K 561 Search Results

Contextual Info: CERAMIC CHIP / HIGH VOLTAGE C0G DIELECTRIC CAPACITANCE VALUES AND THICKNESS TARGETS in. C,D C,D K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M C,D G,J,K,M D,F,G,J,K,M D,F,G,J,K,M D,F,G,J,K,M

Contextual Info: r 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 ALL RIGHTS RESERVED. D -1 1 . 99[. 4 7 2 ] C . 25 01 0 ] B -5.08[. 2 0 0 ] - 1 . 27 [. 0 5 0 ] 4 PLC / / / k + / k / / / k + i / k / / k 7. 21 [.284] / / k 1 . 27

2222 655 2222

Abstract: 2222 654 10109 2222 654 10229 2222 10229 2222 682 09338
Contextual Info: Miniature plate, class 2/63 V/100 V/500 V/1000 V Ceramic capacitors Product information Rated DC voltage UR 63 V 100 V 500 V 1000 V Dielectric K 14 000 K 2000 K 5000 K 2000 K 2000 3 K 5000 3) material Z5V Y5P 4) X5U Y5P 4) Y5P 4) X5U –55 °C to +150 °C

f650

Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S

dc-ac inverter SERVICE MANUAL

Abstract: LMU-TK12ASTR LMU-TK12AS wire diagram dc-ac inverter K 872 2594 SEESAW SWITCH 4139 sensor TK12 LMU-TK12ASTR-7
Contextual Info: SERVICE MANUAL LMU-TK12AS SS INDUSTRIAL MONITOR LMU-TK12AS(K) (SS) LMU-TK12ASTR (SS) LMU-TK12ASTR(K) (SS) PRODUCT CODE No. LMU-TK12AS/SS 1938 102 39 LMU-TK12AS(K)/SS 1938 102 86 LMU-TK12ASTR/SS 1938 102 40 LMU-TK12ASTR(K)/SS 1938 115 02 LMU-TK12ASTR(K)/UK

s8 223j

Abstract: s6 5n 822j MS75089 MS75089-23 MS75088-13 S75087
Contextual Info: OHMITE LITTLE HENRIES" Inductive Components K Series Manufacturing Company R. F. Molded Chokes 1 4 3 8 ! 188 -3 6 525-± 4 7 7- 156 - 0 1 0 - 3 . 9 6 2 a- 25 '0 K M 150M K M 220M K M 330M K M 470M KM 5 60 K 18130-1 18130-2 18130-3 18130-4 18130-5 KM 680K KM 820K

Contextual Info: POWER INDUCTORS POWER INDUCTORS CDRH127/LD M OUTLINE Thinner core diameter and thicker wire diameter enables CDRH127/LD to be lower D.C.R than CDRH127. K DIMENSIONS mm 8.0MAX. 5.0 7.6 12.0 12.3MAX. 12.3MAX. K SATURATION CURRENT K LAND PATTERNS(mm) 1000.0

Contextual Info: POWER INDUCTORS Pin Type RCR1616 M OUTLINE RCR1616 is ø16 Pin type power inductor is used for strong currents and is magnetically shielded. K DIMENSIONS(mm) 5.0 7.5 16.5MAX. ø0.8 ø16.5MAX. K CONSTRUCTION (4.7µH – 1.00mH) K SPECIFICATIONS Inductance(Within)

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

180M 290

Abstract: inductor 100mH Inductor 331k RCR1616-331K RCR1616 RCR1616-101K 284m
Contextual Info: POWER INDUCTORS Pin Type RCR1616 M OUTLINE RCR1616 is ø16 Pin type power inductor is used for strong currents and is magnetically shielded. K DIMENSIONS(mm) 5.0 7.5 16.5MAX. ø0.8 ø16.5MAX. K CONSTRUCTION (4.7µH – 1.00mH) K SPECIFICATIONS Parts No.

SL1016

Abstract: 330KB 4263B
Contextual Info: CHOKE COILS SL TYPE SL0406 Series FEATURES •Low Cost •Wide Range of Inductance •High Reliability ELECTRICAL PARAMETERS PRODUCT IDENTIFICATION SL 04 06 - 151 K - K Material Tolerance K:± 10%, M:±20% Inductance 150µH Outer Type T : UL or PVC Tube

EL115

Contextual Info: üIS íEl Representatives W I R E L E S S A ftC Europe Denmark Turkey United Kingdom G e v e k e T e k n ik A /S E R D A E le k tro n ik s A S R o s k ild e v e j 8 - 1 0 2 6 2 0 A lh e r ts lu n d T el: 4 5 4 3 6 8 M l 0 0 G a ra n ti K o z a E v leri A lis v e ris B lo k N o . 2 0

Contextual Info: CHOKE COILS TYPE I P a r t No. 184021ROM 184021R5M 18 4 0 2 2 R 2 M 184023R3M 184024R7M 184026R8M 1840210 0 K 18402 120K 18402150K 18 402180K 18402220K 18402270K 18402330K 18402390K 18402470K 1 8 402 560 K 18402680K 1 8 402 820 K 184021 OIK 18402121K 18402151K

Contextual Info: CERAMIC DISC CAPACITORS - Hi-K EIA RS198 CLASS 2, JIS C 6422 TYPE H FEATURES  Large capacitance in small size  Non linear temperature coefficient of capacitance Part No. Designation H (1) Example B (2) 1H (3) 471 (4) K (5) - K (6) 5 (7) 5 (8) 5 (9)

scrambler v.35 algorithm

Abstract: scrambler satellite v.35 scrambler v.35 diagram CNT-240 STEL-2070A bpsk modulator low frequency bpsk modulator ic CNT2423-0 CNT160 convolutional
Contextual Info: STEL-2070A Data Sheet STEL-2070A Dual Constraint Length K=7,9 Convolutional Encoder Viterbi Decoder R FEATURES • Dual Constraint Length: 7 or 9 ■ Coding Gain: 5.2 dB (@ 10-5 BER, K = 7) ■ Rate 1/2 6.0 dB (@ 10-5 BER, K = 9) ■ Three Bit Soft Decision Inputs in Signed

Contextual Info: CERAMIC DISC CAPACITORS - Hi-K EIA RS198 CLASS 2, JIS C 6422 TYPE H FEATURES z Large capacitance in small size z Non linear temperature coefficient of capacitance Part No. Designation H (1) Example B (2) 1H (3) 471 (4) K (5) - K (6) 5 (7) 5 (8) 5 (9) B (10)

scans-048

Abstract: KU-68 DSAGER00067 thermistoren
Contextual Info: TNK-Form A ^ r f ä TNM TN K -k ¡1 i2 10 6,5im.6ßk 15 11 5 •ifl7k.15ük Bild 4 Abmessungen der Ther­ mistoren der TNM - und TNK-Reihe TN K~ Form Tabelle 1 Thermistoren der TNM -Reihe Auszug aus TG L 14281 Bl. 04) TN M -Typ entsprechende Kaltwiderstände bei

TGL 29331

Abstract: Kombinat VEB Elektronische Bauelemente TGL 31428 bauelemente Kombinat bauelemente DDR TGL-31428 21-1 TGL 24815 TGL 24687 TGL 24815 veb taschenbuch
Contextual Info: Kontakt­ bauelemente Kombinat VEB Elektronische Bauelemente K O N T A K T B A UELEM ENTE In h alt S te c k v e rb in d e r, fla che B a u fo rm Seite 6 H F -R u n d ste ckve rb in d e r 61 N F -R u n d ste ckve rb in d e r 101 L ic h tle ite rs te c k v e rb in d e r

509a-5 harris

Abstract: HA-2820 HI-508A 508A HI-200 HI-201 HI-509A IN4002 IMO5 1001 harris
Contextual Info: BURN-IN CIRCUITS HI-201 H I-200 TO-100 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A f A-j = 5 0 K H Z DAS H NOTES: A q = 100KHZ A 2 = 25KHZ

111UK471

Abstract: 111XK102 111SK121
Contextual Info: AMERICAN TECHNICAL 3ME D G773MGÌ DGG0731 2 ap HIGH K DIELECTRIC SERIES C ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications * R .015 sq. s p ^ p K 4 0 ,0 0 0 i ^ f M S C ^ : h ig h k ;J: Æ-i f ! D IE L E C T R IC v

M 400 HA-H

Abstract: ica 700 Y
Contextual Info: A dvanced W .A PO W ER * T e c h n o lo g y a m 0257=101 0001722 ots • K B P 2005G th ru K B P 210G 2.0 A GLASS PASSIVj BRIDGE REC VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes SILICON "KEF .143 3.65 .13? (3.35) .580(14.75) ■043(1.10) .561 (14.25)

MPC16S

Abstract: H11-506A-5 AD7512 equivalent AM-452-2 HA2-2055-5 am-462-2 DG509 SHM1C1 am452-2 H12-200-2
Contextual Info: BURN-IN CIRCUITS HI-201 H I-2 0 0 TO-100 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A DASH f NOTES: A q = 100KHZ A-j = 5 0 K H Z A 2 = 25KHZ

H12-200

Abstract: MPC16S HI-200-5 Burr Brown 3550K HA2-2065-5 RC1556 HA2-2055 AM715 AM-462-2 H11-506A-5
Contextual Info: BURN-IN CIRCUITS HI-201 H I-2 0 0 TO-100 T a = +125°C R ! = 1 0 K ÌÌ D i D 2 D 3 = IN 4 0 0 2 F re q : = l O O K H z N O TES: T a = +125°C D 1 0 2 = IN 4 0 0 2 F re q : = l O O K H z HI -506/507/506A/507A f A-j = 5 0 K H Z DAS H NOTES: A q = 100KHZ A 2 = 25KHZ

Contextual Info: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width