K4P160411C Search Results
K4P160411C Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| K4P160411C-B-50 |
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4M x 4-Bit CMOS Quad CAS DRAM with Fast Page Mode | Original | 400.86KB | 20 | ||
| K4P160411C-BC50 |
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DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 400.86KB | 20 | ||
| K4P160411C-BC60 |
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DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 400.86KB | 20 | ||
| K4P160411C-BL50 |
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DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 400.86KB | 20 | ||
| K4P160411C-BL60 |
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DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 400.86KB | 20 | ||
| K4P160411C-FC50 |
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DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin | Original | 400.86KB | 20 | ||
| K4P160411C-FL60 |
|
DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin | Original | 400.86KB | 20 |
K4P160411C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: K4P170411C, K4P160411C CMOS DRAM 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time (-50 or -60), power consumption(Normal or Low |
Original |
K4P170411C, K4P160411C fa11C, 300mil | |
4Mx4 dram simmContextual Info: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C |
Original |
M53620800CW0/CB0 M53620810CW0/CB0 M53620810CW0/CB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin 4Mx4 dram simm | |
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Contextual Info: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D |
Original |
M53620412DW0/DB0 M53620412DW0/DB0 M53620412D 4Mx36bits M53620412D 24-pin 28-pin 72-pin M53620412DW0 | |
c60 equivalent
Abstract: dram 4mx4 kmm5364
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Original |
M53620412CW0/CB0 M53620412CW0/CB0 M53620412C 4Mx36bits M53620412C 24-pin 28-pin 72-pin M53620412CW0 c60 equivalent dram 4mx4 kmm5364 | |
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Contextual Info: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C |
Original |
M53620812CW0/CB0 M53620812CW0/CB0 M53620812C 8Mx36bits M53620812C 24-pin 28-pin 72-pin M53620812CW0 | |
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Contextual Info: M53620400CW0/CB0 M53620410CW0/CB0 DRAM MODULE M53620400CW0/CB0 & M53620410CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0C |
Original |
M53620400CW0/CB0 M53620410CW0/CB0 M53620410CW0/CB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin | |
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Contextual Info: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D |
Original |
M53620812DW0/DB0 M53620812DW0/DB0 M53620812D 8Mx36bits M53620812D 24-pin 28-pin 72-pin M53620812DW0 |