K1P TRANSISTOR Search Results

K1p transistor

Abstract: DUAL NPN K1P marking k1p MMDT2222A J-STD-020A MMDT2222A-7 MMDT2907A NPN K1P
Contextual Info: MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 · · · · · · E1 B C Mechanical Data · · B1 E2 Case: SOT-363, Molded Plastic

K1p TRANSISTOR

Abstract: NPN K1P MMDT2222A marking k1p BAS40-06T-7-F J-STD-020A MMDT2222A-7 MMDT2907A marking code k1p
Contextual Info: MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT2222A Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-363

K1p TRANSISTOR

Abstract: k1p sot-23 k1P transistor sot 23 marking k1p J-STD-020A MMBT2222A MMBT2222A-7 MMBT2222A-7-F MMBT2907A sot-23 Marking k1p
Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222A Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

K1p TRANSISTOR

Abstract: sot 223 K1p TRANSISTOR ipc-SM-782 marking k1p DZT2222A DZT2222A-13 DZT2907A k1p sot-223
Contextual Info: DZT2222A NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT2907A Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2222A TRANSISTOR NPN FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2222A TRANSISTOR NPN SOT-363 FEATURE Complementary PNP Type available MMDT2907A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value  Units

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MMDT2222A NPN Plastic-Encapsulate Transistors Epitaxial Die Construction Small Surface Mount Package Lead Free Plating

DUAL NPN K1P

Contextual Info: NEW PRODUCT MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX Mechanical Data

K1p TRANSISTOR

Abstract: NPN K1P marking k1P MMDT2222A MMDT2907A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2222A TRANSISTOR NPN FEATURE Complementary PNP Type available MMDT2907A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 R FI KXX TB C 1 Mechanical Data If] H Case: SOT-363, Molded Plastic

K1p TRANSISTOR

Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B C Mechanical Data

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MMDT2222A NPN Plastic-Encapsulate Transistors Epitaxial Die Construction Small Surface Mount Package Lead Free Plating

dual npn 500ma

Abstract: K1p TRANSISTOR marking k1p
Contextual Info: MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX KXX Mechanical Data · · · · · E2 Case: SOT-363, Molded Plastic

DUAL NPN K1P

Abstract: marking 1P sot363
Contextual Info: PRELIMINARY MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data

MARKING k1p

Abstract: K1p TRANSISTOR MMDT2222A MMDT2907A DS30125
Contextual Info: MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX KXX Mechanical Data · · · · · E2 Case: SOT-363, Molded Plastic

Contextual Info: • bbSBTBl QOSMSfl? 70S H A P X N AHER PHILIPS/DISCRETE BCW71 BCW72 b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

MMDT2222A

Abstract: 1N914
Contextual Info: MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) 8 o .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15)

GP350MHB06S

Abstract: DS4923-5
Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4923-4.0 FEATURES DS4923-5.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

DIM800NSM33-A000

Contextual Info: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5486-1.4 FEATURES DS5486-2.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat

DIM1200ESM33-A000

Abstract: LM 1747
Contextual Info: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5492-1.1 FEATURES DS5492-2.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat

dynex gp250mhb06s

Abstract: GP250MHB06S
Contextual Info: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 FEATURES DS4325-6.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25

723 ic internal diagram

Abstract: DIM400GDM33-A000
Contextual Info: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Preliminary Information Replaces September 2001, version DS5495-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

GP500LSS06S

Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces January 2000 version, DS4324-5.0 FEATURES DS4324-6.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25

DIM200PHM33-A000

Contextual Info: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Preliminary Information Replaces August 2001, version DS5464-3.0 FEATURES DS5464-4.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat (typ)