KSD 120 Search Results

KSB744

Abstract: KSB744A
Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A A BSOLUTE M AXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol -70 V C ollector E m itter Voltage : KSB744 : KSB744A

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol -70 V C ollector Em itter Voltage : KSB744 V cE O -45

ksd transistor

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol -70 V C ollector Em itter Voltage : KSB744

Contextual Info: 어 SM2332 Semiconductor Chip LED Features • Colorless transparency lens type • Compact type • Radiation size 2.9mm L x1.6mm(W) surface mount type Outline Dimensions unit : mm 3 1 2 PIN Connections 1. Anode 2. NC 3. Cathode KSD-O8P003-001 1 SM2332 Absolute Maximum Ratings

Contextual Info: KSB1097 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSD 1588 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic V cbO Sym bol - 80 V C ollecto r E m itter Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB811 AUDIO FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSD 1021 • C ollector C urrent: lc= -1A • C ollector D issipation: Pc=350m W ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB810 AUDIO FREQUENCY AMPLIFIER TO -92S • C om plem ent to KSD 1020 ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent (DC)

ksd 150 full safe

Abstract: K*D1691 ksd 75
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS TO-22QF • C om plem ent to KSD 1408 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic V cbO Sym bol - 80 V C ollecto r E m itter Voltage VcEO - 80 V Em itter Base Voltage

Contextual Info: SAM1615 Dual Color Chip LED Features • 1.6mm L x1.5mm(W) ×0.55mm(H) surface mount type • Compact type • Dual color chip LED Outline Dimensions unit : mm PIN Connections 1. Anode (Y-Green) 2. Anode (Amber) 3. Cathode(Amber) 4. Cathode(Y-Green) KSD-O8H001-001

Contextual Info: SYM1615 Dual Color Chip LED Features • 1.6mm L x1.5mm(W) ×0.55mm(H) surface mount type • Compact type • Dual color chip LED Outline Dimensions unit : mm PIN Connections 1. Anode (Y-Green) 2. Anode (Yellow) 3. Cathode(Yellow) 4. Cathode(Y-Green) KSD-O8H002-001

Contextual Info: SAM1615 Semiconductor Dual Color Chip LED Features • 1.6mm L x1.5mm(W) ×0.55mm(H) surface mount type • Compact type • Dual color chip LED Outline Dimensions unit : mm PIN Connections 1. Anode (Y-Green) 2. Anode (Amber) 3. Common Cathode KSD-O8H001-000

ksd 150 full safe

Abstract: KSB1151
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSB1116

Abstract: TRANSISTOR 1616 ac
Contextual Info: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB906 LOW FREQUENCY POWER AMPLIFIER • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSD 1221 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol - 60 V C ollecto r E m itter Voltage

ksd 150 full safe

Abstract: KSB1151 ksd 75
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSB1017

Abstract: KSD1408
Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -2 2 0 F • Com plem ent to KSD 1408 ABSO LU TE MAXIMUM RATINGS Rating Unit Collector B ase Voltage Characteristic V cbO Symbol - 80 V Collector Emitter Voltage V cE O - 80 V Emitter Base Voltage

SD1616A

Abstract: 1616A KSD1616 KSD1616A
Contextual Info: FOI KSD 1616/1616A NPN E pitaxial Silicon Transistors Semiconductor AUDIO F R E Q U E N C Y POW ER AM PLIFIER M EDIUM S P E E D SW ITCHING • T O -9 2 Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 T: > C h a r a c te r is tic Collector-base Voltage :KSD1616

FCT573T

Abstract: 73ct
Contextual Info: CY54/74FCT373T CY54/74FCT573T 8-Bit Latches CYPRESS Features • KSD > 20<>0V • fu n ctio n , pinout and drive com patible with the fa stest bipolar logic • Fully com patible with TTL input and output logic levels • FCT-C speed at 4.2 n s m ax. Com ’l

Contextual Info: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage

Contextual Info: SDB10100PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features „ Low forward voltage drop and leakage current „ Low power loss and High efficiency „ High surge capability „ Dual common cathode rectifier „ Full lead-free Pb component and RoHS compliant device

tip32C samsung

Abstract: KSB595 BD241A BD241B BD242A KSB834 KSC1983 KSD880 TIP31A TIP31B
Contextual Info: SAMSUNG ELECTRONICS INC bOE T> • TTbMlME GG11S33 T3T « S U G K TRANSISTORS FUNCTION GUIDE 2.1.5 TO-220 Type Transistors lc Device Type Veto A (V) 3 60 5 7 Condition MIN MAX TIP32A 4 3 10 50 3 0.375 K SD 8 8 0 KSB834 5 0.5 60 200 3 0.3 4 0.5 500 2 0.05

SDB10100PI

Contextual Info: SDB10100PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features y Low forward voltage drop and leakage current y Low power loss and High efficiency y High surge capability y Dual common cathode rectifier y Full lead-free Pb component and RoHS compliant device

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715