K240 DIODE Search Results

IC H 102 D6

Abstract: V23990-K240-A-PM
Contextual Info: V23990-K240-A-PM MiniSKiiP 3 PIM 1200V/70A MiniSkiip® 3 housing Features ● IGBT3 technology for low saturation losses ● Solderless spring contact mounting system Target Applications Schematic ● Industrial motor drives Types ● V23990-K240-A-PM Maximum Ratings

Knox Diodes K120

Abstract: k390 Knox Semiconductor zener K270 K430 K120 K150 K180 K210 K240
Contextual Info: KNOX SEMICONDUCTOR, INC. A unique manufacturing process allows Knox Semiconductor to supply a range of Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices will find use in applications where conservation of battery life is a primary concern.

K300

Abstract: k390 K430 K240 K510 zener K270 K120 K150 K180 K210
Contextual Info: LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below PART NUMBER K120 K150 K180

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices

Contextual Info: } Low Level Zener Diodes VERY LOW VOLTAGE Type Nominal Number Zener Voilage Max Zz Vz @ Iz = 10 mA Vdc. Dynamic Impedance Reverse Current @ I = 10 mA Ma* Zzk @ L 1 mA Max Ir Vr (ohms) i oh TISI I m A> (Vdc) @ 25 C K 120 1 2 17 100 05 0 .4 K150 15 17 100

K511

Abstract: k390 K120 K300 zener K270 K150 K180 K210 K240 K270
Contextual Info: 5238534 KNOX SEMICONDUCTOR 99D INC 00131 D •' O ? D E l s a 3 f l 5 3 i 4 DDDG131 T f Low Level Zener D iodes • VERY LOW VOLTAGE Reverse Current Dynamic Impedance Max Zzk Type Nominal Number Zener Voltage M axZz V z@ lz = 10 mA @ l = 10m A @ I = 1 mA

Knox Semiconductor

Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
Contextual Info: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT2480-xN-xnnnx Series HUW0224003-01B February 26, 2003 Preliminary Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly in small PKG for CWDM of 2.5Gb/s transmission

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01A November 4, 2004 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series

1350nm

Abstract: h885 kounosu
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1430-xnnnx Series HUW0024094-01E August 26, 2003 Technical Specification of 1. 27µm~1.61µm MQW-DFB Laser Diode with Aspherical Lens Cap for CWDM SLT1430-xnnnx Series Page 1 of 8

Contextual Info: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allow s Knox Semiconductor to supply a range o f Very Low Voltage D iodes having the lowest reverse leakage currents and low impedance at currents specified at 10 m A and below . These devices

07 K150

Abstract: 07 K300
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . A unique manufacturing process allow s Knox Semiconductor to supply a range o f Very Low Voltage D iodes having the lowest reverse leakage currents and low impedance at currents specified at 10 m A and below. These devices

xnnnx

Abstract: SLT1440-xnnnx K605A 1350nm HUW0224035-01F h260a HUW0224035-01E h885 1293 nm laser diodes 1470nm
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Technical Specification of 1. 27µm~1.61µm MQW-DFB Laser Diode with Aspherical Lens Cap of Short Focal Distance Type for CWDM SLT1440-xnnnx Series

xnnnx

Abstract: 1350nm 1450nm laser diode HUW9924209-01E 1370nm h885 HUW9924209-01D E855A G675 1450nm
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT2420-xN-xnnnx Series HUW9924209-01E December 04, 2002 Preliminary Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly for CWDM of 622Mb/s and 2.5Gb/s transmission

xnnnx

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01C June 26, 2007 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series

1350nm

Abstract: HUW0224035-01E K605A
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01E October 13, 2004 Technical Specification of 1. 27µm~1.61µm MQW-DFB Laser Diode with Aspherical Lens Cap of Short Focal Distance Type for CWDM SLT1440-xnnnx Series

xnnnx

Abstract: Microwave Transmission applications
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4460-xnnnx Series HUW0224074-01E June 26, 2007 Technical Specification of 1.29µm~1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xnnnx Series RoHS Compliant

IEC-60874-14

Abstract: RH2-xnnnx xnnnx K240 diode Microwave Transmission applications SLW4460-PS 1348 1350nm h885 HUW0724125-01A
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SLW4460-xx/RH2-xnnnx Series Document No.: HUW0724125-01A Date of issue: January 28, 2008 Technical Specification of 1.29µm~1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xx/RH2-xnnnx Series

xnnnx

Abstract: h260a 1350nm h885 HUW0724102-01A SLW4470 RH2-xnnnx
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SLW4470-xx/RH2-xnnnx Series Document No.: HUW0724102-01A Date of issue: December 28, 2007 Technical Specification of 1.27µm-1.61µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2-xnnnx Series

1270nm DFB Laser Diode

Abstract: 1450nm laser diode 1350nm h885 laser DFB 1350nm HUW9924210-01B SLT2470-LN J205 K240 diode 1612 dfb
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT2470-xN-xnnnx Series HUW9924210-01B December 04, 2002 Preliminary Specification of 1.27µm~1.61µm MQW -DFB Laser Diode Module: Transmitter Optical Sub-assembly in small PKG for CW D M of 622Mb/s and 2.5Gb/s transmission

HUW0724107-01A

Abstract: xnnnx RH2-xnnnx 1350nm SUMITOMO slt4466 G675A sc 1287 1430nm
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SLT4460-xx/RH2xnnnx Series Document No.: HUW0724107-01A Date of issue: January 14, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission SLT4460-xx/RH2-xnnnx Series

xnnnx

Abstract: HUW9924208-01I 1350nm SLT4410-xnnnx K605A mqw-dfb* 1550nm D 1427 k605
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series HUW9924208-01I January 14, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission SLT4410-xnnnx Series

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series SLT4460-xnnnx Series HUW9924208-01G August 22, 2002 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission

SLT4410-xnnnx

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series SLT4460-xnnnx Series HUW9924208-01H June 27, 2006 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission