KF 25 TRANSISTOR Search Results

Contextual Info: FS 25 R 12 KF Transistor Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 25 A V ce S Ic Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm 0,104

Contextual Info: FS 25 R 06 KF 2 Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Thermal properties DC, pro B a u ste in /p e r module DC, pro Zweig / per arm 0,21 1,25 °C/W °C/W Maximum rated values VcES 600 V 25 A 150

Contextual Info: FS 25 R 12 KF 2 Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,104 °C/W DC, pro Zweig/per arm 0,625 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200

Contextual Info: FZ 400 R 06 KF 3 Transistor Transistor Thermische Eigenschaften Thermal properties 0,074 DC, pro Baustein / per module R th J C Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 400 A tp = 1 ms 800 A tc = 25° C

HHB8

Contextual Info: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #

jb 5531

Abstract: sl 0565 r JE 33 T108 JE 720 transistor
Contextual Info: W L Ì3 \'-7 > Ì> 7 > 9 Compound Transistor FN1L3N U □ > V=7 > ì>7.9 F*91PN PI mm K M o X 5 t £ l*|jK L T X ^ 1 ^ f i : mm 2. 8 ± 0 . 2 1"c 1.5 (R i = 4.7 k£2, R 2= 10 kfì) O o FA1L3N V x itfflx - W R è 1 1“ ( T a = 25 °C ) IH 3 u ? 3

T108

Abstract: TC-6241
Contextual Info: ÎH'ra'h Com pound Transistor GA1 L3M 4W H !» S / nM o L T W î : mm v ^ f , ( R i = 4 . 7 k£2, R 2 = 4 . 7 kfì) O — V W - R, o G N 1 L 3 M £ =j > 7 ° >J y > 9 ‘J T ' ê Ò E S (T a = 25 °C ) I l 3 9 u a u 3 - 3 • 9 9 i /H g 9 •/ 9 — V cE O

Contextual Info: FZ 600 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V ces ¡c 1200 V 6 00 A Thermal properties RfhJC DC, pro Baustein / per module RlthCK pro Baustein / per module

Contextual Info: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module

Contextual Info: h 7 > y X ^ / T ransistors 2SD1638 + y i7 2SD1638 — NPN h> S j® ^ ^ t illliffl/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • ^JfJ\t>±i2l/Dimensions Unit: mm) 2) £ '> / ’? 3) t - - a '.d±0.? KF*3l®0 - X - I = -j yPall

2n3904 2n3906

Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Contextual Info: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0

8313 transistor to-3

Abstract: board ccb2 kf 982 855E transistor Bf 981
Contextual Info: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon

Contextual Info: FZ 400 R 12 KF 2 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A Thermal properties RthJC DC, pro Baustein / per module 0,052 °C/W R» pro Baustein / per module 0,03 150 °C

PNP transistor 269

Abstract: HBFP-0420-TR3 transistor BF 502 CMP10 CMP12 HBFP-0420 r778 nr. 9181 transistor BF 199 CMP16
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0420 is a high performance isolated collector

Contextual Info: FF 75 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A RthCK VcES Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

transistor kf 469

Abstract: transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389
Contextual Info: ¥ ti¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Transition Freque ncy

Contextual Info: FZ 800 R 12 KF 1 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A Thermal properties Rthjc DC, pro Baustein /p e r module 0,02 °C/W RthCK pro Baustein / per module 0,01 °C/W

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,057 RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 600 A RthCK VcES le c/w pro Baustein / per module

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

Contextual Info: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy

dbe 0025

Abstract: transistor tt 2141 IC 74196 CMP10 HBFP-0405 TR3 303 marking 53 Sot-343
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0405 is a high performance isolated collector

NE68819

Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

BJT BF 331

Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

IC 74196

Abstract: kf 982 CMP16 2 GHz BJT CMP10 HBFP-0405 ku-band oscillator CMP68 r1565 marking 53 Sot-343
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0405 is a high performance isolated