KERMET CASE B Search Results

rohm mtbf

Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

zt158

Abstract: BD 149 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

DBT134

Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

mallory 150 series

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

BD136

Abstract: MJD47 MRF20030R
Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

Motorola 946

Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier

MRF6V3090N

Abstract: MRF6V3090NR1 MRF6V3090NBR5 mrf6v3090 DVB-T Schematic CRCW120610ROJNEA AN1955 CRCW120610KOJNEA mrf6v3090nr GPS50
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

DVB-T Schematic

Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

RF high POWER TRANSISTOR

Abstract: MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201 MRF6VP3091NR1
Contextual Info: Document Number: MRF6VP3091N Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

LDMOS DVB-T transistors

Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

LDMOS DVB-T transistors

Abstract: T0272 MRF6VP3091N Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

Contextual Info: Document Number: MMRF1018N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs MMRF1018NR1 MMRF1018NBR1 These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.

S0225

Abstract: SLWC083 TP_THVT_100_RND SLWU062 S0226 ECJ-0VC1H102J TRF370x s0214 DAC568X
Contextual Info: TRF370x Quadrature Modulator Evaluation Module User's Guide Literature Number: SLWU062 March 2010 2 SLWU062 – March 2010 Submit Documentation Feedback Copyright 2010, Texas Instruments Incorporated 1 2 3 4 5 . 5

503ahl

Abstract: hp laserjet 1000 circuit printer hp laserjet 1000 circuit Robinson Nugent idh sensor 3414 31024102 laserjet 4 diode LM4040AIM-4 Robinson Nugent idh-34lp XC3042-70
Contextual Info: DEM-DDC112U-C EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY INSTALLATION AND USE The DEM-DDC112U-C evaluation fixture is designed for ease of use when evaluating the DDC112 precision integrating analog-to-digital converter. This kit includes a PC interface board and DUT board, allowing for

riacon

Abstract: XC1736DPD8C 503AHL robinson-nugent 74HCT541N LI-500 riacon* 6 pin male connector
Contextual Info: DEM-DDC112U-C EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY INSTALLATION AND USE The DEM-DDC112U-C Evaluation Fixture is designed for ease of use when evaluating the DDC112 precision integrating analog-to-digital converter. This kit includes a PC Interface board and DUT board, allowing the user

Contextual Info: User's Guide SBOU048C – April 2007 – Revised April 2013 XTR111 Demonstration Fixture User's Guide This EVM features the XTR111 voltage-to-current converter integrated circuit and allows for evaluation in a variety of configurations. This user’s guide describes the characteristics, operation, and use of the

printer hp laserjet 1000 circuit

Abstract: Robinson Nugent IDH riacon* 6 pin male connector 503ahl riacon IDH-34lp IN5820 sensor 3414 DDC112 Robinson Nugent idh-34lp
Contextual Info: DEM-DDC112U-C EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY INSTALLATION AND USE The DEM-DDC112U-C evaluation fixture is designed for ease of use when evaluating the DDC112 precision integrating analog-to-digital converter. This kit includes a PC interface board and DUT board, allowing for

TRF3761-H

Contextual Info: User's Guide SLWU029D – October 2006 – Revised August 2007 TSW3003 Demonstration Kit 1 2 3 4 5 6 7 8 9 10 11 Contents Demonstration Kit Configuration Options . 3 Block Diagrams . 4

keltron capacitor

Abstract: 47uf 25V keltron OSC4SM DAC5668 VTD3-J0BC-10M00 TCO-2111-491 KELTRON resistors C61-C65 HEADER1X3 st DB3 c126
Contextual Info: User's Guide SLAU241A – June 2008 – Revised March 2010 DAC5668/88/89EVM 1 Overview 1.1 Purpose The DAC5668/88/89EVM provides a platform for evaluating the DAC5668, DAC5688, and DAC5689 digital-to-analog DAC converter under various signal, reference, and supply conditions. All three DACs

Contextual Info: TRF370417 www.ti.com SLWS213 – JANUARY 2010 50-MHz TO 6-GHz QUADRATURE MODULATOR Check for Samples: TRF370417 FEATURES APPLICATIONS • • • • • • • • • • • • 1 • • • • • • • • 76-dBc Single-Carrier WCDMA ACPR at –8