KP-4 200-145 D J Search Results

KP-4 200-145 d J

Contextual Info: TYPE FILM-FOIL CAPACITORS # 5689 KP-4 200-145 d J 33 > 10 48 ø 1.2 35 + 1 20 + 1 Polypropylene dielectric Plastic sleeve / Epoxy resin sealing Paramètre Capacitance Tolérance Rated voltage Rated voltage Repetitive surge current RMS Current Tangente delta

75343p

Abstract: 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343
Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

TB334

Abstract: 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST
Contextual Info: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S

75343P

Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76437S

Abstract: HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 189E1
Contextual Info: HUFA76437P3, HUFA76437S3S Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S

76437S

Abstract: HUF76437P3 HUF76437S3S HUF76437S3ST TB334
Contextual Info: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 37P Packaging JEDEC TO-220AB SOURCE DRAIN GATE UF76 7S3 bjec 4A, V, 17 m, JEDEC TO-263AB GATE SOURCE DRAIN FLANGE

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

65e9

Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

75631P

Abstract: 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3S TM Data Sheet July 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET File Number 4720.2 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3S Features

irf540n

Abstract: MOSFET IRF540n IRF540NT
Contextual Info: IRF540N Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title F54 bt A, 0V, 40 m, Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models

76633s

Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S

Contextual Info: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

75637S

Abstract: HUFA75637P3 HUFA75637S3S HUFA75637S3ST TB334 65e9 320E3
Contextual Info: HUFA75637P3, HUFA75637S3S Data Sheet November 2000 File Number 4960 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75637P3 HUFA75637S3S

75645p

Abstract: 75645S mosfet 75645p HUF75645P3 AN9321 HUF75645S3S HUF75645S3ST TB334
Contextual Info: HUF75645P3, HUF75645S3S Data Sheet July 1999 File Number 4722.1 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75645P3 HUF75645S3S • Ultra Low On-Resistance

76439s

Abstract: 6439P HUF76439P3 HUF76439S3S HUF76439S3ST TB334
Contextual Info: HUF76439P3, HUF76439S3S Data Sheet October 1999 File Number 4674.1 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET [ /Title Packaging Features HUF7 JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance 6439P - rDS(ON = 0.012Ω, VGS = 10V

75631P

Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE

75631p

Abstract: 75631 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST Data Sheet August 2000 File Number 4720.3 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features

irf540n

Abstract: MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF540N • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

IRFP150N

Abstract: 65e9 65E8 AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

76633S

Abstract: HUFA76633P3 HUFA76633S3S HUFA76633S3ST TB334
Contextual Info: HUFA76633P3, HUFA76633S3S Data Sheet November 2000 File Number 4991 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76633P3 HUFA76633S3S

76633S

Abstract: 76633P HUF76633P3 HUF76633S3S HUF76633S3ST TB334
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 33P Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE UF76 3S3 bjec 8A, 0V, 36 m, JEDEC TO-263AB GATE

Contextual Info: HUFA75645P3, HUFA75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75645P3 HUFA75645S3S • Ultra Low On-Resistance

Contextual Info: HUF75345G3, HUF75345P3, HUF75345S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3S Semiconductor Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,