K V 63 Search Results

Contextual Info: CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3 V 8 K / 16 K x 8 Asynchronous Dual-Port Static RAM CY7C144AV CY7C006AV 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM 3.3 V 8 K / 16 K × 8 Dual-Port Static RAM Features

Contextual Info: CY7C008V CY7C018V CY7C009V CY7C019V 3.3 V 64 K/128 K x 8/9 Dual-Port Static RAM CY7C008V/009V CY7C018V/019V 3.3 V 64 K/128 K × 8/9 Dual-Port Static RAM 3.3 V 64 K/128 K × 8/9 Dual-Port Static RAM Features • Fully asynchronous operation ■ Automatic power-down

Contextual Info: CY7C0851V/CY7C0851AV CY7C0852V/CY7C0852AV CY7C0853V/CY7C0853AV FLEx36 3.3 V 32 K / 64 K / 128 K / 256 K x 36 Synchronous Dual-Port RAM FLEx36™ 3.3 V 32 K / 64 K / 128 K / 256 K × 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access

LED dotmatrix display

Abstract: MA1010
Contextual Info: LED display LED K-y h v h 'J -y ? * K? U K Dot configulalion « dot Com.-Anode 16x16 tt LED dot-matrix display Absolute maximum ratings £ Peak-emission wavelength Com.-Cathode SLA-5733 24x24 iFP/dOt VR/dot Pd mA . mA !v W 567 Y.G (15) 100 3 630 (U.R) (15)

CYPRESS CROSS REFERENCE dual port sram

Abstract: cy7c025av-25ai
Contextual Info: CY7C024AV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location ■ Expandable data bus to 32 bits or more using Master and Slave

MN6617

Abstract: CXD2500 dj bk SM5877AM sumida FM SM5877 SM5877A filter 400hz AD725C
Contextual Info: ri k T * - L « N irf 111 K P p Q ^ «Í2 >K ^ 0 0 K ml ^ w COj- ^ 1 'Kr 'S K K Q A n £f «J Q A ”N * 1'N- & TT A Pu v j u i 1-H £ *I W S' •E o g t§ i ,K t 5s ' s >\ 1 H is */ * CM K "f " V JFn~ fig 3 « 3 5 ^ &< ij a§£ ►/ K > LO uri ■A Y *D

AD540

Abstract: AD540J AD540K AD540S Wakefield Engineering
Contextual Info: ANALOG ► DEVICES High Accuracy, Low Cost FET-lnput Operational Amplifier FEA TUR ES Low Cost Low lb: 2!:ipA max K Low V os: 20m V max (K) Low V os D rift: 25juV/°C max (K) High Differential Input Voltage Capability: ± 20 V P R O D U C T D E S C R IP T IO N

AD7376AN100

Contextual Info: ANALOG DEVICES ± 15 V Operation Digital Potentiometer AD7376* FEATURES 128 Position Potentiom eter Replacement 10 k il, 50 k il, 100 k il, 1 M i l Power Shutdow n: Less than 1 |iA 3-W ire SPI Com patible Serial Data Input +5 V to +30 V Single Supply Operation

Contextual Info: CY7C1345G 4-Mbit 128 K x 36 Flow-Through Sync SRAM 4-Mbit (128 K × 36) Flow through Sync SRAM Features Functional Description • 128 K × 36 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O supply (VDDQ) ■ Fast clock-to-output times

CY7C1325G

Contextual Info: CY7C1325G 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Functional Description Features • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

Contextual Info: CY7C1325H 4-Mbit 256 K x 18 Flow-Through Sync SRAM 4-Mbit (256 K × 18) Flow-Through Sync SRAM Features Functional Description • 256 K × 18 common I/O ■ 3.3 V core power supply (VDD) ■ 2.5 V or 3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times

AN6341N

Abstract: KTS 011 AN6344
Contextual Info: AN6344 AN6344 V T R v m m w ij — J j 'f l j l J i i i i m S S / V T R C y lin d e r S e rv o C o n tro l C irc u it U n it ' mm AN6344 l±, VTR cr>> 'I • n m • AN6344 l± , >k<r>Wiife£% L T k -2>0 » I K a S frliB B K C T L K i W ± l i i f f i 0 K

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF5SC4 OUTLINE fk 40V Feature • Tj=150°C • Tj= 150°C • PR RSM T ’A ' i ^ V Î ' I ' K i E • • 71 [ Æ -J U K • Full M o ld e d • I Ê S I f f i2 k V « | I • D ie le ctric S tren g th 2 k V Rating

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

Contextual Info: MN103S65G Type MN103S65G Internal ROM 128 K-byte Internal RAM 4 K-byte SRAM Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 25 ns at 4.3 V to 5.5 V, 10 MHz internal regulator used 25 ns (at 3.0 V to 3.6 V, 10 MHz) *at internal 4 times oscillation used)

AD5200BRMZ10

Abstract: AD5200 Analog devices branding code dlb
Contextual Info: a FEATURES AD5200—256-Position AD5201—33-Position 10 k⍀, 50 k⍀ 3-Wire SPI-Compatible Serial Data Input Single Supply 2.7 V to 5.5 V or Dual Supply ؎2.7 V for AC or Bipolar Operations Internal Power-On Midscale Preset APPLICATIONS Mechanical Potentiometer Replacement

r2b diode making

Abstract: 1s4555 AD5235
Contextual Info: FEATURES Dual-channel, 1024-position resolution 25 kΩ, 250 kΩ nominal resistance Maximum ±8% nominal resistor tolerance error Low temperature coefficient: 35 ppm/°C 2.7 V to 5 V single supply or ±2.5 V dual supply SPI-compatible serial interface Nonvolatile memory stores wiper settings

AD5222 equivalent

Contextual Info: a FEATURES AD5200—256-Position AD5201—33-Position 10 k⍀, 50 k⍀ 3-Wire SPI-Compatible Serial Data Input Single Supply 2.7 V to 5.5 V or Dual Supply ؎2.7 V for AC or Bipolar Operations Internal Power-On Midscale Preset APPLICATIONS Mechanical Potentiometer Replacement

Contextual Info: ANALOG DEVICES 2-/4-Channel Digital Potentiometers AD8402/AD8403 FEATURES 256 Position Replaces 2 or 4 Potentiometers 10 k il, 50 k il, 100 k ii Power Shut Down—Less than 5 n-A 3-Wire SPI Compatible Serial Data Input 10 MHz Update Data Loading Rate +2.7 V to +5.5 V Single-Supply Operation

CY62148E

Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

Contextual Info: MN101C527 Type MN101C527 ROM x× 8-bit 16 K RAM (×× 8-bit) 1.5 K Package LQFP064-P-1414 *Lead-free Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.3 V.

Contextual Info: MN101C08C Type MN101C08C ROM x× 8-bit 48 K (External memory can be expanded) RAM (×× 8-bit) 1.5 K (External memory can be expanded) Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)

Q69-X474

Abstract: siemens varistors SIOV-CN0805 VARISTOR S10k275 dnv certificate Varistor S20K150 Rupture Disk s14k250 siemens S14K250 Q69X3233
Contextual Info: Varistors Contents Type Page Metal oxide varistors SIOV SMD varistors S IO V -C N *-*-*^ 138 Disk varistors, untaped SIOV-S05K-*-*^ SIOV-S07K*-*-^ SIOV-S1 !<★★★ S IO V -S 1 4 K * * S IO V -S 2 0 K * * 141 142 143 144 145 Disk varistors, taped S IO V -S * * * G * S *

SCT 380

Abstract: t15 thyristor sk 3003 s Semikron Semitop sk 70 dt 08 SEMITOP t15-40 thyristor BRIDGE-RECTIFIER compact SK 70 DT 16
Contextual Info: SK 70 DT k - 68 A full conduces« C V -e o -c ) VRWi- VOFM V SEMITOP0 3 V 930 800 S K 70 D T 08 1300 1200 S K 70 D T 12 1700 1600 S K 70 D T 16 S ym bol C o n d itio n s «0 T # - 8 0 -C •tsm T ^ - 2 5 *C ; 10 ms 450 A T ^ - 1 2 5 *C; 1 0 m s 380 A T ^ - 2 5 -C; 8 .3 . 1 0 ms