KIRD1064E01 Search Results
KIRD1064E01 Datasheets Context Search
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Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. |
Original |
G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E01 |