K13 DIODE Search Results
K13 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
K13 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 |
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qs8k13pw10sr1120a | |
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Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 |
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qs8k13pw10sr1120a | |
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Contextual Info: QS8K13 Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13 |
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qs8k13pw10sr1120a | |
50-12P1
Abstract: S2485
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50-12p142t120s2485 | |
transistor P18Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET |
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transistor p18 | |
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Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25 |
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40d/06b25/50 | |
237tdContextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions |
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50-06p125t60237td | |
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Contextual Info: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines |
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42t6075-06p1 | |
synchronous motor 100-06Contextual Info: TM ECO-PAC 2 IGBT Module PSHI 100/06* H-Bridge Configuration IC25 = 69 A VCES = 600 V VCE sat typ. = 2.3 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 K10 K13 H13 A1 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC *NTC optional |
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42t6075-06p1synchronous motor 100-06 | |
ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
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125oc100msixf55n5050n50+4 | |
PSHI25
Abstract: 14T60 H13A1 514T60
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14t6025-06p1pshi25h13a1+1 | |
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Contextual Info: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines Features t IGBTs Maximum Ratings |
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42t6075-06p1 | |
25T60
Abstract: .25T60 RG60s
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50-06p125t60rg60s | |
50-12P1
Abstract: PSHI50-12 pshi50
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42t12050-12p1pshi50-12pshi50 | |
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NTC K15
Abstract: 125OC PSMG150
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k10/11125ocntc k15psmg150 | |
50-12P1Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18 |
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50-12p142t120 | |
pshi50
Abstract: PSHI50-06 NTC 33 pshi
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25t6050-06p1pshi50pshi50-06+2 | |
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Contextual Info: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions |
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120d/01 | |
A5N9Contextual Info: ECO-PACTM 2 IGBT Module IC25 = 18 A VCES = 1200 V VCE sat typ. = 2.3 V PSII 15/12* Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 15/12* K12 IGBTs Symbol VCES VGES IC25 IC80 I CM VCEK tSC (SCSOA) Ptot Symbol *NTC optional Conditions |
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a5n9 | |
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Contextual Info: TM ECO-PAC 2 IGBT Module PSII 35/06 IC25 = 31 A VCES = 600 V VCE sat typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C K12 Maximum Ratings VGES IC25 IC80 TC = 25°C |
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Contextual Info: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions |
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Contextual Info: TM ECO-PAC 2 IGBT Module PSII 24/06* IC25 = 19 A VCES = 600 V VCE sat typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 24/06* K12 IGBTs *NTC optional Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C |
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G0627Contextual Info: VMO 80-05P1 ID25 = 82 A VDSS = 500 V RDSon = 50 m Ω Power MOSFET in ECO-PAC 2 Single MOSFET Die X18 A1 I K10 LN9 *NTC optional Preliminary Data Sheet K13 K15 MOSFET Symbol Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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80-05p1g0627 | |
eco-pac
Abstract: PSMG100
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eco-pacpsmg100 | |