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    Endicott Research Group Inc (ERG) K2952BC

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    Avnet Americas K2952BC Bulk 60
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    Endicott Research Group Inc (ERG) K2952BF

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    Silicon Laboratories Inc K2952C-REV4

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    Quest Components K2952C-REV4 1,600
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    Krypton Isolation Inc K2952C

    IC,DATA ACCESS ARRANGEMENT (DAA),SSOP,28PIN,PLASTIC
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    Quest Components K2952C 1,395
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    Others K2952CREV4

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    Quest Components K2952CREV4 438
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    K2952 Datasheets Context Search

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    k2952

    Abstract: 2SK2952
    Contextual Info: K2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)


    Original     		2SK2952 k2952 2SK2952 PDF

    k2952

    Contextual Info: K2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 400 V)


    Original     		2SK2952 k2952 PDF

    k2952

    Abstract: 2SK2952
    Contextual Info: K2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2952 Unit: mm Chopper Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current


    Original     		2SK2952 k2952 2SK2952 PDF

    k2952

    Abstract: JEITA SC-67 85a3 2SK2952
    Contextual Info: K2952 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ K2952 ○ スイッチングレギュレータ 単位: mm : RDS (ON) = 0.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 8.0 S (標準)


    Original     		2SK2952 10VID SC-67 2-10R1B K2952 2002/95/EC) k2952 JEITA SC-67 85a3 2SK2952 PDF

    k2952

    Contextual Info: K2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2952 Chopper Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)


    Original     		2SK2952 k2952 PDF