K4E640811B Search Results
K4E640811B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ns3340Contextual Info: K4E660811B, K4E640811B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), package type (SOJ or |
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K4E660811B, K4E640811B K4E660811B-JC 400mil ns3340 | |
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Contextual Info: DRAM MODULE M372E080 8 3BJ(T)0-C Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.1 June 1998 DRAM MODULE M372E080(8)3BJ(T)0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS. |
Original |
M372E080 8Mx72 M372E80 8Mx72bits 400mil 100Max | |
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Contextual Info: DRAM MODULE M364E080 8 3BJ(T)0-C Buffered 8Mx64 DIMM (8Mx8 base) Revision 0.1 June 1998 DRAM MODULE M364E080(8)3BJ(T)0-C Revision History Version 0.0 (Sept. 1997) •Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS. |
Original |
M364E080 8Mx64 8Mx64bits 400mil 100Max |