K.206 TRANSISTOR Search Results

BU206

Abstract: BU205 bu 205 BU204 BU 129 VV131
Contextual Info: 4B Ê> 'w BU 204 - BU 205 - BU 206 Silizium-NPN-Leistungstransistoren Silicon NPN Power Transistors Anwendung: Application: Horizontal-Ablenk-Endstufen in Schwarz-Weiß-Fernsehempfängern Horizontal deflection circuits in black and white TV-receivers Besondere Merkmale:

dc chopper circuit

Abstract: DC chopper dc to dc chopper DIODE B12 CHopper DC M206 vce 1200 and 5 amps transistor diode chopper power transistor motor control wheel
Contextual Info: 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s fo r D C c h o p p e r • P o w er transistors and free w h e e ls are b uilt into one package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter D k v k ; h ly p u I Vcso

EVK75-050

Abstract: EVM31-050A EVL31-050 EVK71-050 EVK31-050 ETG81-050A 2DI75S-050A 1di150 EVG31-050A 1DI100E-120
Contextual Info: Transistor Modules COLLMER SEMICONDUCTOR INC HÔE D WM 2230712 DDOlblD 371 • COL Tl.3-15 1200 vo lts class p o w e r tran sisto r m o d u les fo r DC chopper • B e s t s u i t e d f o r m o t o r c o n t r o l a p p l i c a t i o n s u s in g a c h o p p e r c o n v e r t e r

MOC205

Abstract: MOC206 MOC207 MOC208 207 opto soic
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

MOC205

Abstract: MOC207 MOC206 MOC208 RS481A Motorola diode 207 MOC205 motorola
Contextual Info: MOTOROLA Order this document by MOC205/D SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR = 40 – 80%] Transistor Output [CTR = 63 – 125%] These devices consist of a gallium arsenide infrared emitting diode optically

MOC205

Abstract: MOC207 MOC206 MOC208 RS481A MOC205 motorola
Contextual Info: MOTOROLA Order this document by MOC205/D SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR = 40 – 80%] Transistor Output [CTR = 63 – 125%] These devices consist of a gallium arsenide infrared emitting diode optically

1DI200H-055

Abstract: DIODE B14 max 550 transistor B14 diode on semiconductor 1DI200h055 DC chopper 1DI100F100 1DI100E100 1DI150 1DI150H055
Contextual Info: COLLMER SEMICONDUCTOR INC WM SSaßTia OOOlbO*} bS7 * C O L 4BE D BIPOLAR TRANSISTORS Ratings and Specifications ^ @ 3 600 v olts class pow er tra n sisto r m odules for DC chopper • P o w e r t r a n s is t o r s a n d fr e e w h e e ls a re b u ilt in t o o n e p a c k a g e .

Contextual Info: PIC10F200/202/204/206 Data Sheet 6-Pin, 8-Bit Flash Microcontrollers  2004-2013 Microchip Technology Inc. DS40001239E Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PIC10F200

Abstract: PIC10F20X DS41239d cn DS41239D PIC10F200/202/204/206 Memory Programming PIC10F202-I/MC ps2 pic micro-controller PIC10F200/202/204/206 Memory Programming Specify PIC10F200-I/OT PIC10F206
Contextual Info: PIC10F200/202/204/206 Data Sheet 6-Pin, 8-bit Flash Microcontrollers 2007 Microchip Technology Inc. DS41239D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PIC10F200-I/PG

Abstract: PIC18f452 timer0 c18 codes 10f206 PIC16F877 LED project with assembly language DS41228 10F206-I PIC10F200/202/204/206 Memory Programming PIC18F452 timer0 Capacitive Touch Sense Switch 10f206 PIC16F877 LED POTENTIOMETER ADC
Contextual Info: PIC10F200/202/204/206 Data Sheet 6-Pin, 8-Bit Flash Microcontrollers  2004 Microchip Technology Inc. Preliminary DS41239A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

DS41239c

Abstract: PIC10F200 DS41228 PIC10F20X PIC10F202 PIC10F204 PIC10F206 PIC10F2XX gp3 mclr max 202 rs232 driver
Contextual Info: PIC10F200/202/204/206 Data Sheet 6-Pin, 8-Bit Flash Microcontrollers 2006 Microchip Technology Inc. Preliminary DS41239C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2710 LOW FREQUENCY POWER AMPLIFIER • Complement to KSA1150 • Collector Dissipation Pc = 300mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol R atin g Unit VcBO VcEO V ebo 40 20 5 500 300 150 -5 5 -1 5 0 V

Contextual Info: AVANTEK I N C 20E 0A V A N TEK D im n tb QGQb43T 1 AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 100 mit Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • • 10.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz

Contextual Info: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz

019N08N

Abstract: 019N08 IPB019N08N3 IPB019N08N IPB022N08N3 IPB019N08N3 G IEC61249-2-21 JESD22 IPB019N08N3G
Contextual Info: IPB019N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for motor drive applications V DS 80 V R DS on ,max 1.9 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM)

M 28-131 LG

Contextual Info: ^Ordering number :EN 2813 _ 2SC4454 NPN Epitaxial P lanar Silicon Transistor High-Speed Switching Applications F e a tu re s - Fast switching speed • Low collector saturation voltage • High gain-bandwidth product •Small collector capacity

BSX45

Abstract: BSX46 BSX66
Contextual Info: BSX45 BSX 46 SILICON PLANAR NPN MEDIUM POWER AM PLIFIER S The BSX 45 and BSX 46 are silicon planar epitaxial NPN transistors in Je d ecT O -39 metal case, intended fo r use in m edium power general industrial applications. ABSOLUTE M A X IM U M RATINGS Vces

MPS3703

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bbS3T33.' 0017314 =1 ■ MPS3702. MPS3703 ;v T‘ ^ -2 1 SILICON PLANAR EPITAXIAL TRANSISTORS PNP silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

marking code SG transistors

Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Contextual Info: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier

2SK1113

Abstract: Q 206
Contextual Info: TOSHIBA 2SK1113 Field Effect Transistor Silicon N Channel MOS Type L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • ^DS(ON) = 0.33Q (Typ.)

SO3572R

Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Contextual Info: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo

bu 1350

Abstract: BU 508 transistor power flyback bu508
Contextual Info: JJ-E M G CORP Û1 m DE|D[ gTMEb 7 | J - J 2 - Ó / Horizontal Deflection Transistors T E LEFU N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet) hermetic package and in the high voltage epoxy package. Our basic

Contextual Info: A N AUER PHILIPS/DISCRETE DbE D ~ • bb53T31 0015Qb3 □ ■ l MAINTENANCE TYPE for new design use MS11900Y MS1011B700Y r- 33 PULSED MICROW AVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in