KDS125E Search Results

Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Small package : TES6. C A 6 2 5 3 4 D ・Small total capacitance. 1 A1 ・Fast reverse recovery time. C ・Low forward voltage. P SYMBOL

Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Small package : TES6. B Low forward voltage. B1 Fast reverse recovery time. C 6 C 2 5 3 4 D SYMBOL RATING UNIT VRM 85 V VR 80 V

IR 30 D1

Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Small package : TES6. C A 6 2 5 3 4 D Small total capacitance. 1 A1 Fast reverse recovery time. C Low forward voltage. P SYMBOL RATING

Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Small package : TES6. C A 6 2 5 3 4 D Small total capacitance. 1 A1 Fast reverse recovery time. C Low forward voltage. P SYMBOL RATING

Contextual Info: SEMICONDUCTOR KDS125E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S5 1 2 3 No. Item Marking Description Device Mark S5 KDS125E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor