KAE X Search Results

micro fuse

Abstract: sharp fuse E170721 H60A H60S H63A P-KAE-001 KAE3202502NA92
Contextual Info: No. P-KAE-001 DATE 2007-01 PRODUCTS DATA SHEET MICRO FUSE UL/cUL approved File No.E170721 RoHS COMPLIANT Type KAE Size 1608 Type KAE micro fuse is designed for circuit protection against excessive current in portable electronic equipment, electronic circuit around

E170721

Abstract: H60A H60S H63A JISZ3282 P-KAE-001 0-75A Matsuo Electric 3202 502
Contextual Info: No. P-KAE-001 DATE 2006-10 PRODUCTS DATA SHEET マイクロヒューズ UL. cUL 認定品 File No.E170721 RoHS指令対応品 KAE型 1608サイズ 携帯用電子機器の普及にともない大容量バッテリーの使用が増加しています。マイクロヒューズKAE型は、携帯用電子機

Contextual Info: KAE 1 0 71 S 3 2 - 7 2 2 2 8 » ' ENG FILE COPY NOTES: 1. MATING: Interface Dimensions per Mil-C-39012/SMA Series and Solitron/Microwave MD-107 2. MATERIALS: All Metal parts except for Body Radius , Contacts and Lock Ring: Stainless Steel per QQ-S-764, Type

KAE x6

Abstract: 7VBD C386 C387 C388 NLCG
Contextual Info: \L [epieq Ligirak [uirch XQL \eloeparspe Knmrpnkkep VM^ {Nearspeq *Ligirak quirch aookicarinm rn XQL cnmrpnk reloeparspe cnmrpnkkep *R_[ecs_l c^_[e m_fi5 ]hgmkheecga pcmb g_per ^_o_ehi_^ QJE ]hgmkhe [eahkcmbf [g^ 877fl bcab li_^ l[fiecga *SSR ^kco_ hnminm 6 k_e[r hnminm [g^ SSR ^kco_ hnminm 6

Contextual Info: Technische Information / technical information FS75R12W2T4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values $% % & ' ' ' % . : & > % / ? > ' $% % % ' & * + ,-.

FS75R12W2T4

Contextual Info: Technische Information / technical information FS75R12W2T4_B11 IGBT-Module IGBT-modules EasyPACK 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

c707 10M006 512

Abstract: SIM READER amphenol C707 10m006 C707 10M006 049 2 Sim card diagram C707-10M006 0 CAD-0605-122 10M006 sim c707 C70710M006512
Contextual Info: Amphenol Card Readers SIMLOCK SIM/SAM Card Readers Environmental - -40ºC thru 85ºC - IEC 60512-4, Test 6d - IEC 60512-4, Test 6c Features • Same footprint as SIM card • Polarized • Suitable for automated assembly • Custom geometries and layouts possible

FP10R12W1T3

Abstract: KAE x
Contextual Info: Technische Information / technical information FP10R12W1T3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values #$ $ % & & & $ 9 % = $ . > = & #$ $ $ & ' * +,- ./01

MMBD5004BRM-7

Abstract: diode Marking code A2 MMBD5004BRM MMBD3004BRM MMBD5004
Contextual Info: MMBD3004BRM HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY Features • • • • • • Two Series Diode Circuits Connect to Form Full Wave Bridge Fast Switching Speed High Conductance High Reverse Breakdown Voltage Rating Lead Free/RoHS Compliant Version Note 3

DMN5L06VAK

Abstract: DMN5L06VAK-7 DMN5L06VK DMN5L06VK-7
Contextual Info: SPICE MODEL: DMN5L06VK DMN5L06VAK DMN5L06VK/VAK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-563 Low On-Resistance A Very Low Gate Threshold Voltage

Contextual Info: SPICE MODEL: DMN5L06VK DMN5L06VAK DMN5L06VK/VAK Lead-free Green NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · · Dual N-Channel MOSFET SOT-563 Low On-Resistance A Very Low Gate Threshold Voltage Dim

KIA 574

Abstract: ed 89a KAE x1 5A05c UIQN58445 9279
Contextual Info: 1/38 *<;757;2=. 9.4*? /DAOPMDN V Qnak[`af_ [YhY[akp lh kg 89 A V QOQR1MN , QODR [gfkY[k YiiYf_]e]fk V OC ZgYi\ k]ieafYdj ;SKFBAG *KKGFBAOFJIN V Rng haffa_ glk [`ga[]j Rlifaf_ dYeh0 \Yf_]iglj ja_fYd , j[iYe dYeh [gfkigd0Al\ag V Nh]f Yf\ j]Yd]\ IO:; YmYadYZd] kph]j

FP20R06KL4

Contextual Info: Technische Information / technical information FP20R06KL4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $% % & ' ' ' % . : & > % / ? > ' $% % % ' * + ,-. /012 (0 + 3,-.4 ()* + , -. (0 + ,-.4 ()* + , -.

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SURFACE MOUNT LMBD3004SLT1G SWITCHING DIODE 3 •Fast Switching Speed ·High Conductance ·High Reverse Breakdown Voltage Rating ·Pb-Free Package is available. The suffix G means Pb-free package. 1 2 SOT –23 Ordering Information Pb-free

Contextual Info: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns    High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at  Case: SOT23

Ceramic CAPACITOR KA5

Abstract: KAE x1 CI 2272 AN KAE x6 IC 2272
Contextual Info: LF2272 Colorspace Converter/ C o rrec to r 3 x 12-bits FEATURES □ 50 MHz Data and Computation Rate □ Full Precision Internal Calculations with Output Rounding □ On-board 10-bit Coefficient Storage □ Overflow Capability in Low Resolution Applications

IAI5

Abstract: 2FI50G T151 2FI50
Contextual Info: 2 R 5 0 G 2 x 50A : Outline Drawings FAST RECOVERY DIODE MODULE Features • • Short Reverse Recovery Time • Variety of C onnection M enu • Insulated Type : Applications • y -* » * * tlia * a u s • 7 U— Arc-W elders — Kffl • * Free-W heeling Diode

arduino uno

Abstract: arduino due arduino schematic diagram nobreak interfacing parallax propeller i S1V30120 betty ic EMIC BPS-8 equivalent schematic diagram of a hello voice effect
Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Emic 2 Text-to-Speech Module (#30016) Designed in conjunction with Grand Idea Studio (www.grandideastudio.com), the Emic 2 Text-to-Speech

KAE V9

Abstract: J-STD-020D MMBD2004S MMBD2004S-7-F
Contextual Info: MMBD2004S HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion High Reverse Breakdown Voltage

hp 2503

Abstract: KG41 KG252 Pole-120 kg64b KG100C
Contextual Info: KG-Switches Technical Data KG 125 KG 160 KG250 KG315 KG10 KG20 KG32 KG10A KG20A KG32A KG41 KG64 KG80 KG100 KG126 KG161 KG251 KG316 KG10B KG20B KG32B KG41B KG64B KG80C KG100C KG127 KG 162 KG252 KG317 Selection Data V V V V 690 660 300 400 690 660 600 500 690

marking ADMI

Abstract: marking ANs DMN5010VAK DMN5L06VAK DMN5L06VK DMN5L06VK-7 DS30769
Contextual Info: DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

satellite beacon receiver DDS

Abstract: 4122A
Contextual Info: CG-1220 REV V JUNE 2013 OPERATION AND MAINTENANCE MANUAL FOR THE DIGITAL TRACKING RECEIVER EXPORT CONTROL WARNING - the disclosure of this document or its contents to non-U.S. persons, or the transmission of its contents outside the United States must be in compliance with U.S. Export Laws and Regulations.

S69B

Abstract: 91AB A13A a67ay dh-bh
Contextual Info: 86./6 \z,3`ikv] ;9<91AB?5 8978 >=D5? ?5:1E 6JGTURJS Y |DL =:><=I deaf BB v>A: ~Damudfghdj Y kq HL>I8=>C< 86E67>A>IN Y h@1 9>:A:8IG>8 HIG:C<I= \7:IL:C 8D>A 6C9 8DCI68IH] Y sG:E6<: 9>HI6C8: pkBB v>A: ~Damdelfjd Y 26H= I><=I 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:

DMN5010VAK

Contextual Info: DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed