K 9632 Search Results

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2290 Sep-96 9632 K DALLAS DA084400 PCB SIPSTIK STRESS/JOB NO. READPOINT Sample Size/No. of Fails Hi Temp Storage 85°C, No Bias P-18163 336 Hr 1000 Hr

100132-1

Contextual Info: r DO N O T SCALE DIMENSIONS THIRD ANGLE PROJECTION IN mm NOTES: •41,4' / t\ amp -t r a d e m a r k /2\ AMP-IDENTIFICATION NUMBER ACC. D I N 1451 M I T T L E S C H R . H E I G H T J,2 /§\ AMP-MOLD NUMBER A C A V I T Y FOR; 1 4mm. S O C K E T C O N T A C T

pbt-GF30

Abstract: DIN 16901 140
Contextual Info: ,2003. ï MATED WITHi PASSEND ZU. ï ï 963207 DI5T REVISIONS 1 P PROJECT NR.i 89-52072 A-A AENDERUN6EN DESCRIPTION BESCHREIBUNG '— CO RELEASED FOR PUBLICATION i‘l7 jl LIUÜlLLjlfflltfuilL •. FREI FUER VERQEFFENTLICHUNS COPYRIGHT 2003 BY AMP INCORPORATED. Â t / j S g / S r K S B À L T E N .

1RF9630

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • ■ • • • TO-220 Lower R 0s ON Improved inductive ru gge d n e ss Fast sw itching tim es

PBT-GF30

Abstract: Tyco PBT-GF30 DIN 16901 140 1-962340-1 PBTGF-30 EGOO-1630-03 D9020 pbtgf30 AMP PBT-GF30 tyco pbtgf30
Contextual Info: ,2003. ï MATED WITHi PASSEND ZU. ï ï 963207 DI5T REVISIONS 1 P PROJECT NR.i D LTR HI 89-52072 A-A AENDERUN6EN DESCRIPTION BESCHREIBUNG '— CO RELEASED FOR PUBLICATION i‘l7 jl LIUÜlLLjlfflltfuilL •. FREI FUER VERQEFFENTLICHUNS COPYRIGHT 2003 BY AMP INCORPORATED. Â t / j S g / S r K S B À L T E N .

25x30

Abstract: x0035
Contextual Info: VISHAY SUPPRESSION INDUCTORS R o e d e rste in Ring Core Inductors Double Inductors Current Compensated F1 7 5 3 2 Technical Data: See page 126 Circuit Diagram: b la c k b lu e Description of Circuit: In order to prevent magnetization through the working current, the leads

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

flash trigger COIL

Abstract: 2N5064 PerkinElmer trigger WS300
Contextual Info: Device Name Issued Date Issued By : BGDC 0008 /4500 : 09/03/2004 : Page # Rev Date Index # : 1 of 1 : : 1. Mechanical Data All dimensions in mm and diagram is not drawn to scale e l d r g 8+/-0.5 17 max 1.8+/-0.1 1.2+/-0.1 14.5+/-1 n/o h i k 3.5+/-0.8

Minolta

Abstract: 2N5064 F210A
Contextual Info: Device Name Issued Date Issued By : BGDC 0010 /4502 : 09/03/2004 : Page # Rev Date Index # : 1 of 1 : : 1. Mechanical Data All dimensions in mm and diagram is not drawn to scale e l d r g 10+/-0.7 19.0 max 1.8+/-0.1 1.2+/-0.1 16.5+/-1.0 b/c n/o h i k appr. 0.8

hcpl 636

Abstract: pb-2121 HCNW 636 LM 3937 tk 09 615
Contextual Info: T in i H E W L E T T 0 D~ 0 C 0 U DL E QS m L rJÌ P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers Technical Data HCPL-4506 HCPL-0466 HCNW4506 Features Applications • Performance Specified for Common IPM Applications over Industrial Temperature

33G PH DIODE

Abstract: PH 33G diode
Contextual Info: Thn% H E W L E T T 1"UM P A C K A R D 20 MBd High CMR Logic Gate Optocouplers Technical Data HCPL-2400 HCPL-2430 Features Applications Description • High Speed: 40 MBd Typical Data Rate • High Common Mode Rejection: HCPL-2400: 10 kV/|ls at v c m = 300 v Typical

IEC 974-1

Contextual Info: Production Code VISHAY Vishay Roederstein According to IEC 60062 YEAR LETTER CODE 1986 U 1987 V 1988 w 1989 X 1990 A 1991 B 1992 C 1993 D 1994 E 1995 F 1996 H 1997 J 1998 K 1999 L 2000 M 2001 N 2002 P 2003 R 2004 S 2005 T 2006 U MONTH LETTER / NUMBER CODE

c143e

Abstract: DIGITAL TRANSISTORS c143e transistor c143e 143EE
Contextual Info: Transistors Digital transistors built-in resistors D T C 1 4 3 E E / D T C 1 4 3 E U A / D T C 1 4 3 E K A D T C 1 4 3 E S A •Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent cir­

4511 gm

Abstract: TTC 5200 ir 8707 nte 6250 76722 8840 TIC 1260 stoneridge se 5000 x4202 STR G 6352 SG 3425 N
Contextual Info: ülmEE Distributors W I R E L E S S 4 fiC Europe Austria SPO ERL E ELE C TR O N IC Am K ehlerpark 1 6850 D ornbirn Tel: 43 5572 38 65 0 0 -0 Fax: 43 5572 38 65 0 0 -9 0 A rrow D enm ark A/S S m edeholm 13 A 2730 Herlev Tel: 45 44 50 82 00 Fax: 45 44 50 82 03

Contextual Info: DIESE ZEICHNUNG WAR IST LOC NR. _ P A SSEN D EIN K O N T R O L L I E R T E S IS A C O N TRO LLED D O C U M E N T. AENDERUNGEN LTR ZU_ ÄNDERUNGEN, T E C H N IS C H E N HALTEN DRAW IN G REVI SI ONS D IS T VERWENDET FÜR S C H R IT T T H IS DOKUMENT DIE REVISED

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

PBT-30GV

Abstract: 5-967059-1 5-967059-2 7766D
Contextual Info: 4 3 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT - 2 RELEASED FOR PUBLICATION VERWENDET MIT 965261 963208 ALL RIGHTS RESERVED. By - WAR NR. LOC Ä ND ER U NG EN DIE DEM T E C H ­ N IS C H E N H O RTSC H RITT DIENEN, B EH A L TEN WIR U N S VOR 90-52125-20

diode 9232

Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
Contextual Info: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on

irf9630

Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
Contextual Info: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

TYCO PBT-GF30

Abstract: PBT-GF30 FR ASA-GF30 PBT-GF30 1.0 PBT ASA-GF30 T-GF30
Contextual Info: ,2 0 0 3 . ï M A T E D WITH. P A S S E N D ZU. ï ï DI5T 8 REVISIONS •— 1 962352/9632871 ^ COPYRIGHT 2 0 0 3 RELEASED FOR PUBLICATION FR E I F U E R V E R O E F F E N T L I C H U N 6 r y a m p rwrnppnpitfd A L L R I G H T S RESERVE D. BY A H P I N COR POR ATE D, a l l e R E I C H T E V ORB EHA LTE N.

PBT-GF30

Abstract: Tyco PBT-GF30 PBT-GF30 FR PBT-GF-30 PBT ASA-GF30 ASA-GF30 AMP PBT-GF30 PBT-GF30 12 PBTGF-30
Contextual Info: ï ï DI5T REVISIONS •— 1 962352/9632871 ^ 2003 ï M A T E D WITH. P A S S E N D ZU. 8 COPYRIGHT , 2003. RELEASED FOR PUBLICATION FR E I F U E R V E R O E F F E N T L I C H U N 6 r y a m p rwrnppnpitfd D. B Y A H P I N COR POR ATE D, AaLlLl eR IRGEHITCSH TRESERVE

PBT-GF30 FR

Abstract: pbt-gf30 TYCO PBT-GF30 ASA-GF30 PBTGF-30 PBT-GF-30 PBT-GF30 k PBTGF30 PBT ASA-GF30 PBT -ASA-GF30
Contextual Info: ï ï DI5T REVISIONS •— 1 962352/9632871 ^ 2003 ï M A T E D WITH. P A S S E N D ZU. 8 COPYRIGHT , 2003. RELEASED FOR PUBLICATION FR E I F U E R V E R O E F F E N T L I C H U N 6 r y a m p rwrnppnpitfd D. B Y A H P I N COR POR ATE D, AaLlLl eR IRGEHITCSH TRESERVE

irf9630

Abstract: MOSFET IRF9630 IRF9630 mosfet IRF9632 IRF9631
Contextual Info: P-CHANNEL POWER MOSFETS IRF9630/9631 /9632/9633 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

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