K4013 TRANSISTOR Search Results

K4013 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

K4013 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor k4013 Abstract: k4013 K4013 transistor 2SK4013 MARKING toshiba 133 Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)	Original	2SK4013 transistor k4013 k4013 K4013 transistor 2SK4013 MARKING toshiba 133	PDF
2SK4013 Abstract: transistor k4013 K4013 transistor k4013 Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)	Original	2SK4013 2SK4013 transistor k4013 K4013 transistor k4013	PDF
Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK4013	PDF
k4013 Abstract: 2SK4013 transistor k4013 K4013 transistor Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK4013 k4013 2SK4013 transistor k4013 K4013 transistor	PDF
Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK4013	PDF
K4013 Abstract: 2SK4013 transistor k4013 K4013 transistor Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK4013 K4013 2SK4013 transistor k4013 K4013 transistor	PDF