K AND M ELECTRONICS Search Results

BJ79

Abstract: MIL-STO-454
Contextual Info: DATA d K T A M B XM TW S O J U B f f I t i w k i h i m c t h m i c s in c . AND SHALL «IT K OISOOSCD, O P IH J m UHO — — •-rr o i n a m fa c H i - -M PCMXSSXON. m m er/m w NOTES: 1. 9. PART DESCRIPTION! 2. 30 5 -0592 Ish ic 9ATgBCI TTT

Siebe

Contextual Info: TECCOR ELECTRONICS DO-214AA P1200S, P2000S S ID A C 9 I~ Solid State O vervoltage Protection Features • Designed specifically for Lucent M icroelectronics LCAS L7581/2/3 Solid State Switches • Bellcore 1089 and ITU K.17 - K.21 Com pliant • Surge Ratings up to 500A, 2x1 Ops

BCW92 A, B

Abstract: BC460
Contextual Info: MICRO ELECTRONICS LTD 51E D • ^0^1700 D0G1DÖ3 43S M M E H K Medium Power Amplifiers and Switches I T-27-01 M A X IM U M RATINGS V CE SAT POLARITY FE BC431 BC432 BC440 BC441 BC445 N P N N N TO-92F TO-92F TO-39 TO-39 T 0 -9 2 F 625 625 1000 1000 625 0.8

MIL-PRF-55342

Abstract: rm0402 10R0 RM2512 RM0603
Contextual Info: Precision Military and Space Qualified Chip Resistors MIL-CHIP Series • Now qualified to MIL-PRF-55342 Space Level T • Seven industry standard sizes available • MIL-PRF-55342 Characteristics E, H, K, and M • MIL-PRF-55342 extended reliability levels C, M, P, R, S and T

d4069ubc

Abstract: CTS OSCILLATORS
Contextual Info: r & r r o K O Ceramic Oadttators CRHT 223 TYPE CRHT MHz band with built in capacitors Available on tape and reel Description • Built-in ca p a cito r M H z band cera m ic oscillators for m icro proce ssors and infra-red rem o te controls, telephone D.T.M .F., reference signal oscillators, etc

Contextual Info: 2 3 4 5 6 7 Kontakt-MaPe contact dimensions 6x 2 = 1 2 A (Langen der St e c k - und A n s c b lu 0 s e if e gelten fur eingepre0te S tec k ve rb ind e r) (mating and termination length of contacts apply to pressed in connectors) g Kontakt-Typ A B C K L M

Contextual Info: 2 3 4 5 6 7 Kontakt-Mape contact dimensions A Langen der St ec k- und A n s c hl uP s ei t e gel ten fur ei ngepr ePte St ec k ver bi nder (mating and termination length of contacts apply to pressed in connectors) 0M Kontakt-Typ p i n type A B C K L M N P Q

reflex klystron

Abstract: K465 klystron acceleration klystron reflex
Contextual Info: SYLVANIA1 SY LV A N IA engineering data service 6389 electronics division D ESCRIPTIO N : X -B an d R u gged ized Reflex K lystron . Form er design ation K 4 6 5 . D esigned for local oscillato r service w here m axim um frequency stability is required under con dition s o f extrem e sh o ck and vibration or sustained acceleration.

D012M

Abstract: 73K212L
Contextual Info: SSI 73K212L ¿ m m s v s k m Bell 212A/103 Single-Chip Modem s A TDK Group/Company January 1994 FEATURES DESCRIPTION One-chip Bell 212A and 103 standard compatible The SSI 73K212L is a highly Integrated slngle-chlp modem IC which provides the functions needed to

LS7031

Abstract: LS7237
Contextual Info: L S I •* COMPUTER SYSTEMS 2LE 0 ■ S30MbQb.0000^31 7 ■ i-v ' ^ K lfS •custom. EXTRA-CUSTOM IS LSI COMPUTER SYSTEM’S ANALOG AND DIGITAL FULL CUSTOM SERVICE. IT SAVES YOU MONEY THAT SEMI-CUSTOM WASTES. EXTRA-CUSTO M SAVES YOU M O NEY W ITH M A X IM U M

ML-5682

Abstract: machlett 5682 high power Triode for induction heating A-8485 5682K 1S20 550C machlett triode triode push-pull circuit tempilaq
Contextual Info: The M achlett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 Tel. 203-348-7511 • TW X 203-327-2496 DESCRIPTION The M L -5682 is a general-purpose high-pow er triode su it­ able for use in A M , FM and T V broad castin g, dielectric and up to 140 k W w ith a w ater flow o f 60 gp m . T h e m axim um

2SD1691

Contextual Info: ST 2SD1691 NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. FEATURES: •Large current capacity and low VCE sat :

design HF PSK modem

Abstract: 73K221L
Contextual Info: SSI 73K221L m m s w k m A TDK Group/Company CCITT V.22, V.21 Single-Chip Modem s January 1994 DESCRIPTION FEATURES The SSI 73K221L is a highly integrated single-chip modem IC which provides the functions needed to construct a CCITT V.22 and V.21 compatible modem,

bergquist

Abstract: D2196
Contextual Info: Gap Filler 2000 Two-Part Thermally Conductive, Liquid Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP FILLER 2000 PROPERTY Color / Part A • Thermal conductivity: 2.0 W/m-K • Ultra-conforming, designed for fragile and low-stress applications

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

Contextual Info: SSI 32D536 ó é m M k t n Data Synchronization/ 1, 7 RLL ENDEC with Write Precompensation s June, 1989 DESCRIPTION FEATURES The SSI 32D536 Data Synchronizer/1,7 RLL ENDEC provides data recovery and data encoding for storage systems which employ a 1,7 RLL encoding format.

2SA952

Abstract: IB15-0 2SA952 L
Contextual Info: ST 2SA952 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three group, M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MMBTSC2787LT1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package

10,7mhz

Contextual Info: MMBTSC2787LT1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package