KL 04 DIODE Search Results

230v AC primary to 9v 500ma secondary transformer

Abstract: POWER SUPPLY BOARD 94V0 IN4004 DIODE 1N4007 500ma KA23D090050035G F8L 250V POWER SUPPLY BOARD 94V-0 230vac to primary 9v transformer transformer 230v to 9v, 500ma secondary transformer 9V 2A Transformer specification
Contextual Info: - , , , , Kl/^ CUI IN C Part No: DPD090050E-P5P-TK Description: Power Supply Date: 8/1 1/04 Unit: mm page No; ] of 6 TEST DATA fo rm a tion co nta ine d herein a p p lie s o n ly to the a b o v e listed p a rt number. O th e r versions o f this p a rt num ber w ith e lectrical o r m echanical va ria tion s are a v a ila b le . C o nta ct CUI Inc. fo r futher assistance.

2M84G

Contextual Info: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: Amplifier 1000w schematic diagrams schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter SCHEMATIC 1000w power amplifier stereo 1000W power amplifier schematic diagrams 12v 1000W AUDIO AMPLIFIER 500w power amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA0105A-1 RB-TA0105A-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.1 November 2004 GENERAL DESCRIPTION The RB-TA0105A reference board is based on the TA0105A digital audio power amplifier driver from

Contextual Info: SKiM 400GD126DM power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT ./  56 ./( 9 $ %    *+ $31% ,

Contextual Info: SKiM 601GD126DM power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM

phillips zener

Abstract: Leach relay M83536
Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

marking DIODE 2U 04

Abstract: marking 2U diode marking 2U 20 diode marking 2U 40 diode d490 D491 marking 2U 28 diode 2u schottky Barrier Diodes WSD490 WSD491
Contextual Info: W SD 490/W SD 491 Surface M o un t Schottkv B a rrie r Diode SCHOTTKV BARRIER R E C TIFIER S 1.0AM PERES 20-40VOLTS F eatu res: *L ow Turn-on Voltage *Fast S w itch in g *PN Ju n ction G uard Ring fo r T ransient and ESD P rotection M echanical D ata: *Case : SOT-346, M olded P lastic

J1 3009

Abstract: j1 3003 KL SN 102 w1 3005 1N4150 j3003 ci dtl 302
Contextual Info: r f' ^ > IQUALIFICATION I IREQUIREMENTS I I REMOVED I M I L - M - 3 8 5 10/33 30 June 1975 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, D T L , FLIP FLOPS, MONOLITHIC SILICON I I N A C T I V E F OR NEW D E S I G N A F T E R D A T E OF T H I S REVISIONj This specification is approved for use by all D e p a r t ­

Contextual Info: s e MIKROn V rsm V rrm Ifrm s Ifa v V Ultrafast Epitaxial Diode Modules maximum value for continuous operation 110 A | (sin. 325 A 1 8 0 ; Tease = 8 5 ° C ; 5 0 4 8 ,5 A Hz) 207 A 100 SKKD 50 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02

Contextual Info: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features                               !

KL 13 diode

Contextual Info: SEMiX 353GD126HDc Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 33c Trench IGBT Modules SEMiX 353GD126HDc   &' )       #   &' .+ (   &' .+ ()   *  7%0",78 9   *&+ /.+ &.+

Contextual Info: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features                               !

Contextual Info: SEMiX 302GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 2 Trench IGBT Modules SEMiX 302GB126HD Target Data Features                               !

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 6 3 , 6 3 A , 6 4 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION Equipped w ith low -voltage 1.8 V operation, a carrier generation circu it for infrared rem ote control transm ission,

024X12

Contextual Info: PF301-03 SMC6110FSeries CMOS 4BIT SINGLE CHIP MICROCOMPUTER •R O M 1K WORD #LC D driver confined #Low power dissipation •DESCRIPTION Th e SMC6110F Series is a C M O S 4-bit single chip microcomputer. It incorporates a 1,024X 12 bits ROM, a 4 8 X 4 bits RAM, a 9 6 segment LCD driver, restart with timer and key, and interrupt by key. The SMC6110F

302GB

Contextual Info: SEMiX 302GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiX 2 Trench IGBT Modules SEMiX 302GB126HD Target Data Features                               !

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

EUPEC TT 105 N 12

Abstract: EUPEC TT 105 N 14 EUPEC tt 105 N 16 EUPEC TT 105 N EUPEC tt 251 n
Contextual Info: 7- O I - Z / D 121N S5E D EUPEC TVpenreihe/Type range D 121 N_ 400 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische Spitzensperrspannung Effektiver • frmsm Durchlaßstrom Dauergrenzstrom •favm Maximum permissible values

j329

Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Contextual Info: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo

Contextual Info: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiX 3 Trench IGBT Modules SEMiX 253GB176HD Preliminary Data Features                         

Contextual Info: SEMiX 353GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT  - -12 5 7     SEMiXTM 3s Trench IGBT Modules SEMiX 353GB176HDs Target Data Features                         

Contextual Info: TO SH IB A TD62301 f302P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62301P, TD62301F, TD62302P, TD62302F 7CH LOW SATURATIO N SIN K DRIVER The TD62301P/F and TD62302P/F are comprised of seven NPN low saturation drivers. All units feature integral clamp diodes for switching