KT 210 Search Results

kd226

Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02
Contextual Info: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on | - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen

AT224

Abstract: mcl T4-6T mcl t1-1t
Contextual Info: RF TRANSFORMERS W 12.5 to 1250 Ω IDEBAND 10 kHz to 1400 MHz SURFACE MOUNT ADT JT/JTX Ω RATIO MODEL NO. A* unl ADT1-1WT* ul ADT1-6T* ull ADT1.5-1* ADT2-1T* TCM T-KK81 FREQUENCY MHz Note D TX INSERTION LOSS R TC 3 dB MHz 2 dB MHz 1 dB MHz Note B C O N N

2N5508

Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

K1502

Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

74153 mux

Abstract: MUX 74157 74174 shift register 74157 mux mux 74153 74LS152 CI 74151 D flip-flop 74175 pin 74152 mux 74157
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL - T T L D154 54/74170, 54LS/74LS170, 54LS/74LS670 15 H 1 2 3 12 11 10 I M Ew Ü2 Dl D3 loa I la 1 3 - W b 1 3 - So 5 - Ra 3 - S i 6 6 o o o ec UJ 7 N 14 15 2 2 3 3 4 5 6 lo 11 l2 l3 CP 1 9

foxconn ls 36 motherboard manual

Abstract: foxconn LS 36 manual foxconn LS 36 front panel pinout C9045 motor foxconn LS 36 user manual motor c9045 C7L3 fr3704 foxconn LS 36 IC R2A3 FREE
Contextual Info: Intel 875P MCH with Intel® 6300ESB ICH Chipset Development Kit Developer’s Manual February 2004 Order Number: 301061 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

2SC1502

Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
Contextual Info: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity

52642

Contextual Info: Ordering number:EN5264 FX203 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2121 [FX203] Switching Time Test CIrcuit 1:No Contact

L04A

Abstract: 2SK529
Contextual Info: 2SK529 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0s.e±ae FEATURES: . High Breakdown Voltage : V(gR)0gg=45OV

6H3n triode

Abstract: 6h3n
Contextual Info: 6H3n A b OHHOH TpHOÆ Double triode Æ b o h h o h t p h o ä 6 H 3 I1 npeÄ H a3H aneH ä jih ycH- jieHHH H an p H ^ ieH H H h reH epH pO B aH H H m n e ó a H H H HH3KOH MaCTOTbl. H H 3 K 0 q acT 0 T H b ie ÄBOHHbie TpHOAbi 6H3I1 b h nyCKaiOTCH B MHHHaTIOpHOM 0 J 0pM ^eH H H , B CTeKJIHHHOM Ô ajIJIO H e C ÄeBHTHIUTbipbKOBOH HOJKKOH,

Contextual Info: Ordering number:EN4632 FP401 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Very high-speed switching. · Composite type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting.

D863F

Abstract: KD 502 decimal-to-hex 021F M68HC11K4 AN1215 M68HC11 MC68HC11K4 MC68HC11N4 "saturation arithmetic"
Contextual Info: MOTOROLA Order this document by: A N 1 2 1 5 / D SEMICONDUCTOR APPLICATION NOTE PID Routines for MC68HC11K4 and MC68HC11N4 Microcontrollers By James W. Gray INTRODUCTION PID proportional, integral, derivative compensation is one of the most common forms of closed-loop control. Control of closed-loop systems that require compensation is a growing area of application for embedded microprocessors. In these systems, analog signals must be converted into discrete digital samples

Contextual Info: UCC28061 UCC2 8060 www.ti.com . SLUS837A – JUNE 2008 – REVISED JULY 2009 Natural Interleaving Transition-Mode PFC Controller With Improved Audible Noise

SHL 7008

Abstract: PW26 SW02 R0R5-02-03 PW23 FJDL9092-01 ML9092-01 ML9092-01TB ML9092-02TB ML9092-03TB
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

2SA1883

Abstract: 2SC4987 marking ha 4660A
Contextual Info: Ordering number:4660A PNP Epitaxial Planar Silicon Transistor 2SA1883 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturatio voltage. · High gain-bandwidth product. · Small collector capacitance.

Contextual Info: Data Sheet WHITE LED STEP-UP CONVERTER AP3019A General Description Features The AP3019A is an inductor-based DC/DC converter designed to drive up to five white LEDs in series for backlight. Only one feedback resistor is needed to control the LED current and obtain required

Q67060-S7301-A2

Contextual Info: BSP 762 T Preliminary data Smart Power High-Side-Switch Features Product Summary • Overload protection Overvoltage protection ^bb AZ • Current limitation Operating voltage ^bb(on) • Short circuit protection On-state resistance f ì ON • Thermal shutdown with restart

UC66

Abstract: ulc xc3030 CERAMIC QUAD FLATPACK CQFP UC22 XC4000 UC0844
Contextual Info: UC Series Matra MHS Universal Logic Circuits Description The UC series of ULCts is well suited for converting medium- to large-sized CPLDs and FPGAs. Devices are implemented in high-performance CMOS technology with 0.85-mm drawn channel lengths, and are capable

philips 3f3 ferrite

Abstract: smps 12 volt 3 amp T2A250V 12v 1a smps circuit diagram L4990 Z8070 BJT 2N2222 datasheet BYT11-600 l4990a schematic smps 300W
Contextual Info: L4990 L4990A PRIMARY CONTROLLER CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE FOR POWER MOSFET 1A FULLY LATCHED PWM LOGIC WITH DOUBLE PULSE SUPPRESSION PROGRAMMABLE DUTY CYCLE 100% AND 50% MAXIMUM DUTY CYCLE

Contextual Info: Preliminary Datasheet WHITE LED STEP-UP CONVERTER AP3029 General Description Features The AP3029 is an inductor-based DC/DC converter designed to drive up to six white LEDs in series or 2 rows of LEDs with 5 for each in parallel for backlight. Only one feedback resistor is needed to control the

Contextual Info: Preliminary Datasheet WHITE LED STEP-UP CONVERTER AP3031 General Description Features The AP3031 is an inductor-based DC/DC boost converter designed to drive LED arrays. 1.4A switching current allows AP3031 to be used in different 7' to 10' LCD panel backlights 3*13 LED arrays typically .

LA5667

Contextual Info: Ordering number:ENN2300A Monolithic Linear IC LA5667 Multifunction Multiple Voltage Regulator Overview Package Dimensions • Especially suited for use in micorcomputer-controlled tuners, receivers, preamplifiers and the like. unit:mm 3075-SIP7H [LA5667] Features

2sd1620

Contextual Info: Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE sat , NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown