K2382 TRANSISTOR Search Results

K2382 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

K2382 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K2382 Abstract: transistor k2382 k2382 TRANSISTOR 2SK2382 K238 Contextual Info: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) High forward transfer admittance : \|Yfs\| = 17 S (typ.)	Original	2sk2382 k2382 transistor k2382 k2382 transistor +1k238	PDF
K2382 Abstract: transistor k2382 k2382 TRANSISTOR 2SK2382 Contextual Info: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 17 S (typ.)	Original	2sk2382 k2382 transistor k2382 k2382 transistor	PDF
k2382 Abstract: k2382 TRANSISTOR Contextual Info: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 17 S (typ.)	Original	2sk2382 k2382 k2382 transistor	PDF
k2382 Abstract: transistor k2382 2SK2382 k2382 TRANSISTOR Contextual Info: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 17 S (typ.)	Original	2sk2382 k2382 transistor k2382 k2382 transistor	PDF
transistor k2382 Abstract: k2382 k2382 TRANSISTOR Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2382 DATA SILICON N CHANNEL MOS TYPE tt - M O S V (2SK2382) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE	OCR Scan	2sk2382 100//a 2sk2382---50v +3transistor k2382 k2382 k2382 transistor	PDF