K V 63 Search Results

Contextual Info: s EMIKRDn VRSM V r rm dv/dt cr Itrm s (m a xim u m valu e for continuous operation) 40 A V d rm Ita v (Sin. V V V /|is 180; Tease = 60 °C) 25 A 700 600 500 S K K T 19/06 D S K K T 20/06 □ - 900 800 500 S K K T 19/08 D S K K T 20/0 8 D S K K T 2 0B 0 8 D

Contextual Info: silìJllCllii I f r m s m axim um v a lu e for co n tin u o u s operation V rsm V 300 A rrm SEMIPACK 2 Fast Diode Modules I f a v (sin. 180; Tease = 85 °C; 50 Hz) V 141 A 400 S K K E 165 M 04 600 S K K E 165 M 06 800 S K K E 165 M 08 SKKE165M S K K E 165M

Contextual Info: CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3 V 8 K / 16 K x 8 Asynchronous Dual-Port Static RAM CY7C144AV CY7C006AV 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM 3.3 V 8 K / 16 K × 8 Dual-Port Static RAM Features

fa 506

Contextual Info: - 32 - t - K A U + + -y 7' S ? PÆ S *(PF)/S * * ü E E (Ÿ ) # K V 1 5 6 3 BM X 5t V r (V ) 1 506.0 4 28.0 27. 0 M i É : AM f a - t mÍ j’ fñ]dritti 20.0 1 . 0 / 8 .0 • K V 1 5 63M œ j * : AM -f - - t M ? |5¡Üffl0 • K V 1 5 6 4M V r (V ) 1 27.0

Contextual Info: CY7C09359AV3.3 V 4 K/8 K x 18 Synchronous Dual Port Static RAM CY7C09349AV CY7C09359AV 3.3 V 4 K/8 K × 18 Synchronous Dual Port Static RAM 3.3 V 4 K/8 K × 18 Synchronous Dual Port Static RAM Features • True dual ported memory cells which allow simultaneous

f650

Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S

Contextual Info: CY7C008V CY7C018V CY7C009V CY7C019V 3.3 V 64 K/128 K x 8/9 Dual-Port Static RAM CY7C008V/009V CY7C018V/019V 3.3 V 64 K/128 K × 8/9 Dual-Port Static RAM 3.3 V 64 K/128 K × 8/9 Dual-Port Static RAM Features • Fully asynchronous operation ■ Automatic power-down

Contextual Info: CY7C008V CY7C018V CY7C009V CY7C019V 3.3 V 64 K/128 K x 8/9 Dual-Port Static RAM CY7C008V/009V CY7C018V/019V 3.3 V 64 K/128 K × 8/9 Dual-Port Static RAM 3.3 V 64 K/128 K × 8/9 Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous

Contextual Info: CY7C0851V/CY7C0851AV CY7C0852V/CY7C0852AV CY7C0853V/CY7C0853AV FLEx36 3.3 V 32 K / 64 K / 128 K / 256 K x 36 Synchronous Dual-Port RAM FLEx36™ 3.3 V 32 K / 64 K / 128 K / 256 K × 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access

Contextual Info: CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833V FLEx18 3.3 V 128 K / 256 K / 512 K x 18 Synchronous Dual-Port RAM FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM Functional Description Features • True dual-ported memory cells that allow simultaneous access

Contextual Info: MN101C589 , MN101C58A Type MN101C589 MN101C58A ROM x×8-bit 24 K 32 K RAM (××8-bit) 1.5 K 1.5 K Package Minimum Instruction Execution Time Interrupts Timer Counter LQFP064-P-1414 *Pb free 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)*1

Contextual Info: MN101C589 , MN101C58A Type MN101C589 MN101C58A ROM x× 8-bit 24 K 32 K RAM (×× 8-bit) 1.5 K 1.5 K Package Minimum Instruction Execution Time Interrupts Timer Counter LQFP064-P-1414 *Lead-free 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)*1

Contextual Info: MN101C589 , MN101C58A Type MN101C589 MN101C58A ROM x× 8-bit 24 K 32 K RAM (×× 8-bit) 1.5 K Package Minimum Instruction Execution Time Interrupts Timer Counter 1.5 K LQFP064-P-1414 *Lead-free 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)* 1

Contextual Info: MN101C589 , MN101C58A Type MN101C589 MN101C58A ROM x× 8-bit 24 K 32 K RAM (×× 8-bit) 1.5 K 1.5 K Package Minimum Instruction Execution Time Interrupts Timer Counter LQFP064-P-1414 *Pb free 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)*

MN101C589

Contextual Info: MN101C589 , MN101C58A Type MN101C589 MN101C58A ROM x× 8-bit 24 K 32 K RAM (×× 8-bit) 1.5 K Package Minimum Instruction Execution Time Interrupts Timer Counter 1.5 K LQFP064-P-1414 *Lead-free 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)* 1

Contextual Info: CY7C024AV/024BV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location

AD8501

Abstract: FDV301N AD5280 AD5282 RU-14 TSSOP-16 ADR512
Contextual Info: Single/Dual, +15 V/±5 V, 256-Position, I2C-Compatible Digital Potentiometer AD5280/AD5282 FEATURES APPLICATIONS AD5280: 1 channel AD5282: 2 channels 256 positions 5 V to 15 V single supply; ±5.5 V dual-supply operation 20 kΩ, 50 kΩ, 200 kΩ Low temperature coefficient 30 ppm/°C

Contextual Info: CY7C09269V/79V/89V CY7C09369V/89V 3.3 V 16 K / 32 K / 64 K x 16 / 18 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K / 64 K × 16 / 18 Synchronous Dual-Port Static RAM Features • ■ True dual-ported memory cells that allow simultaneous access of the same memory location

Contextual Info: MN101D02D , MN101D02F , MN101D02G , MN101D02H Type VTRServo MN101D02D MN101D02F MN101D02G MN101D02H ROM x× 8-bit 72 K 96 K 128 K 160 K RAM (×× 8-bit) 2K 3K 4K 5K Package QFP100-P-1818B *Pb free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 2.2 V to 5.5 V fixed to 14.32 MHz internal frequency division)

Contextual Info: MN101D02D , MN101D02F , MN101D02G , MN101D02H Type VTR Servo MN101D02D MN101D02F MN101D02G MN101D02H ROM x× 8-bit 72 K 96 K 128 K 160 K RAM (××8-bit) 2K 3K 4K 5K Package QFP100-P-1818B *Pb free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 2.2 V to 5.5 V fixed to 14.32 MHz internal frequency division)

Contextual Info: MN101D02D , MN101D02F , MN101D02G , MN101D02H Type VTR Servo MN101D02D MN101D02F MN101D02G MN101D02H ROM x× 8-bit 72 K 96 K 128 K 160 K RAM (××8-bit) 2K 3K 4K 5K Package QFP100-P-1818B *Pb free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 2.2 V to 5.5 V fixed to 14.32 MHz internal frequency division)

Contextual Info: MN101D02D , MN101D02F , MN101D02G , MN101D02H Type VTRServo MN101D02D MN101D02F MN101D02G MN101D02H ROM x× 8-bit 72 K 96 K 128 K 160 K RAM (×× 8-bit) 2K 3K 4K 5K Package QFP100-P-1818B *Pb free 0.1397 µs (at 4.0 V to 5.5 V, 14.32 MHz) 71.5 µs (at 2.2 V to 5.5 V fixed to 14.32 MHz internal frequency division)

CY7C09099V

Contextual Info: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.

CY7C09099V

Contextual Info: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.