KM68V1002AJ Search Results

Contextual Info: KM68V1002AJ-15T IL08 1M 128 K x 8 -BIT SRAM —TOP VIEW— A0 IN 1 32 A16 IN A1 IN 2 31 A15 IN A2 IN 3 30 A14 IN A3 IN 4 29 A13 IN CS 28 IN 5 OE INPUTS A0 - A16 CS WE : ADDRESS : CHIP SELECT : WRITE ENABLE OUTPUT OE : ENABLE OUT I/O1 6 27 I/O8 I/O2 7 26 I/O7

Contextual Info: KM68V1002A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 m A (M ax) Operating KM68V1002A-12 : 170 mA

Contextual Info: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

Contextual Info: PRELIMINARY CMOS SRAM KM68V1002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION »Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM68V1002A-12 : 170 mA (Max.)

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

AL15

Contextual Info: KM68V1002A/AL CMOS SRAM ELECTRONICS 1 2 8 K x 8 B i t H igh-Speed C M O S Static R A M 3 .3 V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) Q.5mA(Max.) ; L-veronly

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

Contextual Info: KM68V1002A, KM68V1002AI CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM 3.3V Operating} FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns(Max. • Low Power Dissipation Standby f m . ) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating KM68V1002A - 1 2 : 140mA(Max.)

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

KM68V1002A

Abstract: 300mil-SOJ
Contextual Info: PRELIMINARY KM68V1002A, KM68V1002AI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target.

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

Contextual Info: KM68V1002A CMOS SRAM 128K X 8 Bit High-Speed CMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,17,20 ns(Max.) • Low Pow er D issipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating K M 68V 1002A -12:1 7 0 m A

KM68V1002A

Contextual Info: PRELIMINARY KM68V1002A, KM68V1002AI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target.