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KBPC35005W
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DC Components
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TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
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430.72KB |
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KBPC35005W
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Galaxy Semi-Conductor Holdings
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SILICON BRIDGE RECTIFIERS |
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76.24KB |
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KBPC35005W
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GeneSiC Semiconductor
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Discrete Semiconductor Products - Diodes - Bridge Rectifiers - BRIDGE RECT 1P 50V 35A KBPC-W |
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338.22KB |
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KBPC35005W
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Shanghai Sunrise Electronics
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Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 35 A. |
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17.02KB |
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KBPC35005W
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Vishay
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Bridges |
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80.47KB |
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KBPC35005/W
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Vishay Siliconix
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35A Bridge Rectifier |
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80.47KB |
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KBPC35005W-G
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Comchip Technology
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Bridge Rectifiers, Discrete Semiconductor Products, RECTIFIER BRIDGE 35A 50V KBPCW |
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KBPC35005W
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Microdiode Semiconductor
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Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 35.0 amperes. |
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KBPC35005W
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SUNMATE electronic Co., LTD
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Single phase silicon bridge rectifier KBPC35005W-KBPC3510W with 35A average forward current, 50 to 1000V repetitive peak reverse voltage, glass passivated die, epoxy isolated case, and mounting hole for #8 screw. |
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KBPC35005W
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Shenzhen Heketai Electronics Co Ltd
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KBP200-KBP210 bridge rectifier features diffused junction, 2.0A average rectified current, 60A peak forward surge current, low forward voltage drop of 1.1V at 2.0A, and repetitive reverse voltage range from 50V to 1000V.Bridge rectifier with diffused junction, 2.0A average rectified current, up to 1000V DC blocking voltage, low forward voltage drop of 1.1V at 2.0A, high surge current capability of 60A, operating temperature from -55 to +165°C. |
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KBPC35005W
