KP 100A Search Results

KP 100A Result Highlights (5)

Part	Manufacturer	Description	Download
62684-402100ALF	Amphenol Communications Solutions	0.50mm Flex Connector, OPU Series, 40 Position , Side Entry, Upper Side Contact, Surface Mount, ZIF	PDF
62684-502100ALF	Amphenol Communications Solutions	0.50mm Flex Connector, OPU Series, 50 Position , Side Entry, Upper Side Contact, Surface Mount, ZIF	PDF
62684-501100AHLF	Amphenol Communications Solutions	0.50mm Flex Connector, OPU Series, 50 Position , Side Entry, Lower Side Contact, Surface Mount, ZIF, Halogen free	PDF
HM2R95PA8100AALF	Amphenol Communications Solutions	Back Plane Connectors, 2mm Hard Metric Series, Millipacs, Right Angle Receptacle,Type DE 25,Press Fit Tail,200 Signal Pin, and ROHS Compliant	PDF
U91D121100A31	Amphenol Communications Solutions	CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT	PDF

KP 100A Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
5KP100A	SUNMATE electronic Co., LTD	Axial leaded transient voltage suppressor diode with 5000W peak pulse power, 5.0 to 190V breakdown voltage range, available in uni- and bi-directional versions, housed in a JEDEC R-6 molded plastic case.Axial leaded transient voltage suppressor diode with 5000W peak pulse power, 5.0 to 190V breakdown voltage range, available in uni- and bi-directional versions, housed in a JEDEC R-6 molded plastic case.Axial leaded transient voltage suppressor diode with 5000W peak pulse power, 5.0 to 190V breakdown voltage range, available in uni- and bi-directional versions, housed in a JEDEC R-6 molded plastic case.Axial leaded transient voltage suppressor diode with 5000W peak pulse power, 5.0 to 190V breakdown voltage range, available in uni- and bi-directional versions, housed in a JEDEC R-6 molded plastic case.Axial leaded transient voltage suppressor diode with 5000W peak pulse power, 5.0 to 190V breakdown voltage range, available in uni- and bi-directional versions, housed in a JEDEC R-6 molded plastic case.Axial leaded transient voltage suppressor diodes in JEDEC R-6 molded plastic package, available in uni- and bi-directional versions, with 5000W peak pulse power, operating voltage range 5.0 to 190V, fast response, and UL 94V-0 rated flammability.Axial leaded transient voltage suppressor diodes in JEDEC R-6 molded plastic package, available in uni- and bi-directional versions, with 5000W peak pulse power rating, fast response time, and operating temperature from -55 to +175°C.	Original	PDF
5KP100A	AK Semiconductor	5KP5.0A(CA) through 5KP220A(CA) R-6 transient voltage suppressor with 5000W peak pulse power, 5.0V to 220V working peak reverse voltage, glass passivated chip, and R-6 package.	Original	PDF
5KP100A	Jiangsu JieJie Microelectronics Co Ltd	5KP Series 5000W transient voltage suppressors offer uni/bi-directional protection from 5.0V to 250V with low clamping voltage, 10/1000μs pulse rating, and plastic package rated 94V-0.5KP Series 5000W transient voltage suppressors provide uni/bi-directional protection with a 10/1000μs pulse rating, low clamping voltage, and stand-off voltages from 5V to 250V, suitable for AC line and high-power DC bus applications.5KP Series 5000W transient voltage suppressor for high current uni/bi-directional protection, with stand-off voltages from 5V to 250V, low clamping voltage, and 10/1000μs pulse waveform rating.5KP Series 5000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 5V to 250V, low clamping voltage, and 10/1000μs pulse rating.5000W 5KP series transient voltage suppressors offer uni/bi-directional protection with a 10/1000μs pulse rating, low clamping voltage, and stand-off voltages from 5V to 250V, suitable for AC line and high-power DC bus applications.5000W Transient Voltage Suppressor in R-6 package with 10/1000μs pulse rating, available in unidirectional and bidirectional types, offering clamping voltages from 5.0V to 250V and low leakage current.5KP Series 5000W transient voltage suppressors offer uni/bi-directional protection from 5.0V to 250V with low clamping voltage, 10/1000μs pulse rating, and plastic package rated 94V-0.5KP Series 5000W transient voltage suppressors provide uni/bi-directional protection with a 5.0V to 250V range, 10/1000μs pulse rating, low clamping voltage, and high surge current capability, suitable for AC line and high-power DC bus applications.5KP Series 5000W transient voltage suppressor for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 5V to 250V, offering low clamping voltage and high surge current capability.5000W transient voltage suppressor available in unidirectional and bidirectional types with standoff voltages from 5V to 250V, designed for AC line protection and high power DC bus clamping applications.	Original	PDF
5KP100A	Microdiode Semiconductor	Breakdown voltage 5.0-250V, peak pulse power 5000W, response <1.0ps unidirectional, 5.0ns bidirectional, soldering 265°C/10S/9.5mm.	Original	PDF
3KP100A	SUNMATE electronic Co., LTD	Axial leaded transient voltage suppressor with 3000W peak pulse power, 5.0 to 190V voltage range, fast response time, and JEDEC R-6 molded plastic case for uni- and bi-directional versions.	Original	PDF
15KP100A	SUNMATE electronic Co., LTD	15KP12A(CA) to 15KP240A(CA) axial lead transient voltage suppressor diodes feature 15000W peak pulse power, 12 to 240V breakdown voltage range, glass passivated junction, and low incremental surge resistance with fast response time.Axial lead transient voltage suppressor diode with 15000W peak pulse power, 12-240V voltage range, glass passivated junction, and 55 to +150°C operating temperature, available in unidirectional and bidirectional types with 5% or 10% tolerance.Axial lead transient voltage suppressor diode with 15000W peak pulse power, 12 to 240V breakdown voltage range, glass passivated junction, and low incremental surge resistance for reliable overvoltage protection.Axial lead transient voltage suppressor diode with 15000W peak pulse power, 12 to 240V breakdown voltage range, glass passivated junction, and operating temperature from -55 to +150°C.Axial lead transient voltage suppressor diode with 15000W peak pulse power capability, 12 to 240V voltage range, glass passivated junction, and low incremental surge resistance, designed for high-temperature soldering with JEDEC R-6 molded plastic case.Axial lead transient voltage suppressor diode with 15000W peak pulse power, 12-240V voltage range, glass passivated junction, and 55 to +150°C operating temperature, available in unidirectional and bidirectional types.	Original	PDF
15KP100A	Jiangsu JieJie Microelectronics Co Ltd	15KP Series 15000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with standoff voltages from 17V to 280V, offering low surge resistance and fast response.15KP Series 15000W transient voltage suppressor for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 17V to 280V, offering low clamping voltage and high surge current capability.15KP Series 15000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 17V to 280V, offering low surge resistance and fast response.15KP Series 15000W transient voltage suppressor for AC line protection and high-power DC bus clamping, available in uni/bi-directional types with stand-off voltages from 17V to 280V, offering low clamping voltage and high surge current capability.15KP Series 15000W transient voltage suppressors for AC line protection and high-power DC bus clamping, available in unidirectional and bidirectional types with stand-off voltages from 17V to 280V, offering low clamping voltage and high surge current capability.15KP Series 15000W Transient Voltage Suppressor for A.C. line protection and high power DC bus clamping, with unidirectional and bidirectional options from 17V to 280V, low clamping voltage, and 10/1000μs pulse rating.	Original	PDF
10KP100A	SUNMATE electronic Co., LTD	10KP series axial leaded transient voltage suppressor diodes offer 10000W peak pulse power capability on a 10/1000 us waveform, with reverse standoff voltages from 17V to 280V, low clamping voltage, and fast response time, housed in an R-6 package.10KP17A(CA) to 10KP280A(CA) axial leaded transient voltage suppressor diodes offer 10000W peak pulse power handling, 17-280V breakdown voltage range, fast response under 1ps, low surge resistance, and high temperature soldering capability in R-6 package.Axial leaded transient voltage suppressor diode with 10000W peak pulse power, 17-280V breakdown voltage range, glass passivated junction, and fast response time under 1 ps.10KP17A(CA) to 10KP280A(CA) axial leaded transient voltage suppressor diodes offer 10000W peak pulse power capability, 17-280V reverse standoff voltage range, glass passivated junction, and fast response time with low surge resistance.10KP17A(CA) to 10KP280A(CA) axial leaded transient voltage suppressor diodes offer 10000W peak pulse power handling, 17-280V working voltage range, fast response time under 1.0 ps, low surge resistance, and high temperature soldering capability in R-6 package.10KP17A(CA) to 10KP280A(CA) axial leaded transient voltage suppressor diodes offer 10000W peak pulse power handling, 17-280V reverse standoff voltage range, fast response time under 1.0 ps, low incremental surge resistance, and high temperature soldering capability in R-6 package.10KP17A(CA) to 10KP280A(CA) axial leaded transient voltage suppressor diodes offer 10000W peak pulse power handling, 17-280V working voltage range, fast response time under 1.0 ps, low surge resistance, and high temperature soldering capability in R-6 package.	Original	PDF

KP 100A Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Semiconductors 5KP100A-E3-54 TVS DIODE 100VWM 162VC P600
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	5KP100A-E3-54	Cut Tape	7,408		1	1 $1.35 10 $1.28 100 $1.28 1000 $1.28 10000 $1.28	Buy Now
	5KP100A-E3-54	Tape & Reel	7,200		800	1 - 10 - 100 - 1000 $1.03 10000 $0.99	Buy Now
Diotec Semiconductor AG 5KP100A TVS DIODE 100VWM 162VC P600
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	5KP100A	Cut Tape	894		1	1 $1.46 10 $0.92 100 $0.61 1000 $0.61 10000 $0.61	Buy Now
	5KP100A	Ammo Pack	840		500	1 - 10 - 100 - 1000 $0.44 10000 $0.36	Buy Now
Mouser Electronics ()	5KP100A					1 $1.46 10 $0.92 100 $0.61 1000 $0.39 10000 $0.33	Get Quote
	5KP100A					1 $1.46 10 $0.92 100 $0.61 1000 $0.39 10000 $0.33	Get Quote
TME	5KP100A		567		1	1 $0.90 10 $0.59 100 $0.41 1000 $0.37 10000 $0.37	Buy Now
YAGEO Corporation 5KP100A-B TVS DIODE 100VWM 162VC P600
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	5KP100A-B	Cut Tape	890		1	1 $2.65 10 $1.71 100 $1.18 1000 $1.18 10000 $1.18	Buy Now
	5KP100A-B	Ammo Pack	600		300	1 - 10 - 100 - 1000 $0.88 10000 $0.81	Buy Now
Microchip Technology Inc M5KP100A TVS DIODE 100VWM 162VC DO204AR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M5KP100A	Bulk	125		1	1 $6.39 10 $6.39 100 $5.93 1000 $5.93 10000 $5.93	Buy Now
Avnet Americas	M5KP100A	Tape & Reel		42 Weeks	200	1 - 10 - 100 - 1000 $5.29 10000 $5.20	Buy Now
Newark	M5KP100A	Bulk			200	1 - 10 - 100 $5.93 1000 $5.70 10000 $5.70	Buy Now
Microchip Technology Inc	M5KP100A					1 $6.39 10 $6.39 100 $5.93 1000 $5.38 10000 $5.38	Buy Now
NexGen Digital	M5KP100A		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Master Electronics	M5KP100A					1 - 10 - 100 $6.84 1000 $6.26 10000 $6.26	Buy Now
Microchip Technology Inc M15KP100A TVS DIODE 100VWM 162VC DO204AR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M15KP100A	Bulk			100	1 - 10 - 100 $21.87 1000 $21.87 10000 $21.87	Buy Now
Avnet Americas	M15KP100A	Tape & Reel		42 Weeks	100	1 - 10 - 100 $21.04 1000 $20.03 10000 $19.69	Buy Now
Newark	M15KP100A	Bulk			100	1 - 10 - 100 $21.87 1000 $21.03 10000 $21.03	Buy Now
Microchip Technology Inc	M15KP100A					1 $23.56 10 $23.56 100 $21.87 1000 $19.86 10000 $19.86	Buy Now
Master Electronics	M15KP100A					1 - 10 - 100 $20.89 1000 $20.89 10000 $20.89	Buy Now

Find more KP 100A price and stock on Findchips.com

KP 100A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PFZD 36 Abstract: BZW04-55 BZW04-6V0 p6ke 528 BZW06-154 BZW07-27B BZW04-105 TVS 33A BZW50-33 BZW04-6V6 Contextual Info: cross reference «i liste d'é qu iva le nce THOMSON-CSF Comp, type n° THOMSON-CSF type Camp, type n° THOMSON-CSF type Comp, type n ' THOMSON-CSF type P6KE P6KE P6KE P6KE P6KE BZW06-136 BZW06-145 BZW06-154 BZW06-171 BZW06-5V8B TVS 528 TZB 6,8A TZB 7,5A	OCR Scan	BZW06-136 BZW06-28 BZW04-97 BZW06-145 BZW04-5V5 BZW04-105 BZW06-154 BZW04-6V0 BZW04-121 P6KE200A PFZD 36 BZW04-55 p6ke 528 BZW07-27B BZW04-105 TVS 33A BZW50-33 BZW04-6V6	PDF
TGS 822 Contextual Info: < 8$+5 &#6# 27/2 9+6* +06' 4#6'& # ' 241&7%6 52'%+(+%#6+10 25/1& <K.1) 914.&9+&' '#&37#46'45 ' #/+.610 #8'07' %#/2$'. %# 6'.'210' (#: +06'40'6 662999<+.1)%1/ 1999 by ZiLOG, Inc. All rights reserved. Information in this publication concerning the devices, applications, or technology described is intended to suggest possible uses and may be superseded. ZiLOG, INC.	Original	Z02201 82NCUVKE R4078, TGS 822	PDF
diode ry 10 A Contextual Info: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾	Original	FTU03N25E O-251IPAK diode ry 10 A	PDF
marking SH SOT23 mosfet Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5 Contextual Info: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501	Original	DMN5501/DMZ5501 200mA DMN5501 DMZ5501 OT-23 74tten marking SH SOT23 mosfet DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5	PDF
ftu02p Contextual Info: FTU02P25E 250V P-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID -250V 3.7Ω -2.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾	Original	FTU02P25E -250V O-251IPAK ftu02p	PDF
p-channel 250V 30A power mosfet Abstract: PN channel MOSFET 10A AK2501E Contextual Info: AK2501E 250V N-Channel + P-Channel ESD-Protected MOSFET General Features t ESD Improved Capability Low ON Resistance Fast Switching RoHS Compliant/Lead Free Small Surface Mount Package SOP8 ee ¾ ¾ ¾ ¾ ¾ Applications High Efficiency SMPS DC/DC Converter	Original	AK2501E p-channel 250V 30A power mosfet PN channel MOSFET 10A AK2501E	PDF
B6U100 Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD B6U 100 N 10.16.R ECONO 80 104,8 80 70,4 60,96 15,24 N- 5,5 P+ R NS P+ T 3,81 11,43 57,15 93±0,2 max. 107,5 P+ 13 R 1-4 S 5-8 T 9-12 P+ 16 N- 14 N- 17 VWK Sep. 1996	Original		PDF
75307D Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 75307D	PDF
Contextual Info: HUF75333G3, HUF75333P3, HUF75333S3S Semiconductor Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75333G3, HUF75333P3, HUF75333S3S HUF75333	PDF
IRF630N Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3 Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models	Original	IRF630N O-220 100oC, IRF630N TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3	PDF
Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3S Semiconductor Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75332G3, HUF75332P3, HUF75332S3S 58e-2 HUF75332 00e-3 50e-3 85e-2	PDF
IRF530N Abstract: AN7254 AN7260 AN9321 AN9322 TB334 Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER	Original	IRF530N O-220AB IRF530N AN7254 AN7260 AN9321 AN9322 TB334	PDF
75344g Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334	PDF
irf540n Abstract: MOSFET IRF540n IRF540NT Contextual Info: IRF540N Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title F54 bt A, 0V, 40 m, Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models	Original	IRF540N O-220AB IRF540N O-220AB MOSFET IRF540n IRF540NT	PDF

75542P Abstract: 75542 AN9321 HUF75542P3 HUF75542S3S HUF75542S3ST TB334 Contextual Info: HUF75542P3, HUF75542S3S Data Sheet June 2000 File Number 4845.2 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE SOURCE	Original	HUF75542P3, HUF75542S3S O-220AB O-263AB HUF75542P3 75542P 75542P 75542 AN9321 HUF75542P3 HUF75542S3S HUF75542S3ST TB334	PDF
HUF75829D3S Abstract: AN9321 AN9322 HUF75829D3 HUF75829D3ST TB334 Contextual Info: HUF75829D3, HUF75829D3S Data Sheet February 2000 File Number 4795.1 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75829D3S HUF75829D3	Original	HUF75829D3, HUF75829D3S O-251AA O-252AA HUF75829D3 75829D HUF75829D3S AN9321 AN9322 HUF75829D3 HUF75829D3ST TB334	PDF
HUF75842P3 Abstract: HUF75842S3S HUF75842S3ST TB334 75842P 75842S Contextual Info: HUF75842P3, HUF75842S3S Data Sheet December 2000 File Number 4815.1 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75842P3 HUF75842S3S	Original	HUF75842P3, HUF75842S3S O-220AB O-263AB HUF75842P3 75842P HUF75842P3 HUF75842S3S HUF75842S3ST TB334 75842P 75842S	PDF
75652G Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334 Contextual Info: HUF75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUF75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models	Original	HUF75652G3 O-247 75652G 75652G AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334	PDF
75344G Abstract: 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334	PDF
AN9321 Abstract: HUFA75829D3 HUFA75829D3S HUFA75829D3ST TB334 Contextual Info: HUFA75829D3, HUFA75829D3S Data Sheet November 2000 File Number 4966 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75829D3S HUFA75829D3	Original	HUFA75829D3, HUFA75829D3S O-251AA O-252AA HUFA75829D3 75829D AN9321 HUFA75829D3 HUFA75829D3S HUFA75829D3ST TB334	PDF
76013D Abstract: AN7254 AN7260 HUF76013D3S HUF76013D3ST HUF76013P3 TB334 ON semiconductor N51 640E3 Contextual Info: HUF76013P3, HUF76013D3S Data Sheet December 2001 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low	Original	HUF76013P3, HUF76013D3S HUF76013 O-252AA HUF76013P3 O-220AB 76013D AN7254 AN7260 HUF76013D3S HUF76013D3ST HUF76013P3 TB334 ON semiconductor N51 640E3	PDF
AN7254 Abstract: AN7260 AN9321 AN9322 HRFZ44N TB334 Contextual Info: HRFZ44N Data Sheet December 2001 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HRFZ44N AN7254 AN7260 AN9321 AN9322 HRFZ44N TB334	PDF
AN9321 Abstract: HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5 Contextual Info: HUFA75823D3, HUFA75823D3S Data Sheet December 2001 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features • Ultra Low On-Resistance	Original	HUFA75823D3, HUFA75823D3S O-251AA O-252AA HUFA75823D3 75823D AN9321 HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5	PDF
67E-3 Abstract: FDI038AN06A0 FDP038AN06A0 Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management	Original	FDP038AN06A0 FDI038AN06A0 O-220AB O-262AB 67E-3 FDI038AN06A0	PDF

KP 100A Search Results

KP 100A Result Highlights (5)

KP 100A Datasheets (8)

KP 100A Price and Stock

Vishay Semiconductors 5KP100A-E3-54

Diotec Semiconductor AG 5KP100A

YAGEO Corporation 5KP100A-B

Microchip Technology Inc M5KP100A

Microchip Technology Inc M15KP100A

KP 100A Datasheets Context Search

PFZD 36

TGS 822

diode ry 10 A

marking SH SOT23 mosfet

ftu02p

p-channel 250V 30A power mosfet

B6U100

75307D

IRF630N

IRF530N

75344g

irf540n

75542P

HUF75829D3S

HUF75842P3

75652G

75344G

AN9321

76013D

AN7254

AN9321

67E-3