K 845 MOSFET Search Results

Case 449-02

Contextual Info: Document Number: MRF9582NT1 Rev. 1, 7/2006 Freescale Semiconductor Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION

A113

Abstract: MRF9582NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

Case 449-02

Abstract: MRF9582NT1 855F
Contextual Info: Document Number: MRF9582NT1 Rev. 1, 7/2006 Freescale Semiconductor Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION

Case 449-02

Abstract: A113 MRF9582NT1
Contextual Info: Freescale Semiconductor Technical Data Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA,

MRF373A

Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

MRF373A

Abstract: MRF373AR1 MRF373AS MRF373ASR1
Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF373A

Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz
Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF373A

Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay
Contextual Info: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

845 motherboard circuit

Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
Contextual Info: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

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Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
Contextual Info: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

nippon capacitors

Abstract: dvbt transmitter j564 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF373A

Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1

L1A marking

Abstract: MRF373A
Contextual Info: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

T491D106K010AT

Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

Contextual Info: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF377H

Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF377H

Abstract: nippon capacitors J628 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

0805J

Abstract: nippon capacitors J564 Nippon chemi
Contextual Info: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

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Abstract: nippon capacitors 2508051107Y0 dvbt transmitter 3A412 MRF377 MRF377R3 MRF377R5 J263
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

marking WB4

Abstract: NIPPON CHEMI nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

mrf373al

Abstract: Vj3640Y MRF373A
Contextual Info: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MRF373A

Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these