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    K4A53D Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK4A53D(STA4,Q,M)

    MOSFET N-CH 525V 4A TO220SIS
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    K4A53D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 525 V)


    Original     		TK4A53D PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK4A53D PDF

    2-10U1B

    Contextual Info: K4A53D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K4A53D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 1.3 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.0 S (標準)


    Original     		TK4A53D SC-67 2-10U1B VDD400 00A/s K4A53D 2002/95/EC) 2-10U1B PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK4A53D PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK4A53D PDF