K13 DIODE Search Results
K13 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
K13 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 |
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QS8K13 QS8K13 Pw10s, R1120A | |
Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 |
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QS8K13 QS8K13 Pw10s, R1120A | |
Contextual Info: QS8K13 Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 |
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QS8K13 QS8K13 Pw10s, R1120A | |
50-12P1
Abstract: S2485
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50-12P1 42T120 50-12P1 S2485 | |
transistor P18Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET |
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Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25 |
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40D/06 B25/50 | |
237tdContextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions |
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50-06P1 25T60 237td | |
Contextual Info: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines |
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42T60 75-06P1 | |
synchronous motor 100-06Contextual Info: TM ECO-PAC 2 IGBT Module PSHI 100/06* H-Bridge Configuration IC25 = 69 A VCES = 600 V VCE sat typ. = 2.3 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 K10 K13 H13 A1 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC *NTC optional |
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42T60 75-06P1 synchronous motor 100-06 | |
ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
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125OC 100ms ixf55n50 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50 | |
PSHI25
Abstract: 14T60 H13A1 514T60
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14T60 25-06P1 PSHI25 14T60 H13A1 514T60 | |
Contextual Info: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines Features t IGBTs Maximum Ratings |
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42T60 75-06P1 | |
25T60
Abstract: .25T60 RG60s
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50-06P1 25T60 25T60 .25T60 RG60s | |
50-12P1
Abstract: PSHI50-12 pshi50
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42T120 50-12P1 50-12P1 PSHI50-12 pshi50 | |
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NTC K15
Abstract: 125OC PSMG150
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K10/11 125OC NTC K15 125OC PSMG150 | |
50-12P1Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18 |
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50-12P1 42T120 50-12P1 | |
pshi50
Abstract: PSHI50-06 NTC 33 pshi
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25T60 50-06P1 pshi50 PSHI50-06 NTC 33 pshi | |
Contextual Info: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions |
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120D/01 | |
A5N9Contextual Info: ECO-PACTM 2 IGBT Module IC25 = 18 A VCES = 1200 V VCE sat typ. = 2.3 V PSII 15/12* Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 15/12* K12 IGBTs Symbol VCES VGES IC25 IC80 I CM VCEK tSC (SCSOA) Ptot Symbol *NTC optional Conditions |
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Contextual Info: TM ECO-PAC 2 IGBT Module PSII 35/06 IC25 = 31 A VCES = 600 V VCE sat typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C K12 Maximum Ratings VGES IC25 IC80 TC = 25°C |
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Contextual Info: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions |
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Contextual Info: TM ECO-PAC 2 IGBT Module PSII 24/06* IC25 = 19 A VCES = 600 V VCE sat typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 24/06* K12 IGBTs *NTC optional Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C |
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G0627Contextual Info: VMO 80-05P1 ID25 = 82 A VDSS = 500 V RDSon = 50 m Ω Power MOSFET in ECO-PAC 2 Single MOSFET Die X18 A1 I K10 LN9 *NTC optional Preliminary Data Sheet K13 K15 MOSFET Symbol Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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80-05P1 G0627 | |
eco-pac
Abstract: PSMG100
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