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K6-0.006-AC-43
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Bergquist
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Thermal - Pads, Sheets, Fans, Thermal Management, THERMAL PAD TO-220 .006" K4 |
Original |
PDF
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1 |
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K6002D
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Switchcraft
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Patchbay, Jack Panel Accessories, Boxes, Enclosures, Racks, COLOR CHIPS MMVP RED |
Original |
PDF
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4 |
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K6003B
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Switchcraft
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Patchbay, Jack Panel Accessories, Boxes, Enclosures, Racks, COLOR CHIPS MMVP ORANGE |
Original |
PDF
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4 |
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K6004B
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Switchcraft
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Patchbay, Jack Panel Accessories, Boxes, Enclosures, Racks, COLOR CHIPS MMVP YELLOW |
Original |
PDF
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4 |
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K6005N
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Switchcraft
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Patchbay, Jack Panel Accessories, Boxes, Enclosures, Racks, COLOR CHIPS MMVP GREEN |
Original |
PDF
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4 |
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K6006L
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Switchcraft
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Patchbay, Jack Panel Accessories, Boxes, Enclosures, Racks, COLOR CHIPS MMVP BLUE |
Original |
PDF
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4 |
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K600-A
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Panduit
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Crimpers, Applicators, Presses - Accessories, Tools, PD-600-A & FPC-600-A UPDATE KIT |
Original |
PDF
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1 |
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K60S
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Voltage Multipliers
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High Voltage Rectifiers Epoxy Molded, 3000nS Recovery |
Scan |
PDF
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61.11KB |
2 |
AK60H10F
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AK Semiconductor
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AK60H10F N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 100A continuous drain current, and 5.7mΩ typical RDS(ON) at 10V VGS, designed for high efficiency power switching applications. |
Original |
PDF
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GPK600SG120D2
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CREATEK Microelectronics
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62mm single tube IGBT module with 1200V collector-emitter voltage, 600A continuous collector current at TC=100°C, 2.1V typical VCE(sat), and integrated freewheeling diode for motor drives and inverters. |
Original |
PDF
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AK60R540K
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 600 V drain-source voltage, 540 mΩ on-resistance, 8 A continuous drain current, and low gate charge for high-efficiency power conversion applications. |
Original |
PDF
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AK60R900K
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 600 V drain-source voltage, 900 mΩ on-resistance, 5 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. |
Original |
PDF
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AK6005R
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 5A continuous drain current, 46mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and high-frequency applications. |
Original |
PDF
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AK60P06S
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK60P06S with -60V drain-source voltage, -6A continuous drain current, and 45mΩ RDS(ON) at VGS=-10V, featuring advanced trench technology for low gate charge and high switching efficiency. |
Original |
PDF
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AK60P09AS
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AK Semiconductor
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AK60P09AS P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -9A drain current, RDS(ON) less than 35mΩ at VGS=-10V, suitable for power switching and high frequency circuits. |
Original |
PDF
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WSCK6081A
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Winsemi Microelectronics
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2.5A buck PWM switching charger with 30V input, 1.5MHz synchronous step-down controller, ±25mV charge voltage accuracy, USB-Limit function, and integrated OVP, available in DFN3x3-10L package. |
Original |
PDF
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AK60R2K2K
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 600 V drain-source voltage, 2 A continuous drain current, 1.85 ohm typical RDS(ON), low gate charge, and TO-251 or TO-252 package options. |
Original |
PDF
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AK6003
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AK Semiconductor
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AK6003 N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 105mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications in SOT-23 package. |
Original |
PDF
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JST137K-600G
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Jiangsu JieJie Microelectronics Co Ltd
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8A TRIAC in TO-252 package with 600V repetitive peak off-state and reverse voltage, suitable for AC switching applications including heating control, motor speed control, and phase control circuits. |
Original |
PDF
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AK6012AS
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AK Semiconductor
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AK6012AS N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 12A continuous drain current, and low RDS(ON) of 8.5mΩ typical at VGS=10V, suitable for power switching and load switch applications. |
Original |
PDF
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AK60H10F
