KN TRANSISTOR Search Results
KN TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
KN TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BA2904F
Abstract: amplifiers
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ba10358f/fvba10324af/fvba2904sba2904f/fv/fvm+8 | |
BA2902F
Abstract: 10358 IC BA2902F 2904S BA2902 BA2904F BA2904FV BA2902FV BA2904HFVM-C BA10358 EQUIVALENT
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ba10358f/fvba10324af/fvba2904sf/fv/fvmba2904f/fv/fvm+15 | |
10358
Abstract: BA10358 2904S BA2904FVM BA2902 BA2904HFVM-C BA2902FV BA2902F ic BA10324 BA2904FV
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ba10358f/fvba10324af/fvba2904sf/fv/fvmba2904f/fv/fvm+15 | |
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Contextual Info: TECHNICAL NOTE ROHM’s Selection Operational Amplifier/Comparator Series Comparators: Ground Sense BA10393F,BA10339F/FV,BA2903S F/FV/FVM,BA2903F/FV/FVM, BA2903HFVM-C,BA2901S F/FV/KN,BA2901F/FV/KN ●Description General purpose BA10393/BA10339 family and high |
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ba10393fba10339f/fvba2903sba2903f/fv/fvm+6 | |
ba10393
Abstract: BA10339F BA2901F BA2901FV BA2903F BA2903FV BA2903FVM 10393 BA2903HFVM-C BA10393F
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ba10393fba10339f/fvba2903sf/fv/fvmba2903f/fv/fvm+13 | |
BA2901F
Abstract: ba10339f ba10393 2901s ba10339 BA2903FV BA2903FVM BA2903F BA2901FV 10393 8 pin
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ba10393fba10339f/fvba2903sf/fv/fvmba2903f/fv/fvm+15 | |
2904S
Abstract: IC BA2902F 2902S BA10358 BA2902 BA2902F BA2902FV BA2904FV BA2904F 103 chip resistor Rohm
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ba10358f/fvba10324af/fvba2904sba2904f/fv/fvm+16 | |
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Contextual Info: Operational Amplifiers / Comparators Ground Sense Operational Amplifiers BA10358F/FV,BA10324AF/FV,BA2904S F/FV/FVM,BA2904F/FV/FVM BA2902SF/FV/KN,BA2902F/FV/KN,BA3404F/FVM No.11049EBT15 ●Description General-purpose BA10358/BA10324A family and high-reliability BA2904 /BA2902 family integrate two or four independent |
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ba10358f/fvba10324af/fvba2904sba2904f/fv/fvm+6 | |
2904S
Abstract: BA2904F BA2902F
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ba10358f/fvba10324af/fvba2904sba2904f/fv/fvm+9 | |
BA2902F
Abstract: IC BA2902F 2902S 2904S BA10324AF equivalent Operational amplifier 10358 BA2902FV schematic circuit BA2902F BA2904FV BA2904F
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ba10358f/fvba10324af/fvba2904sba2904f/fv/fvm+16 | |
N-Channel, Dual-Gate FET
Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
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OCR Scan |
ot-363vqfn-16-2sct-598n-channel, dual-gate fet+3 | |
PDTC124EU
Abstract: SC-59 PDTC143EK PDTC143ET PDTC124EK PDTA124ET PDTA143EU PDTC144ET
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OCR Scan |
pdtc114ekpdtc114etpdtc114eupdtc114tk+11 | |
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Contextual Info: KNÆREX M57915L Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Hybrid 1C Base Drive Module 0.5 Amperes/8 Volts OUTLINE DRAWING Description: The Powerex Hybrid IC’s are designed to provide logic compatible drive for transistor |
OCR Scan |
m57915l | |
BOX CLAMPS
Abstract: mu 86 Thomson CSF Thomson-CSF diodes
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OCR Scan |
box clampsmu 86thomson csfthomson-csf diodes | |
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Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE * G N1F4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • Resistors Built-in TYPE Ri = 22 k£2 R2 = 22 kn • Complementary to GA1F4M ABSOLUTE M AXIM UM RATINGS Maximum Voltages and Currents Ta = 25 °C |
OCR Scan |
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BA10339
Abstract: F TTL family characteristics BA10393 BA2901 BA10339 pin out BA2903FVM BA2901F BA2901FV BA2903F BA2903FV
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ba10393fba10339f/fvba2903f/fv/fvmba2901f/fv/kn+14 | |
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Contextual Info: Digital transistors-DTA series Product summary EMT3, UMT3, and SMT3 —100 mA specifications, two resistors UMT3 SMT3 EMT3 Ri kn Part no. Package Resistance r2 Pd = 150 mW 200 mW (kO) •o — & NPN Figure 2 o >° PNP Figure 1 (mA) G1 V0 (V) !o (mA) DTA114EQA |
OCR Scan |
dta114eqadta114yoadta123jqadta124eqa+6 | |
BA2901F
Abstract: BA2901FV BA2903F BA2903FV BA2903FVM
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ba10393fba10339f/fvba2903f/fv/fvmba2901f/fv/kn+11 | |
BA10358 EQUIVALENT
Abstract: BA10358 BA2902 equivalent integrated ba2902f BA2902F BA2904FV BA2902FV BA2904F BA10358FV BA10324A
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ba10358f/fvba10324af/fvba2904f/fv/fvmba2902f/fv/kn+15 | |
BA10358FV
Abstract: BA2904F BA2904FV BA2902F BA2902FV
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ba10358f/fvba10324af/fvba2904f/fv/fvmba2902f/fv/kn+11 | |
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Contextual Info: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FN 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E 2.8 + 0.2 R t = 1 0 kn o— A /V V Ri 0.65 I g ls 1.5 |
OCR Scan |
1987m | |
bd3532
Abstract: back-emf BD3533 ITT DIODE
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bd3533f/fvm/eknbd3531fbd3532f/efv/knbd3533/31/32+4 | |
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Contextual Info: File Num ber 1211 HARRIS SEMICONU SECTOR BUX39 SbE , . M3a22?1 High-Current, High-Speed, High-Power Silicon N-P-N Planar Transistors 1JQ ^ 7 ^ 3 3 -/ 3 For Switching and Amplifier Applications in Industrial and Commercial Service Features: • M aximum area-of-operation curves fo r dc and pulse operation - kn limit |
OCR Scan |
bux39m3a22 | |
C1847
Abstract: C1840 CMOS 74C14 transistor c1850 C1844 C1835 C1838 CZ079 h33 diode C1843
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OCR Scan |
mct521x74ls0574c14c1850+12 | |