KM23V8000D Search Results

KM23V8000D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KM23V8000D		Samsung Electronics	8M-Bit (1Mx8) CMOS MASK ROM	Original	PDF	90.27KB	4
KM23V8000DG		Samsung Electronics	8M-Bit (1Mx8) CMOS MASK ROM	Original	PDF	90.27KB	4

KM23V8000D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KM23V8000D Abstract: KM23V8000DG Contextual Info: KM23V8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage :single +3.0V/ single +3.3V • Current consumption	Original	KM23V8000D 100ns 120ns KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 KM23V8000DG	PDF
Contextual Info: KM23V8000D G CMOS MASK ROM 8M-Bit (1 Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage :single +3.0V/ single +3.3V • Current consumption	OCR Scan	KM23V8000D 100ns 120ns 23V8000D 32-DIP-600 23V8000DG 32-SO P-525	PDF
KM23V8000D Abstract: KM23V8000DG Contextual Info: PRELIMINARY CMOS MASK ROM KM23V8000D G 8M-Bit (1Mx8) CMOS MASK ROM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION 1,048,576 x 8 bit organization Fast access time 3.3V Operation : 100ns(max.) 3.0V Operation : 120ns(max.) Supply voltage : 2.7V to 3.6V	Original	KM23V8000D 100ns 120ns 30/25mA KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 100pF KM23V8000DG	PDF
Contextual Info: KM23V8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time 3.3V Operation: 100ns(Max.) 3.0V Operation; 120ns{Max.) • Supply voltage rslngle +3.0V/ single +3.3V • Current consumption	OCR Scan	KM23V8000D 100ns 120ns KM23V8000D 32-DIP-600 23V8000DG: 32-SOP-52S KM23V8Q00D 100pF	PDF
Contextual Info: CMOS MASK ROM KM23V8000D G 8M-Bit (1 Mx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1,0 48,576 x 8 bit org an izatio n Fast acce ss tim e 3.3V O pe ra tion : 100ns(m ax.) 3.0V O pe ra tion : 120ns(m ax.) S up ply vo lta g e : 2.7V to 3.6V C u rrent con sum p tion	OCR Scan	KM23V8000D 100ns 120ns 30/25m 8000D	PDF
KM23V8000D Abstract: KM23V8000DG Contextual Info: KM23V8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage :single +3.0V/ single +3.3V • Current consumption	Original	KM23V8000D 100ns 120ns KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 118MAX KM23V8000DG	PDF
Contextual Info: KM23V800QD G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . 1,048,576 x 8 bit organization . Fast access time 3.3V Operation : 100ns(max.) 3.0V Operation : 120ns(max.) . Supply voltage : 2.7V to 3.6V . Current consumption Operating : 30/25mA(max.)	OCR Scan	KM23V800QD 100ns 120ns 30/25mA KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 KM23V8000D 100pF	PDF
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16	OCR Scan	KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T	PDF
48TSOP1 Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12 Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ \|— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 \|- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 \|- 1 KM23V4000D{E)TY-12 \|-j KM23V4000D(E)TY-15	OCR Scan	512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12	PDF