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    K3911 TOSHIBA Search Results

    K3911 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB6586BFG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave Datasheet
    TC78B006AFNG
    		Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave Datasheet
    TB62216FTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5 Datasheet
    TB6613FTG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8 Datasheet
    TB67H303HG
    		Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10 Datasheet

    K3911 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3911

    Abstract: toshiba transistor k3911 2SK3911 2SK3911 equivalent K3911 TOSHIBA transistor 2SK3911 SC-65 "k3911"
    Contextual Info: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		2SK3911 15oducts k3911 toshiba transistor k3911 2SK3911 2SK3911 equivalent K3911 TOSHIBA transistor 2SK3911 SC-65 "k3911" PDF

    toshiba transistor k3911

    Abstract: k3911 K3911 TOSHIBA
    Contextual Info: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		2SK3911 toshiba transistor k3911 k3911 K3911 TOSHIBA PDF

    toshiba transistor k3911

    Abstract: K3911 TOSHIBA k3911 "k3911" 2SK3911 transistor 2SK3911 25VDD
    Contextual Info: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		2SK3911 toshiba transistor k3911 K3911 TOSHIBA k3911 "k3911" 2SK3911 transistor 2SK3911 25VDD PDF

    transistor 2SK3911

    Contextual Info: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		2SK3911 transistor 2SK3911 PDF

    toshiba transistor k3911

    Abstract: K3911 TOSHIBA transistor 2SK3911 K3911 transistor K3911 2SK3911 SC-65 "k3911"
    Contextual Info: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		2SK3911 toshiba transistor k3911 K3911 TOSHIBA transistor 2SK3911 K3911 transistor K3911 2SK3911 SC-65 "k3911" PDF

    k3911

    Abstract: toshiba transistor k3911 2SK3911 equivalent 2SK3911 transistor 2SK3911 K3911 TOSHIBA SC-65 transistor K3911 "k3911"
    Contextual Info: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		2SK3911 k3911 toshiba transistor k3911 2SK3911 equivalent 2SK3911 transistor 2SK3911 K3911 TOSHIBA SC-65 transistor K3911 "k3911" PDF

    K3911

    Abstract: 2SK3911 "k3911" K3911 TOSHIBA SC-65 MJ1000
    Contextual Info: 2SK3911 シリコンNチャネルMOS形 MACHⅡ π−MOSⅥ 東芝電界効果トランジスタ 2SK3911 ○ スイッチングレギュレータ用 単位: mm • ゲート入力電荷量が小さい。 : Qg = 60 nC (標準) • オン抵抗が低い。


    Original     		2SK3911 SC-65 2-16C1B 20070701-JA K3911 2SK3911 "k3911" K3911 TOSHIBA SC-65 MJ1000 PDF

    K3911

    Abstract: "k3911" 2SK3911 K3911 TOSHIBA 2SK3911 equivalent SC-65
    Contextual Info: 2SK3911 シリコンNチャネルMOS形 MACHⅡ π−MOSⅥ 東芝電界効果トランジスタ 2SK3911 ○ スイッチングレギュレータ用 単位: mm • ゲート入力電荷量が小さい。 : Qg = 60 nC (標準) • オン抵抗が低い。


    Original     		2SK3911 SC-65 2-16C1Bh-c) K3911 "k3911" 2SK3911 K3911 TOSHIBA 2SK3911 equivalent SC-65 PDF