K4E151612C-JC50 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin |
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Original |
PDF
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K4E151612C-JC60 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin |
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Original |
PDF
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K4E151612C-JL45 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin |
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Original |
PDF
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K4E151612C-JL50 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin |
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Original |
PDF
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K4E151612C-JL60 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin |
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Original |
PDF
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K4E151612C-LC50 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin |
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Original |
PDF
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K4E151612C-LC60 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin |
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Original |
PDF
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K4E151612C-LL45 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin |
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Original |
PDF
|
K4E151612C-LL50 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin |
|
Original |
PDF
|
K4E151612C-LL60 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin |
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Original |
PDF
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K4E151612C-TC50 |
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Samsung Electronics
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DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin |
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Original |
PDF
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K4E151612D |
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Samsung Electronics
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1M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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Original |
PDF
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K4E151612D-J |
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Samsung Electronics
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1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
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Original |
PDF
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K4E151612D-T |
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Samsung Electronics
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1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
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Original |
PDF
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