KDS126T Search Results

Contextual Info: SEMICONDUCTOR KDS126T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Low forward voltage. VF = 0.9V Typ. Fast reverse recovery time. tr r= 1.6ns(Typ.) Small total capacitance. E CT = 0.9pF(Typ.) 6

Contextual Info: SEMICONDUCTOR KDS126T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Low forward voltage. VF = 0.9V Typ. Fast reverse recovery time. tr r= 1.6ns(Typ.) E CT = 0.9pF(Typ.) K 6 2 5 3 4 DIM A B C D E F

Contextual Info: SEMICONDUCTOR KDS126T MARKING SPECIFICATION TS6 PACKAGE 1. Marking method Laser Marking UB 1 No. JA 2. Marking 2 Item Marking Description Device Mark UB KDS126T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor