KRT 30 Search Results

receiver krt 30

Abstract: KRT 30 KIP-M1M krt 40 TO can
Contextual Info: Optical Monitoring Photodiode TO CAN for KRT-11XSx4N KRT-11XSx4N Description KRT-11XSx4N is InGaAs PIN Photodiode TO CAN package with BIG size PD active diameter Ø1.0 , Ø2.0 , Ø3.0mm It is recommended for Laser diode life test and optical power monitoring.

receiver krt 30

Abstract: KRT 30 IR receiver Korea KRT-14211C
Contextual Info: 2.5G InGaAs PIN PD for TO 46 PKG KRT-14211C Description KRT-14211C are InGaAs PIN photo diodes with various diameter options of active area. KRT-14211C are packaged in industry standard TO-46 stem with long ball lens cap. They are recommended for digital optical communications.

CN1E2KRT

Contextual Info: resistors CN-KRT anti sulfuration chip networks convex termination EU features • Excellent anti-sulfuration characteristic due to using high sulfuration-proof inner top electrode material • More advancement in the mounting density than individual chip resistors

Contextual Info: resistors CN-KRT anti sulfuration chip networks convex termination EU features • Excellent anti-sulfuration characteristic due to using high sulfuration-proof inner top electrode material • More advancement in the mounting density than individual chip resistors

TD715

Abstract: din 41622 240v automatic change over switch circuit diagram tr-60228 85122 LED wiring diagram for a 240v ac to 12v dc transformer TR551 OMRON 250v relay ac 11 pin 12v relay 8 pin 51568
Contextual Info: Macromatic Controls W134 N5345 Campbell Drive, Menomonee Falls, WI 53051 800.238.7474 262.781.3366 FAX: 262.781.4433 sales@macromatic.com www.macromatic.com At right - photo of Amarex KRT Pump courtesy of KSB Pumps Inc., Canada Industrial Control & Monitoring Products

Contextual Info: resistors CN-KRT anti sulfuration chip networks convex termination EU features • Excellent anti-sulfuration characteristic due to using high sulfuration-proof inner top electrode material • More advancement in the mounting density than individual chip resistors

CN1E2

Abstract: CN1E2KRT
Contextual Info: resistors CN-KRT anti sulfuration chip networks convex termination EU features • Excellent anti-sulfuration characteristic due to using high sulfuration-proof inner top electrode material • More advancement in the mounting density than individual chip resistors

CN1E2KRT

Contextual Info: resistors CN-KRT anti sulfuration chip networks convex termination EU features • Excellent anti-sulfuration characteristic due to using high sulfuration-proof inner top electrode material • More advancement in the mounting density than individual chip resistors

CN1E2KRT

Contextual Info: resistors CN-KRT anti sulfuration chip networks convex termination EU features • Excellent anti-sulfuration characteristic due to using high sulfuration-proof inner top electrode material • More advancement in the mounting density than individual chip resistors

j5021

Contextual Info: Polymer PTC Resettable Fuse: KRT Series Radial Lead Type for Telecom Applications Features 1. RoHS compliant and halogen-free 2. Current ratings from 0.08 A to 0.40A 3. High operating voltage rating :100Vdc/250Vdc 4. Resettable for over-current protection

e5kk

Contextual Info: 2DI3OZ-1OO 30a : O utline Draw ings POWER TRANSISTOR MODULE F e a tu re s • «¡W/± High Voltage • 7 U— ') > * f f • i ' t — Krt/Si Including Free Wheeling Diode • ASO A'"/a V-' Excellent Safe Operating Area • M i WM Insulated Type LAMPNo 10

j5021

Contextual Info: Polymer PTC Resettable Fuse: KRT Series Radial Lead Type For Telecom Applications Features 1. RoHS & Halogen-Free HF compliant 2. Hold current ratings from 0.08 A to 0.18A 3. High operating voltage rating :100Vdc/250Vdc 4. Resettable for over-current protection

ABE 444

Abstract: n408 BA408 A96J 31A7
Contextual Info: ;~< @JTNJU \4JFVWTJU r@Md~ PU_\XMe 5 ,444 r6a`[ LQ^[ RaZO`U[Z MZP =[XP RaZO`U[Z r2EQSYQZ` ?:9 9U_\XMe r8M_Q _UfQ Ne 9>A _\QOURUOM`U[Z p >OJFUJ TJFI q1FWVNRQ KRT [RWT UFKJV[q NQ RSJTFVNRQ PFQWFO GJKRTJ WUNQLx \=TIJTNQL NQKRTPFVNRQ o BA QKHO ICOCM 2 BA ?ILCMC ICOCM

Contextual Info: CHIP NETWORKS ANTI SULFURATION CN-KRT EU RoHS 耐硫化チップネットワーク （凸タイプ） Anti Sulfuration Chip Networks (Convex Termination) •構造図 Construction ② ① ③ ④ 外装色：黒 Coating color：Black ■特長 Features

Contextual Info: CHIP NETWORKS ANTI SULFURATION CN-KRT EU RoHS 耐硫化チップネットワーク（凸タイプ） Anti Sulfuration Chip Networks (Convex Termination) •構造図 Construction ② ① ③ ④ 外装色：黒 Coating color：Black ■特長 Features

CN1E2KRT

Contextual Info: CHIP NETWORKS ANTI SULFURATION CN-KRT EU RoHS 耐硫化チップネットワーク（凸タイプ） Anti Sulfuration Chip Networks (Convex Termination) •構造図 Construction ② ① ③ ④ 外装色：黒 Coating color：Black ■特長 Features

6DI30A-120

Abstract: transistor 3Ft transistor and schematic symbols M606 fuji bjt
Contextual Info: 6DI30A-120 FUJI BTD8DE 6-Pack BJT 1200 V 30 A • Outline Drawings POWER TRANSISTOR MODULE I «.I « ^ Features • SW /± EU 0V EV BWEW fïi * EX High Voltage • 7»j — y Krt / f t A C Motor Controls . Air Conditionens t #*14 • Maximum Ratings and Characteristics

Contextual Info: CHIP NETWORKS ANTI SULFURATION CN-KRT EU RoHS 耐硫化チップネットワーク（凸タイプ） Anti Sulfuration Chip Networks (Convex Termination) •構造図 Construction ② ① ③ ④ 外装色：黒 Coating color：Black ■特長 Features

FUJI 1DI 300

Abstract: 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt
Contextual Info: _ _ - _ 1-Pack BJT I D I 3 Z - 1 • » * ! Outline Drawings 7 - | a « 13^ 21 29 8 8 16 nr POWER TRANSISTOR MODULE : Features • ¡S ii/± High Voltage • y ij — «J ;j- KrtîSc Including Free Wheeling Diode • ASO ^ S i ' Excellent Safe Operating Area

AFAA TRANSISTOR

Abstract: sew motor 41G1 LB-20G HM 1211 B371
Contextual Info: 2DI3OZ-12O 30a POWER TRANSISTOR MODULE • 4 * * : F e atu res • ¡ftffii/E Hi gh Vol t age • 7 l) ij V • A S O jW S v,' • t ë fâ M * - KrtîK I ncl udi ng Free W h e e lin g D iode E xcelle nt Safe O p e ra tin g Area Insulated Type : Applications

Contextual Info: D 1 I O 3 O Z - 1 2 O 3 a )V ^<7 — : Outline Drawings P O W ER TRA N SISTO R MODULE : Features • SBfiJGE High Voltage • 7 'J — 'J V • ASO Jb'"J2iL' -f Krt/BE Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lica tio n s

fuji 2DI 50Z-120

Abstract: cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V
Contextual Info: 20/ 50Z-120 FU JI ET030E 2-Pack BJT 1200 V 50 A ✓ < 7 — POW ER TR A N S ISTO R M O D ULE ' Features • iS it/± • 7 U— High Voltage lJ — Krt/R Including Free Wheeling Diode • ASO i ? & \ s Excellent Safe Operating Area • t&W iM Insulated Type

B68 zener diode

Abstract: 1B2 zener diode diode zener 600v 1a M114 T151 T810 T930
Contextual Info: 1 D I 3 0 0 M P - 0 5 0 3 0 0 A /< 7 - : Outline Drawings ii I- ai -J1J0-, h POWER TRANSISTOR MODULE : Features • h FE ^ S u • High DC Current Gain Krtî» : Applications • ^ General Purpose Inverter • Uninterruptible Power Supply • N C l f S e r v o & Spindle Drive for NC Machine Tools

6di15a-050

Abstract: power bjt transistor 600v 6DI15A-050 equivalent transistor fuji bjt 6-pack 1B2 diode
Contextual Info: FU JI 6 s u s s n a ie D I 1 5 A - 0 5 6-Pack BJT 600 V 15 A l £ f • Outline D rawings POWER TRANSISTOR MODULE F e a tu re s • U — ;fr-f "7 > • '$ . * ? 4 # — • h F E ^ 'iS l' • Krt/8 In c lu d in g Free W h e e lin g D iode H igh DC C urrent Gain