K2602 TOSHIBA Search Results

K2602 TOSHIBA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TB6586BFG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave	Datasheet
TC78B006AFNG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave	Datasheet
TB62216FTG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5	Datasheet
TB6613FTG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8	Datasheet
TB67H303HG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10	Datasheet

K2602 TOSHIBA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor k2602 Contextual Info: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 transistor k2602	PDF
K2602 Abstract: transistor k2602 2SK2602 SC-65 Contextual Info: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) Low leakage current	Original	2SK2602 K2602 transistor k2602 2SK2602 SC-65	PDF
K2602 Abstract: transistor k2602 K2602 toshiba 2SK2602 SC-65 Contextual Info: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 K2602 transistor k2602 K2602 toshiba 2SK2602 SC-65	PDF
Contextual Info: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON-resistance : RDS (ON) = 0.9 High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) (typ.) Low leakage current	Original	2SK2602	PDF
K2602 Abstract: 2SK2602 SC-65 Contextual Info: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 K2602 2SK2602 SC-65	PDF
K2602 Abstract: 2SK2602 SC-65 Contextual Info: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 K2602 2SK2602 SC-65	PDF
K2602 Abstract: jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T) Contextual Info: 2SK2602 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅤ 2SK2602 ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.9Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5S (標準)	Original	2SK2602 10VID SC-65 2-16C1B K2602 2002/95/EC) K2602 jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T)	PDF