpose Transistor |
Original |
PDF
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71.35KB |
2 |
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KTC3265
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Korea Electronics
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EPITAXIAL PLANAR NPN TRANSISTOR |
Scan |
PDF
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252KB |
2 |
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KTC3265
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Korea Electronics
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General Purpose Transistor |
Scan |
PDF
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301.71KB |
2 |
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KTC3265
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
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92.74KB |
1 |
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KTC3265
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
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34.97KB |
1 |
KTC3265
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package with 30 V collector-emitter voltage, 800 mA collector current, 200 mW power dissipation, and DC current gain ranging from 100 to 320. |
Original |
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KTC3265(RANGE:160-320)
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JCET Group
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NPN transistor in SOT-23 package with 30 V collector-emitter voltage, 800 mA continuous collector current, 100 to 320 DC current gain, and 120 MHz transition frequency. |
Original |
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KTC3265Y
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JCET Group
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NPN transistor in SOT-23 package with 30 V collector-emitter voltage, 800 mA collector current, DC current gain from 100 to 320, and transition frequency of 120 MHz. |
Original |
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KTC3265
