KM64V1003B Search Results

Contextual Info: CMOS SRAM KM64V1003B 256K x 4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating) FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 8,10,12ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS): 5mA{Max.) Operating KM64V1003B - 8 : 150mA(Max.)

Contextual Info: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: Preliminary CMOS SRAM KM64V1003B/BL, KM64V1003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark

Contextual Info: R r ç ’i ^ i n e - y KM64V1003B/BL, KM64V1003BI/BLI CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12* (Max.) Low Power Dissipation The KM64V1003B/BL is a 1,048,576-bit high-speed Static Ran­

Contextual Info: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0

Contextual Info: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0

Contextual Info: P r e ’i ^ i r c ! - ' / KM64V1003B/BL, KM64V1003BI/BLI CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION •■Fast Access Time 8,10 , ^ * * (Max.) - Low Power Dissipation Standby (TTL) : 30» • (Max.)

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -